公开(公告)号：US20190051519A1

公开(公告)日：2019-02-14

申请号：US16058032

申请日：2018-08-08

Applicant: Tokyo Electron Limited

Inventor： Kento Tsukano ,  Gentaro Goshi ,  Takuro Masuzumi ,  Hiromi Kiyose ,  Shogo Fukui

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  B08B3/04 ,  B08B3/08 ,  B08B3/10

Abstract: In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

公开(公告)号：US11515142B2

公开(公告)日：2022-11-29

申请号：US17014484

申请日：2020-09-08

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Pohan Huang

IPC: H01L21/02 ,  B08B7/00 ,  F26B5/00

Abstract: There is provided a method of cleaning a substrate processing apparatus in which a drying process of drying a substrate whose surface is wet with a liquid is performed by bring the substrate into contact with a supercritical fluid, the method including: diffusing a first cleaning fluid in an interior of the substrate processing apparatus, the first cleaning fluid being obtained by mixing the supercritical fluid with a solvent containing polar molecules and having a lower boiling point than a boiling point of the liquid; and discharging the first cleaning fluid from the interior of the substrate processing apparatus, that occurs after the diffusing the first cleaning fluid.

公开(公告)号：US11133176B2

公开(公告)日：2021-09-28

申请号：US16058032

申请日：2018-08-08

Applicant: Tokyo Electron Limited

Inventor： Kento Tsukano ,  Gentaro Goshi ,  Takuro Masuzumi ,  Hiromi Kiyose ,  Shogo Fukui

IPC: H01L21/02 ,  H01L21/67 ,  B08B3/10 ,  B08B3/04 ,  B08B3/08 ,  H01L21/687 ,  H01L21/677

Abstract: In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

公开(公告)号：US20180200764A1

公开(公告)日：2018-07-19

申请号：US15871265

申请日：2018-01-15

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Noritaka Uchida ,  Takanori Obaru ,  Hidetaka Shinohara ,  Shuuichi Nishikido ,  Tomohito Ura ,  Yuya Motoyama

IPC: B08B17/02 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  B08B1/00 ,  B08B1/02 ,  B08B3/04 ,  B08B5/02 ,  B08B7/04

CPC classification number: B08B17/025 ,  B08B1/002 ,  B08B1/02 ,  B08B3/041 ,  B08B3/08 ,  B08B5/023 ,  B08B7/04 ,  F26B3/04 ,  F26B5/08 ,  F26B21/14 ,  H01L21/02043 ,  H01L21/02052 ,  H01L21/02096 ,  H01L21/67017 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67253 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68785 ,  H01L21/68792

Abstract: Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a processing liquid supply device 71.

公开(公告)号：US12300518B2

公开(公告)日：2025-05-13

申请号：US17808160

申请日：2022-06-22

Applicant: Tokyo Electron Limited

Inventor： Kazuki Kosai ,  Hideaki Udou ,  Seiya Fujimoto ,  Yudai Takanaga ,  Takahito Nakashoya ,  Shogo Fukui ,  Atsushi Anamoto ,  So Osada

IPC: H01L21/67 ,  B08B13/00

Abstract: An apparatus includes: a tank storing a processing liquid; a circulation line; a branch line; a processing part for supplying the processing liquid to a substrate at the branch line; a discharge part for reducing a storage amount of the processing liquid; a supply part for supplying a new processing liquid to the tank; and a controller including: a first determination part for determining whether the storage amount is less than a lower limit value; a first replenishment controller for replenishing the processing liquid to the tank when the storage amount is less than the lower limit value; a calculation part for calculating a replenishment amount of the processing liquid; and a second replenishment controller for reducing the storage amount and replenishing the processing liquid to the tank when a calculation value of the replenishment amount is less than a set value.

公开(公告)号：US11626298B2

公开(公告)日：2023-04-11

申请号：US16603044

申请日：2018-03-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke Takamatsu ,  Yasuhiro Takaki ,  Shinichi Umeno ,  Shogo Fukui

IPC: H01L21/67 ,  B08B3/08 ,  B01D19/00 ,  B01D19/02 ,  B01D29/52 ,  B05C5/02 ,  B05C11/10 ,  H01L21/687

Abstract: A liquid supply device includes: a storage tank configured to store a processing liquid including a first processing liquid (sulfuric acid) and a second processing liquid (hydrogen peroxide solution); a circulation path having a first pipeline through which the processing liquid passes in a horizontal direction, and configured to circulate the processing liquid stored in the storage tank; a branch path configured to supply the processing liquid to a processing unit; and a branching part having an opening for allowing the processing liquid to flow out from the first pipeline to the branch path, wherein the opening is formed in the branching part and formed below a periphery of the first pipeline when the first pipeline is viewed in section.

公开(公告)号：US20160336170A1

公开(公告)日：2016-11-17

申请号：US15149734

申请日：2016-05-09

Applicant: Tokyo Electron Limited

Inventor： Seiki Ishida ,  Shogo Fukui ,  Hidetaka Shinohara

IPC: H01L21/02 ,  H01L21/687 ,  B08B5/00 ,  B08B3/08 ,  B08B3/10 ,  H01L21/67 ,  B08B3/02

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a first nozzle that ejects droplets of a chemical liquid toward a front surface of a substrate, the droplets being formed by mixing a gas supplied by a gas supply mechanism and a heated chemical liquid supplied by a heated chemical liquid supply mechanism with each other, and a second nozzle that ejects the heated deionized water supplied by the heated deionized water supply mechanism toward the rear surface of the substrate. The first nozzle supplies the droplets to the front surface of the substrate heated from the rear surface thereof by the heated deionized water supplied from the second nozzle.

Abstract translation: 公开了一种基板处理装置。 基板处理装置包括：第一喷嘴，其朝向基板的前表面喷射化学液体的液滴;液滴通过混合由气体供给机构供给的气体和被加热的药液供给机构供给的加热的化学液体而形成 以及第二喷嘴，其将由加热的去离子水供给机构供应的经加热的去离子水喷射到基板的后表面。 第一喷嘴通过从第二喷嘴供应的加热的去离子水将液滴从其后表面加热到衬底的前表面。

公开(公告)号：US20250167011A1

公开(公告)日：2025-05-22

申请号：US19032823

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Masataka Gosho ,  Satoshi Okamura ,  Tomohito Ura

IPC: H01L21/67 ,  H01L21/683

Abstract: A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

公开(公告)号：US12237177B2

公开(公告)日：2025-02-25

申请号：US17649933

申请日：2022-02-04

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Masataka Gosho ,  Satoshi Okamura ,  Tomohito Ura

IPC: H01L21/67 ,  H01L21/683

Abstract: A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

公开(公告)号：US11715648B2

公开(公告)日：2023-08-01

申请号：US16936977

申请日：2020-07-23

Applicant: Tokyo Electron Limited

Inventor： Katsuya Nakata ,  Shogo Fukui

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67034 ,  H01L21/02101 ,  H01L21/67276 ,  H01L21/68742

Abstract: A substrate processing apparatus performs a drying process for drying a substrate with a liquid film formed on a pattern formation surface thereof, using a processing fluid in a supercritical state. The substrate processing apparatus includes a processing container, a holder, and a processing liquid supply. The processing container accommodates the substrate. The holder holds the substrate inside the processing container. The processing liquid supply supplies a processing fluid into the processing container. Further, the holder includes a base, a plurality of support members, and a lifting mechanism. The base is disposed below the substrate. The plurality of support members are provided on the base, and support the substrate from below. The lifting mechanism moves the plurality of support members up and down.