公开(公告)号：US20180200764A1

公开(公告)日：2018-07-19

申请号：US15871265

申请日：2018-01-15

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Noritaka Uchida ,  Takanori Obaru ,  Hidetaka Shinohara ,  Shuuichi Nishikido ,  Tomohito Ura ,  Yuya Motoyama

IPC: B08B17/02 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  B08B1/00 ,  B08B1/02 ,  B08B3/04 ,  B08B5/02 ,  B08B7/04

CPC classification number: B08B17/025 ,  B08B1/002 ,  B08B1/02 ,  B08B3/041 ,  B08B3/08 ,  B08B5/023 ,  B08B7/04 ,  F26B3/04 ,  F26B5/08 ,  F26B21/14 ,  H01L21/02043 ,  H01L21/02052 ,  H01L21/02096 ,  H01L21/67017 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67253 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68785 ,  H01L21/68792

Abstract: Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a processing liquid supply device 71.

公开(公告)号：US11084072B2

公开(公告)日：2021-08-10

申请号：US15871265

申请日：2018-01-15

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Noritaka Uchida ,  Takanori Obaru ,  Hidetaka Shinohara ,  Shuuichi Nishikido ,  Tomohito Ura ,  Yuya Motoyama

IPC: B08B17/02 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B1/00 ,  B08B1/02 ,  B08B3/04 ,  B08B5/02 ,  B08B7/04 ,  F26B21/14 ,  F26B3/04 ,  F26B5/08 ,  B08B3/08

Abstract: Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a first processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a second processing liquid supply device 71.

公开(公告)号：US10553421B2

公开(公告)日：2020-02-04

申请号：US15149734

申请日：2016-05-09

Applicant: Tokyo Electron Limited

Inventor： Seiki Ishida ,  Shogo Fukui ,  Hidetaka Shinohara

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a first nozzle that ejects droplets of a chemical liquid toward a front surface of a substrate, the droplets being formed by mixing a gas supplied by a gas supply mechanism and a heated chemical liquid supplied by a heated chemical liquid supply mechanism with each other, and a second nozzle that ejects the heated deionized water supplied by the heated deionized water supply mechanism toward the rear surface of the substrate. The first nozzle supplies the droplets to the front surface of the substrate heated from the rear surface thereof by the heated deionized water supplied from the second nozzle.

公开(公告)号：USD843118S1

公开(公告)日：2019-03-19

申请号：US29607555

申请日：2017-06-14

Applicant: Tokyo Electron Limited

Designer： Hidetaka Shinohara ,  Osamu Miyahara ,  Kento Kurusu

公开(公告)号：US20160336170A1

公开(公告)日：2016-11-17

申请号：US15149734

申请日：2016-05-09

Applicant: Tokyo Electron Limited

Inventor： Seiki Ishida ,  Shogo Fukui ,  Hidetaka Shinohara

IPC: H01L21/02 ,  H01L21/687 ,  B08B5/00 ,  B08B3/08 ,  B08B3/10 ,  H01L21/67 ,  B08B3/02

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a first nozzle that ejects droplets of a chemical liquid toward a front surface of a substrate, the droplets being formed by mixing a gas supplied by a gas supply mechanism and a heated chemical liquid supplied by a heated chemical liquid supply mechanism with each other, and a second nozzle that ejects the heated deionized water supplied by the heated deionized water supply mechanism toward the rear surface of the substrate. The first nozzle supplies the droplets to the front surface of the substrate heated from the rear surface thereof by the heated deionized water supplied from the second nozzle.

Abstract translation: 公开了一种基板处理装置。 基板处理装置包括：第一喷嘴，其朝向基板的前表面喷射化学液体的液滴;液滴通过混合由气体供给机构供给的气体和被加热的药液供给机构供给的加热的化学液体而形成 以及第二喷嘴，其将由加热的去离子水供给机构供应的经加热的去离子水喷射到基板的后表面。 第一喷嘴通过从第二喷嘴供应的加热的去离子水将液滴从其后表面加热到衬底的前表面。