公开(公告)号：US20170182514A1

公开(公告)日：2017-06-29

申请号：US15382901

申请日：2016-12-19

Applicant: Tokyo Electron Limited

Inventor： Takeshi KUMAGAI ,  Yutaka TAKAHASHI ,  Chihhsiang HSIAO ,  Atsushi ENDO

IPC: B05D1/00

CPC classification number: C23C16/04 ,  C23C16/18 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32431 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/0334

Abstract: A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.

公开(公告)号：US20130109196A1

公开(公告)日：2013-05-02

申请号：US13661120

申请日：2012-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi ENDO ,  Satoshi MIZUNAGA ,  Takehiro OTSUKA

IPC: C23C16/46 ,  H01L21/31

CPC classification number: C23C16/4404 ,  C23C16/4405 ,  H01L21/02115 ,  H01L21/02271

Abstract: A method of operating a film forming apparatus includes forming a carbon film on each of surfaces of a plurality of objects held by a holding unit in a processing container and performing a cleaning process with a cleaning gas to remove an unnecessary carbon film adhered on a inside of the processing container, wherein the method further includes, before the forming of the carbon film, forming, on a surface of a member contacting a processing space in the processing container, a tolerant pre-coating film which has a tolerance to the cleaning gas and improves adhesion of the carbon film to the surface of the member. Accordingly, the adhesion of the carbon film is improved, and further, the tolerant pre-coating film remains even when the cleaning process of removing the unnecessary carbon film is performed.

Abstract translation: 一种操作成膜设备的方法包括在由处理容器中的保持单元保持的多个物体的每个表面上形成碳膜，并用清洁气体进行清洁处理以除去附着在内部的不必要的碳膜 所述方法还包括在形成所述碳膜之前，在与所述处理容器中的处理空间接触的构件的表面上形成对所述清洁气体具有耐受性的耐受预涂膜 并提高碳膜对构件表面的粘附性。 因此，提高了碳膜的粘合性，进一步地，即使进行去除不需要的碳膜的清洗工序，耐磨预涂膜仍然残留。

公开(公告)号：US20210376123A1

公开(公告)日：2021-12-02

申请号：US17329178

申请日：2021-05-25

Applicant: Tokyo Electron Limited

Inventor： Shimpei YAMAGUCHI ,  Atsushi TSUBOI ,  Atsushi ENDO ,  Masanobu IGETA ,  Masaru SUGIMOTO ,  Luis FERNANDEZ

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02

Abstract: A method including depositing a dielectric film on a substrate including stacked structures with recessed portions formed on side surfaces of each of the stacked structures, wherein the dielectric film is deposited so that the stacked structures are covered at a thickness which is equal to or less than half a width of the recessed portions; filling a trench or trenches that are located between the stacked structures with a sacrificial film; etching the sacrificial film along the stacked structures; etching the dielectric film so that the dielectric film is etched more than the sacrificial film; removing the sacrificial film; after the removing of the sacrificial film, depositing a dielectric film to a thickness equal to or less than half the width of the recessed portions; and etching the deposited dielectric film, on a condition that the deposited dielectric film remains in the recessed portions.

公开(公告)号：US20210375684A1

公开(公告)日：2021-12-02

申请号：US17329153

申请日：2021-05-25

Applicant: Tokyo Electron Limited

Inventor： Shimpei YAMAGUCHI ,  Atsushi TSUBOI ,  Atsushi ENDO ,  Masaru SUGIMOTO ,  Hiroshi YANO ,  Yasushi KODASHIMA ,  Masanobu IGETA

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L29/66

Abstract: A method for manufacturing a semiconductor device includes forming a support on a side surface of a stack that extends from a substrate. The stack includes a second sacrificial film, plural first sacrificial films and plural silicon (Si)-containing films, wherein one first sacrificial film of the plural sacrificial films is stacked upon the second sacrificial film and the plural sacrificial films and the plural Si-containing films are alternately stacked upon one another, and at least a side of the second sacrificial film is not covered by the support, the one first sacrificial film and the substrate. The method further includes removing the second sacrificial film from the stack to form a space between the substrate and the one first sacrificial film and adjacent to the support, and filling the space with a dielectric film.

公开(公告)号：US20170256450A1

公开(公告)日：2017-09-07

申请号：US15450595

申请日：2017-03-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoichiro CHIBA ,  Daisuke SUZUKI ,  Atsushi ENDO

IPC: H01L21/768 ,  C23C16/06 ,  C23C16/02 ,  C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/04 ,  C23C16/24 ,  C23C16/46

CPC classification number: H01L21/76879 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/06 ,  C23C16/24 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76876

Abstract: There is provided a method of filling a recess with a germanium-based film composed of germanium or silicon germanium in a substrate to be processed on which an insulating film having the recess formed therein is formed, the method including: forming a silicon film on a surface of the insulating film at a thickness as not to completely fill the recess; subsequently, etching the silicon film such that the silicon film remains only in a bottom portion of the recess; and subsequently, selectively growing the germanium-based film composed of germanium or silicon germanium on the silicon film remaining in the bottom portion of the recess and selectively filling the recess with the germanium-based film.

公开(公告)号：US20150270126A1

公开(公告)日：2015-09-24

申请号：US14730530

申请日：2015-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu KAKIMOTO ,  Atsushi ENDO ,  Takahiro MIYAHARA ,  Shigeru NAKAJIMA ,  Satoshi TAKAGI ,  Kazumasa IGARASHI

IPC: H01L21/02

CPC classification number: C23C16/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/67109

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract translation: 一种薄膜形成方法，其在被配置为真空可消耗的处理容器中的待处理物体的表面上形成种子膜和含杂质的硅膜，所述薄膜形成方法包括：执行形成所述第一步骤的第一步骤， 通过将包含氨基硅烷类气体的种子膜原料气体供给到处理容器中，在物体表面上由硅，碳和氮化合物形成的种子膜; 以及通过向所述处理容器中供给硅烷系气体和含杂质气体，进行在种子膜上形成非晶状态的含杂质硅膜的第二工序。

公开(公告)号：US20250066916A1

公开(公告)日：2025-02-27

申请号：US18944529

申请日：2024-11-12

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA ,  Yoichiro CHIBA ,  Atsushi ENDO

IPC: C23C16/455 ,  C23C16/52

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a first pair of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container and disposed symmetrically with respect to a straight line extending from a center of the exhaust slit to a portion of the side wall positioned opposite to the exhaust slit via a center of the processing container; a second pair of gas nozzle disposed symmetrically with respect to the straight line; at least one memory storing executable instructions; and at least one processor configured to execute the executable instructions to: control the first pair of gas nozzles and the second pair of gas nozzles to eject a same processing gas into the processing container.

公开(公告)号：US20220384184A1

公开(公告)日：2022-12-01

申请号：US17804170

申请日：2022-05-26

Applicant: Tokyo Electron Limited

Inventor： Yutaka MOTOYAMA ,  Atsushi ENDO

IPC: H01L21/02 ,  C23C16/458

Abstract: A method for manufacturing a semiconductor device includes supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess, supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess, supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess, and additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas.

公开(公告)号：US20190237326A1

公开(公告)日：2019-08-01

申请号：US16257790

申请日：2019-01-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KOMIYA ,  Hirokazu UEDA ,  Atsushi ENDO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/02274 ,  H01J37/32201 ,  H01L21/02112 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/68714

Abstract: There is provided a selective film forming method, comprising a first step of preparing a work piece having a plurality of recesses; a second step of forming a boron-based film having a first predetermined film thickness in a portion of the work piece other than the recesses by plasma CVD; and a third step of etching a side surface of the formed boron-based film having the first predetermined film thickness, wherein the boron-based film is formed in the portion of the work piece other than the recesses in a self-aligned and selective manner.

公开(公告)号：US20250167009A1

公开(公告)日：2025-05-22

申请号：US19034742

申请日：2025-01-23

Applicant: Tokyo Electron Limited

Inventor： Kazuya TAKAHASHI ,  Kuniyasu SAKASHITA ,  Atsushi ENDO ,  Junya KOJIMA

IPC: H01L21/67 ,  C23C16/455

Abstract: A substrate processing apparatus includes: a processing container that accommodates a plurality of substrates arranged in multiple tiers; a processing gas supply pipe that extends along an arrangement direction of the plurality of substrates and supplies a processing gas into the processing container; and a pair of inert gas supply pipes that is provided at positions sandwiching the processing gas supply pipe therebetween along a circumferential direction of the plurality of substrates while extending along the arrangement direction, and supply an inert gas into the processing container. The pair of inert gas supply pipes are configured to inject the inert gas toward an inner surface of a sidewall of the processing container, so that the inner surface forms a flow of the inert gas in the circumferential direction of the plurality of substrates.