公开(公告)号：US20200111645A1

公开(公告)日：2020-04-09

申请号：US16708856

申请日：2019-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru SUGIMOTO ,  Kunihiko HINATA ,  Noriyuki KOBAYASHI ,  Chishio KOSHIMIZU ,  Ryuji OHTANI ,  Kazuo KIBI ,  Masashi SAITO ,  Naoki MATSUMOTO ,  Yoshinobu OHYA ,  Manabu IWATA ,  Daisuke YANO ,  Yohei YAMAZAWA ,  Hidetoshi HANAOKA ,  Toshihiro HAYAMI ,  Hiroki YAMAZAKI ,  Manabu SATO

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

公开(公告)号：US20150000843A1

公开(公告)日：2015-01-01

申请号：US14489125

申请日：2014-09-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Noriyuki KOBAYASHI ,  Shigeru YONEDA ,  Kenichi HANAWA ,  Shigeru TAHARA ,  Masaru SUGIMOTO

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32174 ,  H01J2237/334 ,  H01J2237/3346 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76834

Abstract: A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.

Abstract translation: 等离子体蚀刻装置包括第一RF电源单元，被配置为将第一RF电力施加到等离子体产生的第一电极或第二电极，所述第一电极或第二电极彼此相对设置在被构造为被真空排出的处理容器中;第二RF电源 被配置为向第二电极施加用于离子吸引的第二RF功率的单元，以及被配置为控制第二RF电源单元的控制器。 第二RF电源单元包括第二RF电源和第二匹配单元。 控制器被预置为控制第二RF电源单元以在第一功率和第二功率之间的预定周期中执行功率调制的功率调制模式操作，同时控制第二匹配单元以与第一功率和第二功率同步地切换匹配操作 功率调制

公开(公告)号：US20170032936A1

公开(公告)日：2017-02-02

申请号：US15290846

申请日：2016-10-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru SUGIMOTO ,  Kunihiko HINATA ,  Noriyuki KOBAYASHI ,  Chishio KOSHIMIZU ,  Ryuji OHTANI ,  Kazuo KIBI ,  Masashi SAITO ,  Naoki MATSUMOTO ,  Manabu IWATA ,  Daisuke YANO ,  Yohei YAMAZAWA ,  Hidetoshi HANAOKA ,  Toshihiro HAYAMI ,  Hiroki YAMAZAKI ,  Manabu SATO

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3065

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US20210376123A1

公开(公告)日：2021-12-02

申请号：US17329178

申请日：2021-05-25

Applicant: Tokyo Electron Limited

Inventor： Shimpei YAMAGUCHI ,  Atsushi TSUBOI ,  Atsushi ENDO ,  Masanobu IGETA ,  Masaru SUGIMOTO ,  Luis FERNANDEZ

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02

Abstract: A method including depositing a dielectric film on a substrate including stacked structures with recessed portions formed on side surfaces of each of the stacked structures, wherein the dielectric film is deposited so that the stacked structures are covered at a thickness which is equal to or less than half a width of the recessed portions; filling a trench or trenches that are located between the stacked structures with a sacrificial film; etching the sacrificial film along the stacked structures; etching the dielectric film so that the dielectric film is etched more than the sacrificial film; removing the sacrificial film; after the removing of the sacrificial film, depositing a dielectric film to a thickness equal to or less than half the width of the recessed portions; and etching the deposited dielectric film, on a condition that the deposited dielectric film remains in the recessed portions.

公开(公告)号：US20210375684A1

公开(公告)日：2021-12-02

申请号：US17329153

申请日：2021-05-25

Applicant: Tokyo Electron Limited

Inventor： Shimpei YAMAGUCHI ,  Atsushi TSUBOI ,  Atsushi ENDO ,  Masaru SUGIMOTO ,  Hiroshi YANO ,  Yasushi KODASHIMA ,  Masanobu IGETA

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L29/66

Abstract: A method for manufacturing a semiconductor device includes forming a support on a side surface of a stack that extends from a substrate. The stack includes a second sacrificial film, plural first sacrificial films and plural silicon (Si)-containing films, wherein one first sacrificial film of the plural sacrificial films is stacked upon the second sacrificial film and the plural sacrificial films and the plural Si-containing films are alternately stacked upon one another, and at least a side of the second sacrificial film is not covered by the support, the one first sacrificial film and the substrate. The method further includes removing the second sacrificial film from the stack to form a space between the substrate and the one first sacrificial film and adjacent to the support, and filling the space with a dielectric film.

公开(公告)号：US20210082669A1

公开(公告)日：2021-03-18

申请号：US17105118

申请日：2020-11-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru SUGIMOTO ,  Kunihiko HINATA ,  Noriyuki KOBAYASHI ,  Chishio KOSHIMIZU ,  Ryuji OHTANI ,  Kazuo KIBI ,  Masashi SAITO ,  Naoki MATSUMOTO ,  Yoshinobu OHYA ,  Manabu IWATA ,  Daisuke YANO ,  Yohei YAMAZAWA ,  Hidetoshi HANAOKA ,  Toshihiro HAYAMI ,  Hiroki YAMAZAKI ,  Manabu SATO

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.

公开(公告)号：US20160379841A1

公开(公告)日：2016-12-29

申请号：US15184049

申请日：2016-06-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira HIDAKA ,  Soichiro KIMURA ,  Masaru SUGIMOTO

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76897 ,  H01L2221/1063

Abstract: Disclosed is a method for selectively etching a first region made of silicon oxide to a second region made of silicon nitride. The method includes: performing a first sequence once or more to etch the first region; and performing a second sequence once or more to further etch the first region. The first sequence includes: a first step of generating plasma of a processing gas containing a fluorocarbon to form a fluorocarbon-containing deposit on a workpiece; and a second step of etching the first region by radicals of the fluorocarbon. The second sequence includes: a third step of generating plasma of a processing gas containing a fluorocarbon gas to form a fluorocarbon-containing deposit on a workpiece; and a fourth step of generating plasma of a processing gas containing oxygen gas and an inert gas in the processing container.

Abstract translation: 公开了一种用于将由氧化硅制成的第一区域选择性蚀刻到由氮化硅制成的第二区域的方法。 该方法包括：执行一次或多次第一序列以蚀刻第一区域; 以及执行一次或多次的第二序列以进一步蚀刻所述第一区域。 第一序列包括：产生含有碳氟化合物的处理气体的等离子体以在工件上形成含氟烃沉积物的第一步骤; 以及通过氟碳化合物的自由基蚀刻第一区域的第二步骤。 第二序列包括：产生含有碳氟化合物气体的处理气体的等离子体以在工件上形成含氟烃沉积物的第三步骤; 以及在处理容器中产生含有氧气和惰性气体的处理气体的等离子体的第四步骤。

公开(公告)号：US20140124139A1

公开(公告)日：2014-05-08

申请号：US14070190

申请日：2013-11-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru SUGIMOTO ,  Kunihiko HINATA ,  Noriyuki KOBAYASHI ,  Chishio KOSHIMIZU ,  Ryuji OHTANI ,  Kazuo KIBI ,  Masashi SAITO ,  Naoki MATSUMOTO ,  Yoshinobu OHYA ,  Manabu IWATA ,  Daisuke YANO ,  Yohei YAMAZAWA ,  Hidetoshi HANAOKA ,  Toshihiro HAYAMI ,  Hiroki YAMAZAKI ,  Manabu SATO

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/32018 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/2001 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/67069 ,  Y10S156/915

Abstract: A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.

Abstract translation: 一种等离子体处理装置，包括在处理容器内设置在上侧和下侧并彼此相对的第一和第二电极，连接到第一电极的第一RF电力施加单元和DC电源，以及第二和第三射频功率 应用单元都连接到第二电极。 导电构件设置在处理容器内并接地以通过等离子体释放由直流电源施加的直流电压引起的电流。 导电构件由第二电极周围的第一屏蔽部分支撑，并且在第二电极的安装面和用于导电构件的排气板之间的位置处侧向突出以暴露于等离子体。 导电构件通过第一屏蔽部分的导电内部主体接地。