公开(公告)号：US11437223B2

公开(公告)日：2022-09-06

申请号：US16905470

申请日：2020-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu Sasaki ,  Tsuguto Sugawara ,  Shin Yamaguchi ,  Hajime Tamura

IPC: H01J37/32 ,  H01L21/683

Abstract: A stage includes an electrostatic chuck that supports a substrate and an edge ring; and a base that supports the electrostatic chuck. The electrostatic chuck includes a first region having a first upper surface and supports the substrate placed on the first upper surface; a second region having a second upper surface, provided integrally around the first region, and supports the edge ring placed on the second upper surface; a first electrode provided in the first region to apply a DC voltage; a second electrode provided in the second region to apply a DC voltage, and a third electrode to apply a bias power.

公开(公告)号：US20190326102A1

公开(公告)日：2019-10-24

申请号：US16390113

申请日：2019-04-22

Applicant: Tokyo Electron Limited

Inventor： Akiyoshi Mitsumori ,  Shin Yamaguchi

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: A temperature control method includes cooling an upper electrode and increasing a temperature of the upper electrode. A path having an inlet and an outlet is formed within the upper electrode. The upper electrode constitutes an evaporator. A compressor, a condenser and an expansion valve are connected in sequence between the outlet and the inlet of the path. A flow dividing valve is connected between an output of the compressor and the inlet to bypass the condenser and the expansion valve. In the cooling of the upper electrode, a coolant is supplied into the path via the compressor, the condenser and the expansion valve. In the increasing of the temperature of the upper electrode, the flow dividing valve is opened and the upper electrode is heated.

公开(公告)号：US20190027345A1

公开(公告)日：2019-01-24

申请号：US16038356

申请日：2018-07-18

Applicant: Tokyo Electron Limited

Inventor： Akira Ishikawa ,  Atsushi Matsuura ,  Akiyoshi Mitsumori ,  Shin Yamaguchi

IPC: H01J37/32 ,  H01L21/683

Abstract: A processing apparatus includes a chamber main body; a stage having therein a first passage for coolant and a space communicating with the first passage; a first pipeline having a first end portion inserted into the space to be connected to the first passage and a second end portion connected to a coolant supply mechanism; and a first sealing member provided at a gap between a wall surface confining the space and the first end portion. A second passage having one end and the other end is formed within the stage. The one end of the second passage is connected to the gap. The first sealing member is contacted with the wall surface at a side of the first passage with respect to the second passage. The processing apparatus comprises a second pipeline connected to the other end thereof; and a detecting device connected to the second pipeline.

公开(公告)号：US20180218886A1

公开(公告)日：2018-08-02

申请号：US15885933

申请日：2018-02-01

Applicant: Tokyo Electron Limited

Inventor： Shin Yamaguchi ,  Akiyoshi Mitsumori ,  Takehiko Arita ,  Koichi Murakami

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833

Abstract: A cooling table includes a first portion, a second portion, a first path, a second path and a third path. An electrostatic chuck is provided on the first portion, and the first portion is provided on the second portion. The first path is provided within the first portion, and the second path is provided within the second portion. The third path is connected to the first path and the second path. A chiller unit is connected to the first path and the second path. The first path is extended within the first portion along the electrostatic chuck, and the second path is extended within the second portion along the electrostatic chuck. A coolant outputted from the chiller unit passes through the first path, the third path and the second path in sequence, and then is inputted to the chiller unit.

公开(公告)号：US20220384155A1

公开(公告)日：2022-12-01

申请号：US17883264

申请日：2022-08-08

Applicant: Tokyo Electron Limited

Inventor： Yasuharu SASAKI ,  Tsuguto Sugawara ,  Shin Yamaguchi ,  Hajime Tamura

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

公开(公告)号：US11476095B2

公开(公告)日：2022-10-18

申请号：US17027101

申请日：2020-09-21

Applicant: Tokyo Electron Limited

Inventor： Shin Yamaguchi ,  Akiyoshi Mitsumori

IPC: H01J37/32 ,  H02N13/00 ,  C23C16/458 ,  H01L21/683 ,  H01L21/687 ,  H01L21/67

Abstract: An electrostatic chuck of an embodiment includes a base, a dielectric layer, and a chuck main body. The dielectric layer is provided on the base, and is fixed to the base. The chuck main body is mounted on the dielectric layer. The chuck main body has a ceramic main body, a first electrode, a second electrode, and a third electrode. The ceramic main body has a substrate mounting region. The first electrode is provided in the substrate mounting region. The second electrode and the third electrode form a bipolar electrode. The second electrode and the third electrode are provided in the ceramic main body, and are provided between the first electrode and the dielectric layer.

公开(公告)号：US11060770B2

公开(公告)日：2021-07-13

申请号：US16273354

申请日：2019-02-12

Applicant: Tokyo Electron Limited

Inventor： Shin Yamaguchi ,  Akiyoshi Mitsumori

IPC: F28D5/00 ,  F25B39/02 ,  H01L21/67 ,  F25B41/20 ,  H01L21/683 ,  F25B1/00

Abstract: A cooling system configured to circulate a coolant under a placing surface of a placing table includes a heat exchange unit within the placing table and configured to perform a heat exchange by the coolant via the placing surface; a chiller unit connected to the heat exchange unit. The heat exchange unit comprises a reservoir chamber configured to store the coolant; and an evaporation chamber configured to evaporate the coolant stored in the reservoir chamber. The reservoir chamber is connected to the chiller unit and communicates with the evaporation chamber. The evaporation chamber is connected to the chiller unit, extended along the placing surface and includes discharge holes. The discharge holes are arranged such that the coolant is discharged toward a heat transfer wall as a placing surface-side inner wall of the evaporation chamber. The discharge holes are dispersed within the placing surface.

公开(公告)号：US20190249911A1

公开(公告)日：2019-08-15

申请号：US16273354

申请日：2019-02-12

Applicant: Tokyo Electron Limited

Inventor： Shin Yamaguchi ,  Akiyoshi Mitsumori

IPC: F25B39/02 ,  F25B41/04 ,  F28D5/00

CPC classification number: F25B39/028 ,  F25B1/00 ,  F25B41/04 ,  F28D5/00 ,  H01L21/6833

Abstract: A cooling system configured to circulate a coolant under a placing surface of a placing table includes a heat exchange unit within the placing table and configured to perform a heat exchange by the coolant via the placing surface; a chiller unit connected to the heat exchange unit. The heat exchange unit comprises a reservoir chamber configured to store the coolant; and an evaporation chamber configured to evaporate the coolant stored in the reservoir chamber. The reservoir chamber is connected to the chiller unit and communicates with the evaporation chamber. The evaporation chamber is connected to the chiller unit, extended along the placing surface and includes discharge holes. The discharge holes are arranged such that the coolant is discharged toward a heat transfer wall as a placing surface-side inner wall of the evaporation chamber. The discharge holes are dispersed within the placing surface.

公开(公告)号：US20180218887A1

公开(公告)日：2018-08-02

申请号：US15885951

申请日：2018-02-01

Applicant: Tokyo Electron Limited

Inventor： Takehiko Arita ,  Akiyoshi Mitsumori ,  Shin Yamaguchi

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

Abstract: In a processing apparatus, a cooling table in which a coolant is flown includes first to third regions, and a path group of the coolant. The first region is provided at a center portion of the cooling table. The second region is provided to surround the first region. The third region is provided to surround the first and the second regions. The path group includes first to third paths. The first path to the third path are provided in the first region to the third region, respectively. A pipeline system of the coolant includes a first valve group and a second valve group. The first path and the second path, and the second path and the third path are connected via the first valve group. The chiller unit and the path group are connected via the second valve group.

公开(公告)号：US12165896B2

公开(公告)日：2024-12-10

申请号：US17273009

申请日：2019-09-03

Applicant: Tokyo Electron Limited

Inventor： Akira Nagayama ,  Yasuharu Sasaki ,  Taketoshi Tomioka ,  Shin Yamaguchi

IPC: H01L21/683 ,  H01J37/32

Abstract: A substrate support is provided that includes: a base; an electrostatic chuck on which a substrate is placed; an electrode provided in the electrostatic chuck; a contact portion of the electrode; an adhesive layer that bonds the electrostatic chuck with the base and that does not cover the contact portion; and a power supply terminal contacting the contact portion of the electrode without being fixed to the contact portion.