公开(公告)号：US10373849B2

公开(公告)日：2019-08-06

申请号：US15681603

申请日：2017-08-21

Applicant: Tokyo Electron Limited

Inventor： Junya Minamida ,  Masaru Oda ,  Sho Watanabe

IPC: H01L21/67 ,  H01L21/677

Abstract: A substrate processing apparatus includes a plurality of processing units and a gas supply unit. The plurality of processing units are stacked and arranged, and each configured to hold a substrate in a chamber and to process the substrate by a processing liquid, and the gas supply unit is provided for each of the processing units to supply a gas into each of the processing units. The gas supply unit includes an intake unit and an air supply unit. The intake unit takes in and purifies outside air, and the air supply unit configured to supplies a clean air purified by the intake unit into the processing units. In addition, the intake unit is arranged on a lateral side of the chamber, and is arranged on the same side face of the chambers between the stacked and arranged processing units.

公开(公告)号：US20180061688A1

公开(公告)日：2018-03-01

申请号：US15681603

申请日：2017-08-21

Applicant: Tokyo Electron Limited

Inventor： Junya Minamida ,  Masaru Oda ,  Sho Watanabe

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67178 ,  H01L21/67017 ,  H01L21/67023 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67742

Abstract: A substrate processing apparatus includes a plurality of processing units and a gas supply unit. The plurality of processing units are stacked and arranged, and each configured to hold a substrate in a chamber and to process the substrate by a processing liquid, and the gas supply unit is provided for each of the processing units to supply a gas into each of the processing units. The gas supply unit includes an intake unit and an air supply unit. The intake unit takes in and purifies outside air, and the air supply unit configured to supplies a clean air purified by the intake unit into the processing units. In addition, the intake unit is arranged on a lateral side of the chamber, and is arranged on the same side face of the chambers between the stacked and arranged processing units.

公开(公告)号：US20160020122A1

公开(公告)日：2016-01-21

申请号：US14795316

申请日：2015-07-09

Applicant: Tokyo Electron Limited

Inventor： Sho Watanabe ,  Daisuke Aoki ,  Tooru Nakamura

IPC: H01L21/67

CPC classification number: H01L21/67253 ,  H01L21/67051

Abstract: A substrate processing apparatus includes: a chamber that accommodates a processing target substrate therein; a gas supply unit that supplies a gas into the chamber; a gas discharge port that exhausts the chamber; an adjustment mechanism that adjusts an exhaust amount discharged from the gas discharge port; a measuring unit that measures an internal pressure of the chamber; and a controller that executes a series of substrate processings according to recipe information indicating contents of substrate processings. The controller performs a feedback control that controls an opening degree of the adjustment mechanism to maintain the internal pressure within a prescribed range based on a measurement result from the measuring unit. When a predetermined event, estimated to change the internal pressure to a level out of the prescribed range, occurs, the controller switches the feedback control to a non-feedback control that controls the opening degree based on a prescribed control value.

Abstract translation: 基板处理装置包括：容纳处理对象基板的腔室; 气体供应单元，其将气体供应到所述室中; 排气室的排气口; 调节从排气口排出的排气量的调节机构; 测量单元，其测量所述室的内部压力; 以及控制器，其根据表示基板处理的内容的配方信息执行一系列的基板处理。 控制器基于来自测量单元的测量结果执行控制调节机构的开度以将内部压力维持在规定范围内的反馈控制。 当将预计将内部压力改变到超出规定范围的水平的预定事件发生时，控制器将反馈控制切换到基于规定控制值来控制开度的非反馈控制。