公开(公告)号：US10186433B2

公开(公告)日：2019-01-22

申请号：US14923524

申请日：2015-10-27

Applicant: Tokyo Electron Limited

Inventor： Junya Minamida ,  Daisuke Aoki

IPC: H01L21/67 ,  B08B15/02

Abstract: Particles can be suppressed from adhering to a substrate. A substrate processing apparatus includes a carry-in/out chamber, a transfer chamber, and a delivery chamber. In the carry-in/out chamber, the substrate is carried in and out with respect to a carrier, and in the transfer chamber, a transfer path for the substrate toward a substrate processing chamber, where a predetermined process is performed on the substrate, is formed. Further, the delivery chamber is arranged between the carry-in/out chamber and the transfer chamber. Moreover, an internal pressure of the delivery chamber is higher than an internal pressure of the carry-in/out chamber and an internal pressure of the transfer chamber.

公开(公告)号：US20160121373A1

公开(公告)日：2016-05-05

申请号：US14923524

申请日：2015-10-27

Applicant: Tokyo Electron Limited

Inventor： Junya Minamida ,  Daisuke Aoki

IPC: B08B5/02

CPC classification number: H01L21/67017 ,  B08B15/02 ,  H01L21/67028

Abstract: Particles can be suppressed from adhering to a substrate. A substrate processing apparatus includes a carry-in/out chamber, a transfer chamber, and a delivery chamber. In the carry-in/out chamber, the substrate is carried in and out with respect to a carrier, and in the transfer chamber, a transfer path for the substrate toward a substrate processing chamber, where a predetermined process is performed on the substrate, is formed. Further, the delivery chamber is arranged between the carry-in/out chamber and the transfer chamber. Moreover, an internal pressure of the delivery chamber is higher than an internal pressure of the carry-in/out chamber and an internal pressure of the transfer chamber.

Abstract translation: 可以抑制颗粒附着在基材上。 基板处理装置包括进/出室，输送室和输送室。 在进/出室中，基板相对于载体被携带和移出，并且在传送室中，用于基板朝向基板处理室的传送路径，其中在基板上执行预定处理， 形成了。 此外，输送室布置在进/出室和转移室之间。 此外，输送室的内部压力高于进/出室的内部压力和输送室的内部压力。

公开(公告)号：US20160020122A1

公开(公告)日：2016-01-21

申请号：US14795316

申请日：2015-07-09

Applicant: Tokyo Electron Limited

Inventor： Sho Watanabe ,  Daisuke Aoki ,  Tooru Nakamura

IPC: H01L21/67

CPC classification number: H01L21/67253 ,  H01L21/67051

Abstract: A substrate processing apparatus includes: a chamber that accommodates a processing target substrate therein; a gas supply unit that supplies a gas into the chamber; a gas discharge port that exhausts the chamber; an adjustment mechanism that adjusts an exhaust amount discharged from the gas discharge port; a measuring unit that measures an internal pressure of the chamber; and a controller that executes a series of substrate processings according to recipe information indicating contents of substrate processings. The controller performs a feedback control that controls an opening degree of the adjustment mechanism to maintain the internal pressure within a prescribed range based on a measurement result from the measuring unit. When a predetermined event, estimated to change the internal pressure to a level out of the prescribed range, occurs, the controller switches the feedback control to a non-feedback control that controls the opening degree based on a prescribed control value.

Abstract translation: 基板处理装置包括：容纳处理对象基板的腔室; 气体供应单元，其将气体供应到所述室中; 排气室的排气口; 调节从排气口排出的排气量的调节机构; 测量单元，其测量所述室的内部压力; 以及控制器，其根据表示基板处理的内容的配方信息执行一系列的基板处理。 控制器基于来自测量单元的测量结果执行控制调节机构的开度以将内部压力维持在规定范围内的反馈控制。 当将预计将内部压力改变到超出规定范围的水平的预定事件发生时，控制器将反馈控制切换到基于规定控制值来控制开度的非反馈控制。

公开(公告)号：US20190252223A1

公开(公告)日：2019-08-15

申请号：US16269868

申请日：2019-02-07

Applicant: Tokyo Electron Limited

Inventor： Junya Minamida ,  Tatsuya Ito ,  Yasunori Toyoda ,  Daisuke Aoki

IPC: H01L21/67 ,  B65B55/24 ,  B65B31/04

CPC classification number: H01L21/67201 ,  B65B31/04 ,  B65B55/24

Abstract: A substrate processing apparatus includes a container carrying in/out section on which a substrate conveyance container accommodating a substrate is placed; a processing unit that performs a process on the substrate; a conveyance space through which the substrate is conveyed; a substrate conveyor that conveys the substrate between the container carrying in/out section and the processing unit through the conveyance space; a first gas supply passage that supplies an atmosphere adjusting gas to the processing unit; a first gas discharge passage that discharges the atmosphere adjusting gas from the processing unit; a circulation passage that returns the atmosphere adjusting gas flowing out from the conveyance space to the conveyance space; a second gas supply passage that supplies the atmosphere adjusting gas to a circulation system constituted by the conveyance space and the circulation passage; and a second gas discharge passage that discharges the atmosphere adjusting gas from the circulation system.

公开(公告)号：US11670527B2

公开(公告)日：2023-06-06

申请号：US16733317

申请日：2020-01-03

Applicant: Tokyo Electron Limited

Inventor： Daisuke Aoki ,  Junya Minamida ,  Yasunori Toyoda

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673

CPC classification number: H01L21/6715 ,  H01L21/67393 ,  H01L21/67772

Abstract: A substrate processing apparatus includes a first atmosphere control system configured to control an atmosphere inside a processing zone of a substrate processing area and a second atmosphere control system configured to control an atmosphere inside a substrate transfer zone of the substrate processing area. The first atmosphere control system supplies, when a liquid processing is performed in a liquid processing unit, an atmosphere control gas to the corresponding liquid processing unit by a first gas supply, and discharges an atmosphere inside the corresponding liquid processing unit by a first gas discharge unit. The second atmosphere control system circulates an atmosphere adjustment gas in a circulation system of the corresponding second atmosphere control system, and discharges an atmosphere inside the circulation system of the second atmosphere control system when at least one of the liquid processing unit is opened to the substrate transfer zone.

公开(公告)号：US20220395776A1

公开(公告)日：2022-12-15

申请号：US17805880

申请日：2022-06-08

Applicant: Tokyo Electron Limited

Inventor： Keisuke Tsugao ,  Daisuke Aoki

IPC: B01D53/78 ,  B01D53/34

Abstract: A gas processing apparatus includes a duct, a partition plate and a liquid supply. The duct has therein a flow path through which a gas passes. The partition plate is configured to divide the flow path into multiple spaces, and is formed of a porous material, through which the gas passes, configured to retain a liquid. The liquid supply is configured to supply a dissolving liquid configured to dissolve a target component contained in the gas to the partition plate. The gas passing through the flow path is brought into contact with the dissolving liquid retained in the partition plate.

公开(公告)号：US20200219736A1

公开(公告)日：2020-07-09

申请号：US16733317

申请日：2020-01-03

Applicant: Tokyo Electron Limited

Inventor： Daisuke Aoki ,  Junya Minamida ,  Yasunori Toyoda

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677

Abstract: A substrate processing apparatus includes a first atmosphere control system configured to control an atmosphere inside a processing zone of a substrate processing area and a second atmosphere control system configured to control an atmosphere inside a substrate transfer zone of the substrate processing area. The first atmosphere control system supplies, when a liquid processing is performed in a liquid processing unit, an atmosphere control gas to the corresponding liquid processing unit by a first gas supply, and discharges an atmosphere inside the corresponding liquid processing unit by a first gas discharge unit. The second atmosphere control system circulates an atmosphere adjustment gas in a circulation system of the corresponding second atmosphere control system, and discharges an atmosphere inside the circulation system of the second atmosphere control system when at least one of the liquid processing unit is opened to the substrate transfer zone.