PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20200227241A1

    公开(公告)日:2020-07-16

    申请号:US16735858

    申请日:2020-01-07

    Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, a first power supply configured to apply voltage to the outer peripheral member, and a memory storing information about a relationship between the voltage applied to the outer peripheral member and an adjustment amount of a process parameter. The method includes: applying voltage from the first power supply to the outer peripheral member; adjusting the process parameter based on the voltage applied to the outer peripheral member, by referring to the information stored in the memory; and performing a plasma process under a process condition including the adjusted process parameter.

    PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20200227326A1

    公开(公告)日:2020-07-16

    申请号:US16737168

    申请日:2020-01-08

    Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, and a first power supply configured to apply voltage to the outer peripheral member. The method includes a step of exposing the object to a plasma containing a precursor having a deposition property, while applying voltage from the first power supply to the outer peripheral member. In applying voltage to the outer peripheral member, a status of a deposition film containing carbon that is deposited on the outer peripheral member is monitored, and the voltage applied to the outer peripheral member is controlled based on the monitored status of the deposition film.

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