公开(公告)号：US20200227241A1

公开(公告)日：2020-07-16

申请号：US16735858

申请日：2020-01-07

Applicant: Tokyo Electron Limited

Inventor： Sho OIKAWA ,  Seiji YOKOYAMA ,  Taichi OKANO ,  Shunichi KAWASAKI

IPC: H01J37/32 ,  H01L21/67

Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, a first power supply configured to apply voltage to the outer peripheral member, and a memory storing information about a relationship between the voltage applied to the outer peripheral member and an adjustment amount of a process parameter. The method includes: applying voltage from the first power supply to the outer peripheral member; adjusting the process parameter based on the voltage applied to the outer peripheral member, by referring to the information stored in the memory; and performing a plasma process under a process condition including the adjusted process parameter.

公开(公告)号：US20200227326A1

公开(公告)日：2020-07-16

申请号：US16737168

申请日：2020-01-08

Applicant: Tokyo Electron Limited

Inventor： Sho OIKAWA ,  Seiji YOKOYAMA ,  Taichi OKANO ,  Shunichi KAWASAKI

IPC: H01L21/66 ,  H01L21/02 ,  H01J37/32 ,  C23C16/52 ,  C23C14/54 ,  C23C14/34 ,  C23C16/503

Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, and a first power supply configured to apply voltage to the outer peripheral member. The method includes a step of exposing the object to a plasma containing a precursor having a deposition property, while applying voltage from the first power supply to the outer peripheral member. In applying voltage to the outer peripheral member, a status of a deposition film containing carbon that is deposited on the outer peripheral member is monitored, and the voltage applied to the outer peripheral member is controlled based on the monitored status of the deposition film.

公开(公告)号：US20200168468A1

公开(公告)日：2020-05-28

申请号：US16693609

申请日：2019-11-25

Applicant: Tokyo Electron Limited

Inventor： Takayuki ISHII ,  Taichi OKANO ,  Sho OIKAWA

IPC: H01L21/3065 ,  H01L21/263 ,  H01L21/308 ,  H01L21/67

Abstract: An etching method is provided. In the method, a substrate including an etching target film, a hard mask containing silicon and a patterned resist is provided. A protective film is formed on a surface of the substrate by generating a first plasma from one of a first gas containing carbon, fluorine and a dilute gas, and a second gas containing carbon, hydrogen and the dilute gas. The hard mask is etched by generating a second plasma from a third gas after performing the step of forming the protective film.