公开(公告)号：US20180269101A1

公开(公告)日：2018-09-20

申请号：US15920607

申请日：2018-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasutaka HAMA ,  Seiji YOKOYAMA

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/027

CPC classification number: H01L21/76831 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76877

Abstract: In a method for processing a target object including a conductive layer and an insulating film formed on the conductive layer, the insulating film is etched by plasma treatment of a fluorine-containing gas to form an opening in the insulating film. A barrier film is formed to cover a surface of the insulating film and a surface of the conductive layer which is exposed through the opening formed in the insulating film. The target object having the barrier film is placed in an atmospheric environment, and the barrier film is removed from the target object by isotropically etching the barrier film. The target object is maintained in a depressurized environment from start of etching the insulating film to end of forming the barrier film. The barrier film is conformally formed on the surfaces of the insulating film and the conductive layer exposed through the opening formed in the insulating film.

公开(公告)号：US20200227241A1

公开(公告)日：2020-07-16

申请号：US16735858

申请日：2020-01-07

Applicant: Tokyo Electron Limited

Inventor： Sho OIKAWA ,  Seiji YOKOYAMA ,  Taichi OKANO ,  Shunichi KAWASAKI

IPC: H01J37/32 ,  H01L21/67

Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, a first power supply configured to apply voltage to the outer peripheral member, and a memory storing information about a relationship between the voltage applied to the outer peripheral member and an adjustment amount of a process parameter. The method includes: applying voltage from the first power supply to the outer peripheral member; adjusting the process parameter based on the voltage applied to the outer peripheral member, by referring to the information stored in the memory; and performing a plasma process under a process condition including the adjusted process parameter.

公开(公告)号：US20200227326A1

公开(公告)日：2020-07-16

申请号：US16737168

申请日：2020-01-08

Applicant: Tokyo Electron Limited

Inventor： Sho OIKAWA ,  Seiji YOKOYAMA ,  Taichi OKANO ,  Shunichi KAWASAKI

IPC: H01L21/66 ,  H01L21/02 ,  H01J37/32 ,  C23C16/52 ,  C23C14/54 ,  C23C14/34 ,  C23C16/503

Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, and a first power supply configured to apply voltage to the outer peripheral member. The method includes a step of exposing the object to a plasma containing a precursor having a deposition property, while applying voltage from the first power supply to the outer peripheral member. In applying voltage to the outer peripheral member, a status of a deposition film containing carbon that is deposited on the outer peripheral member is monitored, and the voltage applied to the outer peripheral member is controlled based on the monitored status of the deposition film.

公开(公告)号：US20190043753A1

公开(公告)日：2019-02-07

申请号：US16050525

申请日：2018-07-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiji YOKOYAMA ,  Yasutaka HAMA

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311

Abstract: In a method for processing a target object, the target object includes a wiring layer having a wiring, a diffusion barrier film provided on the wiring layer, an insulating film provided on the diffusion barrier film, and a metal mask provided on the insulating film and having an opening, and the insulating film has a trench formed at a part of a portion exposed through the opening and a first via hole provided at a part of the trench. The method includes: a first step of forming a sacrificial film on the trench and a side surface of the first via hole of the target object; and a second step of forming a second via hole at a deeper portion than a bottom surface of the first via hole by etching the sacrificial film and the insulating film and removing the sacrificial film from the trench and the first via hole.