公开(公告)号：US20240201601A1

公开(公告)日：2024-06-20

申请号：US18593330

申请日：2024-03-01

Applicant: Tokyo Electron Limited

Inventor： Andrew WELOTH ,  Michael MURPHY ,  Daniel J. FULFORD ,  Steven GUECI ,  David C. CONKLIN

IPC: G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70875

Abstract: Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.

公开(公告)号：US20230359128A1

公开(公告)日：2023-11-09

申请号：US18171989

申请日：2023-02-21

Applicant: Tokyo Electron Limited

Inventor： Andrew WELOTH ,  Michael MURPHY ,  Daniel J. FULFORD ,  Steven GUECI ,  David C. CONKLIN

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70875

Abstract: Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.