公开(公告)号：US20230352343A1

公开(公告)日：2023-11-02

申请号：US18308230

申请日：2023-04-27

Applicant: Tokyo Electron Limited

Inventor： Jeffrey SMITH ,  David POWER ,  Eric Chih-Fang LIU ,  Anton J. DEVILLIERS ,  Kandabara TAPILY ,  Jodi GRZESKOWIAK ,  David CONKLIN ,  Michael MURPHY

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/033 ,  H01L23/522

CPC classification number: H01L21/76897 ,  H01L21/76816 ,  H01L21/31144 ,  H01L21/0337 ,  H01L21/76811 ,  H01L23/5226

Abstract: A process includes forming, over a dielectric layer, a hardmask stack including a first layer below a second layer below a third layer below a fourth layer. The first and third layers include a different hardmask material from the second and fourth layers. A trench pattern including sidewall spacer structures is formed over the hardmask stack. The fourth layer is etched in a first region. The fourth and third layers are etched in a second region. The fourth and third layers are etched in a third region. The fourth layer is etched in a fourth region. The second and first layers are etched in the second and third regions. The third layer is etched in the first and fourth regions. In the dielectric layer, trenches are formed in the first and fourth regions, and via openings, deeper than the trenches, are formed in the second and third regions.

公开(公告)号：US20230359128A1

公开(公告)日：2023-11-09

申请号：US18171989

申请日：2023-02-21

Applicant: Tokyo Electron Limited

Inventor： Andrew WELOTH ,  Michael MURPHY ,  Daniel J. FULFORD ,  Steven GUECI ,  David C. CONKLIN

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70875

Abstract: Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.

公开(公告)号：US20230274940A1

公开(公告)日：2023-08-31

申请号：US18312650

申请日：2023-05-05

Applicant: Tokyo Electron Limited

Inventor： Michael MURPHY ,  Jodi GRZESKOWIAK ,  Anton J. DEVILLIERS

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  G03F7/00 ,  G03F7/11

CPC classification number: H01L21/3086 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  G03F7/0035 ,  G03F7/11

Abstract: In method of patterning a substrate, a first relief pattern is formed based on a first layer deposited over a substrate. Openings in the first relief pattern are filled with a reversal material. The first relief pattern is then removed from the substrate and the reversal material remains on the substrate to define a second relief pattern. A fill material is deposited over the substrate that is in contact with the second relief pattern, and sensitive to a photo-acid generated from a photo-acid generator in the second relief pattern. Selected portions of the second relief pattern are exposed to a first actinic radiation to generate the photo-acid in the selected portions of the second relief pattern. The photo-acid are driven from the selected portions of the second relief pattern into portions of the fill material so that the portions of the fill material to become soluble to a predetermined developer.

公开(公告)号：US20230008350A1

公开(公告)日：2023-01-12

申请号：US17684473

申请日：2022-03-02

Applicant: Tokyo Electron Limited

Inventor： Charlotte CUTLER ,  Michael MURPHY ,  Anthony R. SCHEPIS

IPC: H01L21/02

Abstract: Techniques herein include methods for coating a single layer actuator film or multi-layer actuator film on the backside of a wafer. The actuator film includes one or more chemical actuators. Chemical actuators are various molecules, crystals, chemical compounds and other chemical compositions that are capable of imposing directional stress in response to application of an external stimulus on the chemical actuator. The external stimulus can include a particular wavelength of light or polarization of light, or heat (or directed infrared radiation) or load, which can include load-responsive actuation or pressure-responsive actuation.

公开(公告)号：US20240201601A1

公开(公告)日：2024-06-20

申请号：US18593330

申请日：2024-03-01

Applicant: Tokyo Electron Limited

Inventor： Andrew WELOTH ,  Michael MURPHY ,  Daniel J. FULFORD ,  Steven GUECI ,  David C. CONKLIN

IPC: G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70875

Abstract: Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.

公开(公告)号：US20220388232A1

公开(公告)日：2022-12-08

申请号：US17831047

申请日：2022-06-02

Applicant: Tokyo Electron Limited

Inventor： Charlotte CUTLER ,  Michael MURPHY

IPC: B29C59/16 ,  B29C59/00 ,  B29C37/00 ,  B29C71/00

Abstract: Techniques herein include methods of patterning a substrate using surface energy differences found in some fluorinated polymers or polymers with long chain alkyl functionality that promotes surface or top layer segregation in a bilayer polymer system to facilitate overburden removal when the polymer mixture is deposited over a relief pattern. The method allows for fast removal of the overburden to expose the anti-spacer region which, after acid diffusion and subsequent deprotection, is also soluble in a developer. Incorporating the highly developer-soluble polymer at the top of the top layer removes the need for the remaining polymer to have a specific dissolution rate in developer.

公开(公告)号：US20220336226A1

公开(公告)日：2022-10-20

申请号：US17703072

申请日：2022-03-24

Applicant: Tokyo Electron Limited

Inventor： Charlotte CUTLER ,  Michael MURPHY ,  David CONKLIN

IPC: H01L21/324 ,  G03F7/00

Abstract: Techniques herein include methods for forming a direct write, tunable stress film and methods for correcting wafer bow using said stress film. The method can be executed on a coater-developer tool or track-based tool. The stress film can be based on a film that undergoes crosslinking/decrosslinking under external stimulus where direct write is achieved by, but is not limited to, 365 nm exposure and subsequent cure is used to “pattern-in” stress. No develop step may be required, which provides additional significant benefit in conserving film planarity. An amount of bow (or internal stress to create or affect a bow signature) can be tuned with exposure dose, bake temperature, bake time and number of bakes.