公开(公告)号：US20230326814A1

公开(公告)日：2023-10-12

申请号：US17885038

申请日：2022-08-10

Applicant: Tokyo Electron Limited

Inventor： Anthony R. SCHEPIS ,  Andrew WELOTH ,  David C. CONKLIN ,  Anton J. DEVILLIERS

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/68 ,  H01L21/02

CPC classification number: H01L22/34 ,  H01L21/67063 ,  H01L21/0226 ,  H01L21/68 ,  H01L21/67098

Abstract: A device includes a first set of modules configured for wafer shape correction and a second set of modules configured for wafer bonding. The first set of modules includes a metrology module configured to measure wafer shape data of a first wafer and a second wafer, including relative z-height values of the first wafer and the second wafer. A stressor film deposition module is configured to form a first stressor film on the first wafer. A stressor film modification module is configured to modify the first stressor film based on a first modification map that defines adjustments to internal stresses of the first wafer and is generated based on the wafer shape data. The second set of modules includes an alignment module configured to align the first wafer with the second wafer, and a bonding module configured to bond the first wafer to the second wafer.

公开(公告)号：US20230326767A1

公开(公告)日：2023-10-12

申请号：US17885097

申请日：2022-08-10

Applicant: Tokyo Electron Limited

Inventor： Anthony R. SCHEPIS ,  Andrew WELOTH ,  David C. CONKLIN ,  Anton J. DEVILLIERS

IPC: H01L21/56 ,  H01L23/00 ,  H01L21/67 ,  H01L23/31 ,  H01L21/66

CPC classification number: H01L21/56 ,  H01L24/80 ,  H01L21/67225 ,  H01L21/67109 ,  H01L21/67092 ,  H01L23/3171 ,  H01L22/20 ,  H01L2224/80007 ,  H01L2224/80013 ,  H01L2224/80011 ,  H01L2224/08145 ,  H01L24/08 ,  H01L23/291

Abstract: A method, for bonding a first wafer to a second wafer, includes generating a first modification map based on wafer shape data of the first wafer and the second wafer. The first modification map defines adjustments to internal stresses of the first wafer. A first wafer shape of the first wafer is modified by forming a first stressor film on the first wafer based on the first modification map. The first wafer is aligned with the second wafer after the modifying. The first wafer is bonded to the second wafer.

公开(公告)号：US20230359128A1

公开(公告)日：2023-11-09

申请号：US18171989

申请日：2023-02-21

Applicant: Tokyo Electron Limited

Inventor： Andrew WELOTH ,  Michael MURPHY ,  Daniel J. FULFORD ,  Steven GUECI ,  David C. CONKLIN

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70875

Abstract: Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.

公开(公告)号：US20240201601A1

公开(公告)日：2024-06-20

申请号：US18593330

申请日：2024-03-01

Applicant: Tokyo Electron Limited

Inventor： Andrew WELOTH ,  Michael MURPHY ,  Daniel J. FULFORD ,  Steven GUECI ,  David C. CONKLIN

IPC: G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70875

Abstract: Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.

公开(公告)号：US20230326738A1

公开(公告)日：2023-10-12

申请号：US17967257

申请日：2022-10-17

Applicant: Tokyo Electron Limited

Inventor： Anthony R. SCHEPIS ,  Daniel J. FULFORD ,  David C. CONKLIN ,  Anton J. DEVILLIERS

IPC: H01L21/02

CPC classification number: H01L21/02118 ,  H01L21/02318

Abstract: Methods described herein address the chuck degradation challenge that can result in wafer distortion upon wafer coupling, leading to downstream fabrication issues. Techniques include actively monitoring wear of a chuck and counteracting chuck degradation by wafer shape manipulation to maintain an ideal working surface. Techniques include using chuck-based flatness metrology and/or modeling based on previous wafer level results and/or historical database of chuck wear information.