公开(公告)号：US20240203778A1

公开(公告)日：2024-06-20

申请号：US18085354

申请日：2022-12-20

Applicant: Tokyo Electron Limited

Inventor： David POWER ,  David CONKLIN ,  Anthony SCHEPIS ,  Andrew WELOTH ,  Anton DEVILLIERS

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/683 ,  H01L23/544

CPC classification number: H01L21/681 ,  H01L21/67265 ,  H01L21/6835 ,  H01L23/544 ,  H01L2221/68363 ,  H01L2223/54426

Abstract: A method includes providing a carrier substrate having a die bonded thereto, where the die includes a first alignment mark on a first surface. The method includes positioning a target substrate with a second surface on a substrate stage, where the target substrate includes a second alignment mark on the second surface. The method includes positioning the carrier substrate with respect to a die handler, where the die handler includes a third alignment mark. The method includes coupling the die to the die handler, where the step of coupling includes aligning the first alignment mark with the third alignment mark. The method includes positioning the coupled die and the die handler over the target substrate, where the step of positioning includes aligning the second alignment mark with at least one of the first alignment mark and the third alignment mark. The method includes bonding the first surface with the second surface.

公开(公告)号：US20230326814A1

公开(公告)日：2023-10-12

申请号：US17885038

申请日：2022-08-10

Applicant: Tokyo Electron Limited

Inventor： Anthony R. SCHEPIS ,  Andrew WELOTH ,  David C. CONKLIN ,  Anton J. DEVILLIERS

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/68 ,  H01L21/02

CPC classification number: H01L22/34 ,  H01L21/67063 ,  H01L21/0226 ,  H01L21/68 ,  H01L21/67098

Abstract: A device includes a first set of modules configured for wafer shape correction and a second set of modules configured for wafer bonding. The first set of modules includes a metrology module configured to measure wafer shape data of a first wafer and a second wafer, including relative z-height values of the first wafer and the second wafer. A stressor film deposition module is configured to form a first stressor film on the first wafer. A stressor film modification module is configured to modify the first stressor film based on a first modification map that defines adjustments to internal stresses of the first wafer and is generated based on the wafer shape data. The second set of modules includes an alignment module configured to align the first wafer with the second wafer, and a bonding module configured to bond the first wafer to the second wafer.

公开(公告)号：US20230326767A1

公开(公告)日：2023-10-12

申请号：US17885097

申请日：2022-08-10

Applicant: Tokyo Electron Limited

Inventor： Anthony R. SCHEPIS ,  Andrew WELOTH ,  David C. CONKLIN ,  Anton J. DEVILLIERS

IPC: H01L21/56 ,  H01L23/00 ,  H01L21/67 ,  H01L23/31 ,  H01L21/66

CPC classification number: H01L21/56 ,  H01L24/80 ,  H01L21/67225 ,  H01L21/67109 ,  H01L21/67092 ,  H01L23/3171 ,  H01L22/20 ,  H01L2224/80007 ,  H01L2224/80013 ,  H01L2224/80011 ,  H01L2224/08145 ,  H01L24/08 ,  H01L23/291

Abstract: A method, for bonding a first wafer to a second wafer, includes generating a first modification map based on wafer shape data of the first wafer and the second wafer. The first modification map defines adjustments to internal stresses of the first wafer. A first wafer shape of the first wafer is modified by forming a first stressor film on the first wafer based on the first modification map. The first wafer is aligned with the second wafer after the modifying. The first wafer is bonded to the second wafer.

公开(公告)号：US20230359128A1

公开(公告)日：2023-11-09

申请号：US18171989

申请日：2023-02-21

Applicant: Tokyo Electron Limited

Inventor： Andrew WELOTH ,  Michael MURPHY ,  Daniel J. FULFORD ,  Steven GUECI ,  David C. CONKLIN

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70875

Abstract: Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.

公开(公告)号：US20240203797A1

公开(公告)日：2024-06-20

申请号：US18081207

申请日：2022-12-14

Applicant: Tokyo Electron Limited

Inventor： Andrew WELOTH ,  Daniel FULFORD ,  Anthony SCHEPIS ,  Mark I. GARDNER ,  H. Jim FULFORD ,  Anton DEVILLIERS ,  David CONKLIN

IPC: H01L21/66 ,  G03F7/00 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L22/20 ,  G03F7/0035 ,  H01L21/02002 ,  H01L21/67092 ,  H01L21/67288

Abstract: Aspects of the present disclosure provide a bonding device for bonding two wafers. For example, the bonding device can include a first bonding chuck and a second bonding chuck. The first bonding chuck can have a first bonding head for a first wafer to be mounted thereon. The second bonding chuck can have a plurality of second bonding heads for a second wafer to be mounted thereon. The second bonding heads can be controlled individually to apply local pressures onto the second wafer to move the second wafer toward the first wafer to bond the second wafer to the first wafer, the local pressures corresponding to bow measurement of the first wafer and the second wafer.

公开(公告)号：US20240201601A1

公开(公告)日：2024-06-20

申请号：US18593330

申请日：2024-03-01

Applicant: Tokyo Electron Limited

Inventor： Andrew WELOTH ,  Michael MURPHY ,  Daniel J. FULFORD ,  Steven GUECI ,  David C. CONKLIN

IPC: G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70875

Abstract: Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.