公开(公告)号：US20240274438A1

公开(公告)日：2024-08-15

申请号：US18644661

申请日：2024-04-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi YAMAUCHI ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/0337 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/31144 ,  H01L21/6715

Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

公开(公告)号：US20180164689A1

公开(公告)日：2018-06-14

申请号：US15823661

申请日：2017-11-28

Applicant: Tokyo Electron Limited

Inventor： Yohei SANO ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO ,  Takahiro SHIOZAWA ,  Keisuke YOSHIDA ,  Tomoya ONITSUKA

IPC: G03F7/38 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/67 ,  G03F7/004

CPC classification number: G03F7/38 ,  G03F7/0043 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/31058 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6719

Abstract: A thermal treatment apparatus that performs a thermal treatment on a metal-containing film formed on a substrate, includes: a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film, wherein at the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.

公开(公告)号：US20240192111A1

公开(公告)日：2024-06-13

申请号：US18552108

申请日：2022-03-22

Applicant: Tokyo Electron Limited

Inventor： Hiroshi MARUMOTO ,  Suguen LEE ,  Masashi ENOMOTO

IPC: G01N15/075 ,  G01N15/00 ,  H01L21/67

CPC classification number: G01N15/075 ,  G01N2015/0011 ,  H01L21/67075

Abstract: A substrate liquid-processing apparatus includes: a processing tank storing a processing liquid for liquid-processing of a substrate within an inside; an imager configured to acquire an image of the processing liquid of the inside of the processing tank; and an image processor comprising a bubble data acquisitor configured to perform image processing on the image and to acquire bubble data representing the state of bubbles in the processing liquid.

公开(公告)号：US20210208504A1

公开(公告)日：2021-07-08

申请号：US17056096

申请日：2019-05-17

Applicant: Tokyo Electron Limited

Inventor： Takashi YAMAUCHI ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO

IPC: G03F7/16 ,  G03F7/20

Abstract: A substrate processing method includes: forming a coating film on a substrate by supplying a resist liquid which is photosensitive to extreme ultraviolet (EUV) light to a surface of the substrate; forming a semi-solidified film by volatilizing a solvent contained in the coating film without heating the solvent; irradiating the semi-solidified film with EUV light thereby exposing the semi-solidified film with EUV light; and supplying a developer to the substrate after the exposure of the semi-solidified film.

公开(公告)号：US20200096966A1

公开(公告)日：2020-03-26

申请号：US16696405

申请日：2019-11-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Teruhiko KODAMA ,  Masashi ENOMOTO

IPC: G05B19/406 ,  H01L21/677 ,  H01L21/67 ,  G05B23/02 ,  H01L21/302 ,  H01L21/66 ,  G05B19/418

Abstract: A substrate processing apparatus includes a film-forming device that forms a photosensitive film on a front surface of a substrate, a warping data acquisition device that acquires measured warping data of the substrate, a roughening process device that applies roughening process on a back surface of the substrate, and a control device including circuitry that controls the warping data acquisition device such that after the photosensitive film is formed on the front surface of the substrate, the warping data acquisition device acquires the measured warping data before the photosensitive film on the substrate undergoes exposure process, and control the roughening process device such that before the photosensitive film on the substrate undergoes the exposure process, the roughening process device applies the roughening process on the back surface of the substrate based on the measured warping data.

公开(公告)号：US20190355573A1

公开(公告)日：2019-11-21

申请号：US16481136

申请日：2018-01-04

Applicant: Tokyo Electron Limited

Inventor： Satoru SHIMURA ,  Masashi ENOMOTO

IPC: H01L21/027 ,  H01L21/66 ,  H01L21/02 ,  G03F7/16

Abstract: A film forming system is to form an organic film on a substrate having a pattern formed on a surface thereof, includes: an organic film formation section configured to perform an organic film formation treatment on the substrate to form the organic film on the substrate; a film thickness measurement section configured to measure a film thickness of the organic film on the substrate; and an ultraviolet treatment section configured to perform an ultraviolet irradiation treatment on the organic film on the substrate to remove a surface of the organic film. In the film forming system, the organic film formation section, the film thickness measurement section, and the ultraviolet treatment section are disposed side by side in this order along a transfer direction of the substrate.

公开(公告)号：US20180076066A1

公开(公告)日：2018-03-15

申请号：US15565714

申请日：2016-03-28

Applicant: Tokyo Electron Limited

Inventor： Masashi ENOMOTO ,  Yoshihiro KONDO

IPC: H01L21/67 ,  H01L21/677 ,  G03F7/20

Abstract: A technique enabling a stable resist pattern forming process, when substrate processing apparatuses that perform a resist coating process separately from a developing process. A wafer having been heated after a resist coating process in a first substrate processing apparatus is also heated before an exposure process in a second substrate processing apparatus. Thus, even when amine in an atmosphere adheres to the wafer while it is being transported from the first substrate processing apparatus to the second substrate processing apparatus, the amine scatters by the heating process. At least one of a heating time and a heating temperature is adjusted based on a substrate rest time which includes a period of time between a time point at which a FOUP 10 is unloaded from the first substrate processing apparatus and a time point at which the FOUP 10 is loaded into the second substrate processing apparatus.

公开(公告)号：US20230042982A1

公开(公告)日：2023-02-09

申请号：US17969878

申请日：2022-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi YAMAUCHI ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/67

Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the antireflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

公开(公告)号：US20220398708A1

公开(公告)日：2022-12-15

申请号：US17833876

申请日：2022-06-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masashi ENOMOTO ,  Masato HOSAKA

IPC: G06T7/00

Abstract: A substrate inspection device for inspecting a substrate, includes: a setting part configured to define a group according to a basic state that is not dependent on a presence or absence of a defect in a substrate and set the defined group for each inspection target substrate; an inspection part configured to perform a defect inspection based on a captured image of the inspection target substrate and an inspection recipe corresponding to the defined group to which the inspection target substrate belongs and including a reference image; a recipe creation part configured to create the inspection recipe for each group; and a determination part configured to perform a determination as to whether a group-setting target substrate, for which the group is set by the setting part, belongs to the group defined by the setting part.

公开(公告)号：US20210249277A1

公开(公告)日：2021-08-12

申请号：US17271165

申请日：2019-08-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro SHIOZAWA ,  Masashi ENOMOTO

IPC: H01L21/461 ,  H01L21/033 ,  H01L21/48

Abstract: A substrate processing method is a method of processing a substrate on which a metal-containing liquid for a film below a resist is applied, wherein prior to a heating process of performing a heat treatment on the substrate applied with the metal-containing liquid, the substrate processing method includes: a deprotection promoting process of promoting deprotection of functional groups in a material for the film included in the substrate on which the metal-containing liquid has been applied; a solvent removing process of removing a solvent included in the metal-containing liquid on the substrate; and a moisture absorbing process of bringing a surface of the substrate into contact with moisture.