公开(公告)号：US20210005477A1

公开(公告)日：2021-01-07

申请号：US16910575

申请日：2020-06-24

Applicant: Tokyo Electron Limited

Inventor： Ryou Son ,  Sinya Sasaki ,  Hiroyuki Kondo ,  Syuntaro Tamaraya ,  Takaaki Kikuchi

IPC: H01L21/67 ,  C23C16/48 ,  C23C16/44 ,  C23C16/458

Abstract: A substrate processing apparatus includes an inner wall formed of a heat conductive material, a quartz liner that covers the inner wall, and a cooling unit that cools the inner wall. A gap is formed between the inner wall and the quartz liner, and a sealing member is provided in the gap to seal the gap. The gap is filled with a heat conductive medium.