Plasma processing apparatus
    1.
    发明授权

    公开(公告)号:US11676799B2

    公开(公告)日:2023-06-13

    申请号:US17198043

    申请日:2021-03-10

    Abstract: A plasma processing apparatus includes a chamber; a first electrode facing an inside of the chamber; a radio-frequency power supply configured to supply a radio-frequency power to the first electrode; a feeding rod configured to feed the radio-frequency power to a center of a surface of the first electrode opposite to a surface facing the inside of the chamber; a conductive plate provided in parallel to the surface of the first electrode opposite to the surface facing the inside of the chamber, the plate being grounded; and a dielectric plate connecting the first electrode and the conductive plate, and having a shape that is rotationally symmetric with respect to a center of the first electrode.

    Antenna, plasma processing device and plasma processing method

    公开(公告)号:US10832892B2

    公开(公告)日:2020-11-10

    申请号:US16478770

    申请日:2018-01-04

    Abstract: An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

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