公开(公告)号：US20220102159A1

公开(公告)日：2022-03-31

申请号：US17488322

申请日：2021-09-29

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Taihei MATSUHASHI ,  Masanori HOSOYA ,  Hiroie MATSUMOTO

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: An etching method includes: (a) providing a substrate including a silicon-containing film on a substrate support; (b) adjusting a temperature of the substrate support to −20° C. or lower; (c) supplying a processing gas including a nitrogen-containing gas, into the chamber; (d) etching the silicon-containing film by using plasma generated from the processing gas. A recess is formed by etching the silicon-containing film, and a by-product containing silicon and nitrogen adheres to a side wall of the recess. The etching method further includes (e) setting at least one etching parameter of the temperature of the substrate support and the flow rate of the nitrogen-containing gas included in the processing gas, to adjust the width of the bottom of the recess according to an adhesion amount of the by-product, before (b).

公开(公告)号：US20240212982A1

公开(公告)日：2024-06-27

申请号：US18544237

申请日：2023-12-18

Applicant: Tokyo Electron Limited

Inventor： Taihei MATSUHASHI ,  Wakako ISHIDA

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J2237/332 ,  H01J2237/334

Abstract: A disclosed etching method includes (a) preparing a substrate on a substrate support in a chamber. The substrate includes a multilayer film including a plurality of first films and a plurality of second films that are alternately stacked with the plurality of first films, and a mask disposed on the multilayer film. The etching method further includes (b) etching one or more first films among the plurality of first films. The etching method further includes (c) etching one or more second films among the plurality of second films. In each of the (b) and (c), a pulse of a source radio frequency power for plasma generation and a pulse of an electric bias for ion attraction are intermittently or periodically supplied.