公开(公告)号：US20150287618A1

公开(公告)日：2015-10-08

申请号：US14747396

申请日：2015-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroie MATSUMOTO ,  Kazuto OGAWA

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/505 ,  H01J37/32

CPC classification number: H01L21/67069 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/8221 ,  H01L27/11556

Abstract: Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.

Abstract translation: 提供了一种等离子体处理方法和等离子体处理装置，其可以在蚀刻停止层的表面上形成保护膜，并且在蚀刻氧化物层时抑制孔的堵塞。 等离子体处理方法在包括氧化物层，多个由钨制成的多个蚀刻停止层和掩​​模层的多层膜中形成具有不同深度的多个孔。 等离子体处理方法包括蚀刻工艺，其中提供处理气体以产生等离子体，使得从氧化物层的顶表面到多个蚀刻停止层进行蚀刻，以便在氧化物层中形成具有不同深度的孔 。 这里，处理气体包括碳氟化合物系气体，稀有气体，氧气和氮气。

公开(公告)号：US20220102159A1

公开(公告)日：2022-03-31

申请号：US17488322

申请日：2021-09-29

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Taihei MATSUHASHI ,  Masanori HOSOYA ,  Hiroie MATSUMOTO

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: An etching method includes: (a) providing a substrate including a silicon-containing film on a substrate support; (b) adjusting a temperature of the substrate support to −20° C. or lower; (c) supplying a processing gas including a nitrogen-containing gas, into the chamber; (d) etching the silicon-containing film by using plasma generated from the processing gas. A recess is formed by etching the silicon-containing film, and a by-product containing silicon and nitrogen adheres to a side wall of the recess. The etching method further includes (e) setting at least one etching parameter of the temperature of the substrate support and the flow rate of the nitrogen-containing gas included in the processing gas, to adjust the width of the bottom of the recess according to an adhesion amount of the by-product, before (b).

公开(公告)号：US20140120732A1

公开(公告)日：2014-05-01

申请号：US14064293

申请日：2013-10-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroie MATSUMOTO ,  Kazuto OGAWA

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/8221 ,  H01L27/11556

Abstract: Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.

Abstract translation: 提供了一种等离子体处理方法和等离子体处理装置，其可以在蚀刻停止层的表面上形成保护膜，并且在蚀刻氧化物层时抑制孔的堵塞。 等离子体处理方法在包括氧化物层，多个由钨制成的多个蚀刻停止层和掩​​模层的多层膜中形成具有不同深度的多个孔。 等离子体处理方法包括蚀刻工艺，其中提供处理气体以产生等离子体，使得从氧化物层的顶表面到多个蚀刻停止层进行蚀刻，以便在氧化物层中形成具有不同深度的孔 。 这里，处理气体包括碳氟化合物系气体，稀有气体，氧气和氮气。