公开(公告)号：US20220195609A1

公开(公告)日：2022-06-23

申请号：US17553971

申请日：2021-12-17

Applicant: Tokyo Electron Limited

Inventor： Takashi NAKAZAWA ,  Isamu MIYAMOTO ,  Keigo SATAKE ,  Kenji NAKAMIZO

IPC: C23F1/26 ,  C23F1/08

Abstract: A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

公开(公告)号：US20240084458A1

公开(公告)日：2024-03-14

申请号：US18517341

申请日：2023-11-22

Applicant: Tokyo Electron Limited

Inventor： Takashi NAKAZAWA ,  Isamu MIYAMOTO ,  Keigo SATAKE ,  Kenji NAKAMIZO

IPC: C23F1/26 ,  C23F1/08

CPC classification number: C23F1/26 ,  C23F1/08

Abstract: A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

公开(公告)号：US20210210363A1

公开(公告)日：2021-07-08

申请号：US17141670

申请日：2021-01-05

Applicant: Tokyo Electron Limited

Inventor： Hiroki SAKURAI ,  Daisuke GOTO ,  Takashi NAKAZAWA ,  Yusuke TAKAMATSU ,  Yusuke HASHIMOTO

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/02 ,  B08B3/08 ,  B08B3/10

Abstract: A substrate processing apparatus includes: a temperature raising part for raising a temperature of a first sulfuric acid; a mixing part for mixing the first sulfuric acid where the temperature is raised by the temperature raising part with a moisture-containing liquid to generate a mixed solution; and a discharging part for discharging the mixed solution onto a substrate inside a substrate processing part. The mixing part includes: a joining portion where a sulfuric acid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part flows and a liquid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part and the moisture-containing liquid flows are joined; and a reaction suppression mechanism for suppressing a reaction between the first sulfuric acid and the moisture-containing liquid in the joining portion.