公开(公告)号：US20200273725A1

公开(公告)日：2020-08-27

申请号：US16801699

申请日：2020-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki SAKURAI

IPC: H01L21/67 ,  H01L21/673

Abstract: A substrate processing apparatus includes: a substrate holder configured to hold a substrate; a processing liquid supply part configured to supply a processing liquid to the substrate held by the substrate holder; a chemical liquid supply part configured to supply a chemical liquid as a component of the processing liquid to the processing liquid supply part; a pure water supply part configured to supply pure water as a component of the processing liquid to the processing liquid supply part; a low-dielectric constant solvent supply part configured to supply a low-dielectric constant solvent as a component of the processing liquid to the processing liquid supply part; and a controller configured to control a ratio of the chemical liquid, the pure water, and the low-dielectric constant solvent contained in the processing liquid by controlling the chemical liquid supply part, the pure water supply part, the low-dielectric constant solvent supply part.

公开(公告)号：US20140080312A1

公开(公告)日：2014-03-20

申请号：US13910249

申请日：2013-06-05

Applicant: Tokyo Electron Limited ,  Sony Corporation

Inventor： Hayato IWAMOTO ,  Yoshiya HAGIMOTO ,  Tomoki TETSUKA ,  Shinichiro SHIMOMURA ,  Teruomi MINAMI ,  Hiroki SAKURAI ,  Hirotaka MARUYAMA ,  Yosuke KAWABUCHI ,  Hiroshi TANAKA

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02019 ,  H01L21/02052 ,  H01L21/30608 ,  H01L21/6708

Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.

Abstract translation: 晶片被水平地保持并由基板保持机构旋转。 通过喷嘴将水性碱性溶液供给到晶片，并使其从晶片的中心部分流向周边边缘部分，从而蚀刻晶片。 预先将一定量的氧气等于或大于在流过晶片的碱性水溶液中所涉及的大气中的氧气的量，将其溶解在碱性水溶液中。

公开(公告)号：US20230268207A1

公开(公告)日：2023-08-24

申请号：US18297042

申请日：2023-04-07

Applicant: Tokyo Electron Limited

Inventor： Hiroki SAKURAI ,  Kazuki KOSAI ,  Kazuyoshi SHINOHARA

IPC: H01L21/67 ,  B08B3/02 ,  B08B13/00

CPC classification number: H01L21/67253 ,  B08B3/022 ,  B08B13/00 ,  H01L21/67023

Abstract: A method includes: supplying a processing liquid to a center position of a substrate surface; shifting a supply position of the processing liquid from the center position to a first eccentric position; holding the supply position of the processing liquid at the first eccentric position and supplying a substitute liquid to a second eccentric position; shifting the supply position of the processing liquid in a direction away from the center position, and shifting a supply position of the substitute liquid to the center position; and supplying the processing liquid to the first eccentric position at a first flow rate, and reducing the flow rate of the processing liquid to a second flow rate after the supply position of the processing liquid starts to be shifted from the first eccentric position in the direction and until the supply position of the substitute liquid reaches the center position.

公开(公告)号：US20230099012A1

公开(公告)日：2023-03-30

申请号：US17905551

申请日：2021-02-22

Applicant: Tokyo Electron Limited

Inventor： Hiroki SAKURAI ,  Kazuki KOSAI ,  Kazuyoshi SHINOHARA

IPC: H01L21/67 ,  B08B3/02 ,  B08B13/00

Abstract: A method includes: supplying a processing liquid to a center position of a substrate surface; shifting a supply position of the processing liquid from the center position to a first eccentric position; holding the supply position of the processing liquid at the first eccentric position and supplying a substitute liquid to a second eccentric position; shifting the supply position of the processing liquid in a direction away from the center position, and shifting a supply position of the substitute liquid to the center position; and supplying the processing liquid to the first eccentric position at a first flow rate, and reducing the flow rate of the processing liquid to a second flow rate after the supply position of the processing liquid starts to be shifted from the first eccentric position in the direction and until the supply position of the substitute liquid reaches the center position.

公开(公告)号：US20220334491A1

公开(公告)日：2022-10-20

申请号：US17716207

申请日：2022-04-08

Applicant: Tokyo Electron Limited

Inventor： Hiroki SAKURAI

IPC: G03F7/42

Abstract: A substrate processing apparatus includes: a holding unit that holds a substrate; a liquid discharge unit; a first supply unit; a second supply unit; and a control unit that controls each unit. The liquid discharge unit discharges a processing liquid to the substrate held by the holding unit. The first supply unit supplies the processing liquid to the liquid discharge unit. The second supply unit supplies steam to the liquid discharge unit. The second supply unit includes: a steam generator that generates steam; a supply line; a stabilizing mechanism; a pressure gauge that measures a pressure of the steam flowing through the supply line; and a pressure adjustment mechanism. The control unit controls the pressure adjustment mechanism so that the pressure of the steam measured by the pressure gauge becomes a preset pressure.

公开(公告)号：US20220112603A1

公开(公告)日：2022-04-14

申请号：US17495837

申请日：2021-10-07

Applicant: Tokyo Electron Limited

Inventor： Hiroki SAKURAI ,  Daisuke GOTO ,  Nobuhiro OGATA ,  Yusuke HASHIMOTO ,  Shoki MIZUGUCHI ,  Yenrui HSU

IPC: C23C18/18 ,  C23C18/16

Abstract: A substrate processing method includes discharging a processing liquid to a substrate, and discharging a mixed fluid that is produced by mixing a processing liquid and a purified water in a vapor state or a mist state thereof to a substrate where a processing liquid is discharged.

公开(公告)号：US20250046627A1

公开(公告)日：2025-02-06

申请号：US18782194

申请日：2024-07-24

Applicant: Tokyo Electron Limited

Inventor： Hiroki SAKURAI

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a rotational holding part that holds a substrate, a cleaning nozzle that discharges a mixed fluid of a cleaning liquid and a gas onto the substrate, a liquid supply nozzle that discharges a liquid onto the substrate, and a controller, wherein the controller executes, at least, discharging the liquid from the liquid supply nozzle to a central part of the substrate, discharging the cleaning liquid from the cleaning nozzle to a central part of the substrate, discharging the gas at a first flow rate from the cleaning nozzle onto the substrate to discharge the mixed fluid to a central part of the substrate, and moving the cleaning nozzle and the liquid supply nozzle from a central part to a peripheral part of the substrate while changing a flow rate of the gas to a second flow rate that is greater than the first flow rate.

公开(公告)号：US20240290639A1

公开(公告)日：2024-08-29

申请号：US18647126

申请日：2024-04-26

Applicant: Tokyo Electron Limited

Inventor： Hiroki SAKURAI ,  Kazuki KOSAI ,  Kazuyoshi SHINOHARA

IPC: H01L21/67 ,  B08B3/02 ,  B08B13/00

CPC classification number: H01L21/67253 ,  B08B3/022 ,  B08B13/00 ,  H01L21/67023

Abstract: A method includes: supplying a processing liquid to a center position of a substrate surface; shifting a supply position of the processing liquid from the center position to a first eccentric position; holding the supply position of the processing liquid at the first eccentric position and supplying a substitute liquid to a second eccentric position; shifting the supply position of the processing liquid in a direction away from the center position, and shifting a supply position of the substitute liquid to the center position; and supplying the processing liquid to the first eccentric position at a first flow rate, and reducing the flow rate of the processing liquid to a second flow rate after the supply position of the processing liquid starts to be shifted from the first eccentric position in the direction and until the supply position of the substitute liquid reaches the center position.

公开(公告)号：US20240021445A1

公开(公告)日：2024-01-18

申请号：US18215184

申请日：2023-06-28

Applicant: Tokyo Electron Limited

Inventor： Hiroki SAKURAI ,  Yenrui HSU ,  Shoki MIZUGUCHI ,  Nobuhiro OGATA ,  Shinichi UMENO ,  Kazuya GODA ,  Minsung KIM ,  Hiroyuki HIGASHI

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/02057

Abstract: A substrate processing apparatus according to the present disclosure includes a substrate holding unit, a fluid supplying unit, a processing-liquid supplying unit, a nozzle, a fluid amount adjusting unit, and a controller. The substrate holding unit holds a substrate to be rotatable. The fluid supplying unit supplies fluid including pressurized vapor or mist of deionized water. The processing-liquid supplying unit supplies processing liquid including at least a sulfuric acid. The nozzle is connected to the fluid supplying unit and the processing-liquid supplying unit to discharge mixed fluid of the fluid and the processing liquid toward the substrate. The fluid amount adjusting unit adjusts a flow volume of the fluid that is flowing through the fluid supplying unit. The controller controls the fluid amount adjusting unit to adjust a ratio of the fluid to the processing liquid.

公开(公告)号：US20220375768A1

公开(公告)日：2022-11-24

申请号：US17878132

申请日：2022-08-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki SAKURAI

IPC: H01L21/67 ,  H01L21/673 ,  B05B7/26 ,  B05B12/14 ,  B05B12/00 ,  B05B12/04 ,  B05B1/14 ,  B05B1/02 ,  B05B7/24 ,  G05D11/02

Abstract: A substrate processing apparatus includes: a substrate holder configured to hold a substrate; a processing liquid supply part configured to supply a processing liquid to the substrate held by the substrate holder; a chemical liquid supply part configured to supply a chemical liquid as a component of the processing liquid to the processing liquid supply part; a pure water supply part configured to supply pure water as a component of the processing liquid to the processing liquid supply part; a low-dielectric constant solvent supply part configured to supply a low-dielectric constant solvent as a component of the processing liquid to the processing liquid supply part; and a controller configured to control a ratio of the chemical liquid, the pure water, and the low-dielectric constant solvent contained in the processing liquid by controlling the chemical liquid supply part, the pure water supply part, the low-dielectric constant solvent supply part.