公开(公告)号：US20210305027A1

公开(公告)日：2021-09-30

申请号：US17196089

申请日：2021-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Joji TAKAYOSHI ,  Ryuta AKIMOTO ,  Takehito WATANABE

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus including a processing container and a conductive member, includes a plasma generator configured to generate plasma in the processing container, a power application part configured to apply a DC power to the conductive member in a state in which plasma is generated in the processing container by the plasma generator, a measurement part configured to measure a physical quantity related to the DC power applied by the power application part, and a calculator configured to obtain a wear amount of the conductive member using the measured physical quantity related to the DC power in a correlation function between the wear amount of the conductive member and the physical quantity related to the DC power.

公开(公告)号：US20210265170A1

公开(公告)日：2021-08-26

申请号：US17179436

申请日：2021-02-19

Applicant: Tokyo Electron Limited

Inventor： Seiichi WATANABE ,  Kazuki NARISHIGE ,  Xinhe Jerry LIM ,  Jianfeng XU ,  Yi Hao NG ,  Zhenkang Max LIANG ,  Yujun Nicholas LOO ,  Chiew Wah YAP ,  Bin ZHAO ,  Chai Jin CHUA ,  Takehito WATANABE ,  Koji KAWAMURA ,  Kenji KOMATSU ,  Li JIN ,  Wee Teck TAN ,  Dali LIU

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/768 ,  H01J37/32

Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

公开(公告)号：US20200342357A1

公开(公告)日：2020-10-29

申请号：US16857384

申请日：2020-04-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki KATAOKA ,  Takehito WATANABE

IPC: G06N20/00 ,  G01J3/443

Abstract: There is provided a learning method. The method includes performing preprocessing on light emission data in a chamber of a plasma processing apparatus, setting a constraint for generating a regression equation representing a relationship between an etching rate of the plasma processing apparatus and the light emission data, selecting a learning target wavelength from the light emission data subjected to the preprocessing, and receiving selection of other sensor data different from the light emission data. The method further includes generating a regression equation based on the set constraint while using, as learning data, the selected wavelength, the received other sensor data, and the etching rate, and outputting the generated regression equation.