公开(公告)号：US20230377851A1

公开(公告)日：2023-11-23

申请号：US18319419

申请日：2023-05-17

Applicant: Tokyo Electron Limited

Inventor： Fumiya YOSHII ,  Kenji KOMATSU

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32449 ,  H01L21/31116 ,  H01J2237/334

Abstract: An etching method includes (a) providing a substrate on a substrate support in a chamber, the substrate including a first region having a multilayer film in which a silicon oxide film and a silicon nitride film are alternately stacked, a second region having a single-layer silicon oxide film, and a mask; (b) etching the substrate with a first plasma generated from a first process gas; and (c) etching the substrate with a second plasma generated from a second process gas different from the first process gas. The first process gas contains a Cv1Fw1 (v1 is an integer of 2 or more, and w1 is an integer of 1 or more) gas containing an unsaturated bond. The second process gas contains a Cx1Hy1Fz1 (x1 is an integer of 2 or more, and y1 and z1 are integers of 1 or more) gas containing an unsaturated bond.

公开(公告)号：US20240038501A1

公开(公告)日：2024-02-01

申请号：US18380066

申请日：2023-10-13

Applicant: Tokyo Electron Limited

Inventor： Akira NAKAGAWA ,  Kenji KOMATSU ,  Kazuma KAMIMURA ,  Tsukasa HIRAYAMA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32449 ,  H01L21/3065 ,  H01L21/67069 ,  H01J37/32357 ,  H01L21/6831 ,  H01J2237/334

Abstract: A substrate etching method performed by using a plasma processing apparatus includes: providing a substrate including a silicon-containing film to a substrate support; periodically supplying, to the substrate support, bias RF power of 20 kW to 50 kW at a duty ratio of 5% to 50%; and etching the silicon-containing film by plasma generated from a processing gas containing a fluorocarbon gas and an oxygen-containing gas

公开(公告)号：US20210265170A1

公开(公告)日：2021-08-26

申请号：US17179436

申请日：2021-02-19

Applicant: Tokyo Electron Limited

Inventor： Seiichi WATANABE ,  Kazuki NARISHIGE ,  Xinhe Jerry LIM ,  Jianfeng XU ,  Yi Hao NG ,  Zhenkang Max LIANG ,  Yujun Nicholas LOO ,  Chiew Wah YAP ,  Bin ZHAO ,  Chai Jin CHUA ,  Takehito WATANABE ,  Koji KAWAMURA ,  Kenji KOMATSU ,  Li JIN ,  Wee Teck TAN ,  Dali LIU

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/768 ,  H01J37/32

Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.