公开(公告)号：US10886138B2

公开(公告)日：2021-01-05

申请号：US16416424

申请日：2019-05-20

Applicant: Tokyo Electron Limited

Inventor： Timothy Tianshyun Yang ,  Shinya Morikita ,  Kiyohito Ito ,  Michiko Nakaya ,  Masanobu Honda

IPC: H01L21/311 ,  H01L21/02

Abstract: An etching shape can be suppressed from having non-uniform pattern. A substrate processing method includes burying an organic film in a recess surrounded by a silicon-containing film formed on a sidewall of a pattern of photoresist on a target film; and etching or sputtering the organic film and the silicon-containing film under a condition in which a selectivity thereof is about 1:1.

公开(公告)号：US20190355588A1

公开(公告)日：2019-11-21

申请号：US16416424

申请日：2019-05-20

Applicant: Tokyo Electron Limited

Inventor： Timothy Tianshyun Yang ,  Shinya Morikita ,  Kiyohito Ito ,  Michiko Nakaya ,  Masanobu Honda

IPC: H01L21/311 ,  H01L21/02

Abstract: An etching shape can be suppressed from having non-uniform pattern. A substrate processing method includes burying an organic film in a recess surrounded by a silicon-containing film formed on a sidewall of a pattern of photoresist on a target film; and etching or sputtering the organic film and the silicon-containing film under a condition in which a selectivity thereof is about 1:1.