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    Etching method and plasma processing apparatus
    2.
    发明授权
    Etching method and plasma processing apparatus 有权

    公开(公告)号：US11569094B2

    公开(公告)日：2023-01-31

    申请号：US17190651

    申请日：2021-03-03

    Applicant: Tokyo Electron Limited

    Inventor： Kota Ishiharada ,  Fumiya Takata ,  Toshikatsu Tobana ,  Shinya Morikita

    IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

    Abstract: An etching method includes: (a) providing, on a support, a substrate having the first region covering the second region and the second region defining a recess receiving the first region, (b) etching the first region until or immediately before the second region is exposed, (c) exposing the substrate to plasma generated from a first process gas containing C and F atoms using a first RF signal and forming a deposit on the substrate, (d) exposing the deposit to plasma generated from a second process gas containing an inert gas using a first RF signal and selectively etching the first region to the second region, and (e) repeating (c) and (d). (c) includes using the RF signal with a frequency of 60 to 300 MHz and/or setting the support to 100 to 200° C. to control a ratio of C to F atoms in the deposit to greater than 1.

    Plasma processing method
    3.
    发明授权
    Plasma processing method 有权

    公开(公告)号：US10192750B2

    公开(公告)日：2019-01-29

    申请号：US15605531

    申请日：2017-05-25

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shinya Morikita ,  Ryosuke Niitsuma ,  Weichien Chen

    IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/67 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/683

    Abstract: Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a processing container. The plasma processing method includes: etching the antireflective film using plasma generated in the processing container and the first mask to form a second mask from the antireflective film; etching the organic film using plasma generated in the processing container and the second mask to form a third mask from the organic film; generating plasma of a mixed gas including the first gas and the second gas in the processing container; and etching the etching target layer using plasma generated in the processing container and the third mask.

    Plasma processing method and plasma processing apparatus
    5.
    发明授权
    Plasma processing method and plasma processing apparatus 有权

    公开(公告)号：US10770268B2

    公开(公告)日：2020-09-08

    申请号：US15865841

    申请日：2018-01-09

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shinya Morikita ,  Takanori Banse ,  Takahisa Iwasaki ,  Ryosuke Niitsuma ,  Hiroki Taoka

    IPC: H01J37/32 ,  C23C16/44 ,  B08B7/00 ,  C23C16/455 ,  C23C16/26 ,  C23C16/505 ,  C23C16/40 ,  H01L21/67

    Abstract: In a plasma processing method, a carbon-containing film is formed on surfaces of components in a chamber by using a plasma of a carbon-containing gas, and a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film is formed on a surface of the carbon-containing film by a silicon-containing gas. Then, a target object is loaded into the chamber and processed by a plasma of a processing gas after the formation of the silicon-containing film. The silicon-containing film is removed from the surface of the carbon-containing film by using a plasma of a fluorine-containing gas after the target object processed by the plasma is unloaded from the chamber, and the carbon-containing film is removed from the surfaces of the components by using a plasma of an oxygen-containing gas.

    Pulsed capacitively coupled plasma processes
    7.
    发明授权
    Pulsed capacitively coupled plasma processes 有权

    公开(公告)号：US11545364B2

    公开(公告)日：2023-01-03

    申请号：US17001327

    申请日：2020-08-24

    Applicant: Tokyo Electron Limited

    Inventor： Peter Ventzek ,  Alok Ranjan ,  Kensuke Taniguchi ,  Shinya Morikita

    IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H05H1/46

    Abstract: A method includes performing a first on phase including applying an SP pulse to an SP electrode to generate plasma, performing a second on phase after the first on phase, performing a corner etch phase after the second on phase, and performing a by-product management phase after the corner etch phase. The SP pulse terminates at the end of the first on phase. The second on phase includes applying a first BP pulse to a BP electrode coupled to a target substrate. The first BP pulse includes a first BP power level and accelerates ions of the plasma toward to target substrate. The corner etch phase includes applying a BP spike including a second BP power level greater than the first BP power level. The duration of the BP spike is less than the duration of the first BP pulse.

    PULSED CAPACITIVELY COUPLED PLASMA PROCESSES
    8.
    发明申请
    PULSED CAPACITIVELY COUPLED PLASMA PROCESSES 有权

    公开(公告)号：US20220059358A1

    公开(公告)日：2022-02-24

    申请号：US17001327

    申请日：2020-08-24

    Applicant: Tokyo Electron Limited

    Inventor： Peter Ventzek ,  Alok Ranjan ,  Kensuke Taniguchi ,  Shinya Morikita

    IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H05H1/46

    Abstract: A method includes performing a first on phase including applying an SP pulse to an SP electrode to generate plasma, performing a second on phase after the first on phase, performing a corner etch phase after the second on phase, and performing a by-product management phase after the corner etch phase. The SP pulse terminates at the end of the first on phase. The second on phase includes applying a first BP pulse to a BP electrode coupled to a target substrate. The first BP pulse includes a first BP power level and accelerates ions of the plasma toward to target substrate. The corner etch phase includes applying a BP spike including a second BP power level greater than the first BP power level. The duration of the BP spike is less than the duration of the first BP pulse.

    Cleaning method and plasma processing apparatus
    10.
    发明授权
    Cleaning method and plasma processing apparatus 有权

    公开(公告)号：US10991551B2

    公开(公告)日：2021-04-27

    申请号：US16844449

    申请日：2020-04-09

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Mohd Fairuz Bin Budiman ,  Shinya Morikita ,  Toshifumi Nagaiwa

    IPC: H01J37/32 ,  H05H1/46

    Abstract: A cleaning method is provided. In the cleaning method, a cleaning gas is supplied into a processing chamber, a radio frequency (RF) power for plasma generation is applied to one of a first electrode on which a substrate is to be mounted and a second electrode disposed to be opposite to the first electrode in the processing chamber, and a negative voltage is applied to an edge ring disposed to surround the substrate. Further, plasma is generated from the cleaning gas and a cleaning process using the plasma is performed.

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