公开(公告)号：US20240222157A1

公开(公告)日：2024-07-04

申请号：US18608043

申请日：2024-03-18

Applicant: Tokyo Electron Limited

Inventor： Song yun Kang ,  Toshitake Tsuda ,  Kenji Sekiguchi ,  Syuhei Yonezawa ,  Koji Kagawa

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L21/6708 ,  H01L21/02087 ,  H01L21/02129 ,  H01L21/02343 ,  H01L21/30604 ,  H01L21/31144 ,  H01L21/67051

Abstract: A substrate processing method includes holding a substrate on which a boron-containing silicon film is formed; supplying an oxidative aqueous solution including hydrofluoric acid and nitric acid to the held substrate; and etching the boron-containing silicon film of the substrate with the oxidative aqueous solution.

公开(公告)号：US20210305066A1

公开(公告)日：2021-09-30

申请号：US17212225

申请日：2021-03-25

Applicant: Tokyo Electron Limited

Inventor： Song yun Kang ,  Toshitake Tsuda ,  Kenji Sekiguchi ,  Syuhei Yonezawa ,  Koji Kagawa

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

Abstract: A substrate processing method includes holding a substrate on which a boron-containing silicon film is formed; supplying an oxidative aqueous solution including hydrofluoric acid and nitric acid to the held substrate; and etching the boron-containing silicon film of the substrate with the oxidative aqueous solution.