公开(公告)号：US11865590B2

公开(公告)日：2024-01-09

申请号：US18048102

申请日：2022-10-20

Applicant: Tokyo Electron Limited

Inventor： Kyoko Ikeda ,  Kazuya Dobashi ,  Tsunenaga Nakashima ,  Kenji Sekiguchi ,  Shuuichi Nishikido ,  Masato Nakajo ,  Takahiro Yasutake

IPC: B08B5/02 ,  H01L21/02

CPC classification number: B08B5/02 ,  H01L21/02041

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

公开(公告)号：US11504751B2

公开(公告)日：2022-11-22

申请号：US17295971

申请日：2019-11-20

Applicant: Tokyo Electron Limited

Inventor： Kyoko Ikeda ,  Kazuya Dobashi ,  Tsunenaga Nakashima ,  Kenji Sekiguchi ,  Shuuichi Nishikido ,  Masato Nakajo ,  Takahiro Yasutake

IPC: H01L21/02 ,  B08B5/02

Abstract: A substrate processing device includes a processing container; a substrate holder configured to hold a substrate arranged within the processing container; a gas nozzle configured to spray gas within the processing container; a controller configured to control collision of the gas with the substrate held by the substrate holder. The controller is configured to remove particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

公开(公告)号：US11211281B2

公开(公告)日：2021-12-28

申请号：US16707051

申请日：2019-12-09

Applicant: Tokyo Electron Limited

Inventor： Kenji Sekiguchi

IPC: H01L21/68 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  H01L21/306

Abstract: A substrate processing apparatus includes a placing unit, a supply, an embankment and a moving mechanism. The placing unit is configured to place a substrate thereon. The supply is configured to supply a processing liquid onto the substrate placed on the placing unit. The embankment is disposed to surround the substrate placed on the placing unit to suppress an outflow of the processing liquid supplied onto the substrate from the substrate. The moving mechanism is configured to vary a height of the embankment.

公开(公告)号：US10734255B2

公开(公告)日：2020-08-04

申请号：US15599067

申请日：2017-05-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji Sekiguchi ,  Itaru Kanno ,  Meitoku Aibara ,  Kouzou Tachibana

IPC: H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  B08B3/04

Abstract: A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.

公开(公告)号：US20190355574A1

公开(公告)日：2019-11-21

申请号：US16411404

申请日：2019-05-14

Applicant: Tokyo Electron Limited

Inventor： Itaru Kanno ,  Hiromi Kiyose ,  Gentaro Goshi ,  Naohiko Hamamura ,  Takuro Masuzumi ,  Kenji Sekiguchi ,  Satoru Tanaka ,  Teruomi Minami

IPC: H01L21/02 ,  H01L21/67 ,  F26B3/28

Abstract: A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

公开(公告)号：US20240222157A1

公开(公告)日：2024-07-04

申请号：US18608043

申请日：2024-03-18

Applicant: Tokyo Electron Limited

Inventor： Song yun Kang ,  Toshitake Tsuda ,  Kenji Sekiguchi ,  Syuhei Yonezawa ,  Koji Kagawa

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L21/6708 ,  H01L21/02087 ,  H01L21/02129 ,  H01L21/02343 ,  H01L21/30604 ,  H01L21/31144 ,  H01L21/67051

Abstract: A substrate processing method includes holding a substrate on which a boron-containing silicon film is formed; supplying an oxidative aqueous solution including hydrofluoric acid and nitric acid to the held substrate; and etching the boron-containing silicon film of the substrate with the oxidative aqueous solution.

公开(公告)号：US11201050B2

公开(公告)日：2021-12-14

申请号：US16411404

申请日：2019-05-14

Applicant: Tokyo Electron Limited

Inventor： Itaru Kanno ,  Hiromi Kiyose ,  Gentaro Goshi ,  Naohiko Hamamura ,  Takuro Masuzumi ,  Kenji Sekiguchi ,  Satoru Tanaka ,  Teruomi Minami

IPC: F26B3/34 ,  H01L21/02 ,  F26B3/28 ,  H01L21/67

Abstract: A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

公开(公告)号：US20200219730A1

公开(公告)日：2020-07-09

申请号：US16736964

申请日：2020-01-08

Applicant: Tokyo Electron Limited

Inventor： Koukichi Hiroshiro ,  Rintaro Higuchi ,  Koji Kagawa ,  Kenji Sekiguchi

IPC: H01L21/306 ,  H01L21/67

Abstract: A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.

公开(公告)号：US12203021B2

公开(公告)日：2025-01-21

申请号：US17654640

申请日：2022-03-14

Applicant: Tokyo Electron Limited

Inventor： Koukichi Hiroshiro ,  Tetsuya Sakazaki ,  Koji Kagawa ,  Kenji Sekiguchi ,  Kazuyoshi Mizumoto

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

公开(公告)号：US11538679B2

公开(公告)日：2022-12-27

申请号：US16334430

申请日：2017-09-08

Applicant: Tokyo Electron Limited

Inventor： Yuji Katagiri ,  Kenji Sekiguchi

IPC: H01L21/02 ,  H01L21/67

Abstract: A substrate processing method according to an embodiment includes a processing liquid supply step and an UV irradiation step. In the processing liquid supply step, a processing liquid is supplied to a substrate. In the UV irradiation step, the substrate after the processing liquid supply step is irradiated with ultraviolet rays having a wavelength of 200 nm or less, so that the substrate after the processing liquid supply step is destaticized.