Substrate processing system and transfer method

    公开(公告)号:US12165893B2

    公开(公告)日:2024-12-10

    申请号:US18182716

    申请日:2023-03-13

    Abstract: A substrate processing system includes a vacuum transfer module; a plasma process module; a transfer robot in the vacuum transfer module; a stage in the plasma process module; a first ring disposed on the stage and a second ring disposed on the first ring to surround a substrate that is placed on the stage, the second ring having an inner diameter smaller than an inner diameter of the first ring; actuators to move support pins vertically to raise the first and the second rings and a transfer jig; and a controller configured to selectively execute a simultaneous transfer mode in which the transfer robot is caused to simultaneously transfer the first ring and the second ring and a sole transfer mode in which the transfer robot is caused to transfer only the second ring.

    Mounting table and plasma processing apparatus

    公开(公告)号:US10714370B2

    公开(公告)日:2020-07-14

    申请号:US14191953

    申请日:2014-02-27

    Abstract: A mounting table includes a base and an electrostatic chuck provided on the base. The base has first and second top surface on which the electrostatic chuck and a focus ring are respectively provided. The second top surface is provided below the first top surface. A coolant path in the base has central and peripheral paths extending below the first and second top surfaces, respectively. The peripheral path has a portion extending along a side surface toward the first top surface. The mounting surface has central and peripheral regions. The mounting surface has protrusions formed in a dot shape. The protrusions are formed such that a contact area between the protrusions of the peripheral region and the backside of an object per unit area becomes greater than a contact area between the protrusions of the central region and the backside of the object per unit area.

    Substrate temperature adjusting method and a method of changing the temperature control range of a heater in a substrate processing apparatus
    5.
    发明授权
    Substrate temperature adjusting method and a method of changing the temperature control range of a heater in a substrate processing apparatus 有权
    基板温度调节方法和改变基板处理装置中的加热器的温度控制范围的方法

    公开(公告)号:US09410753B2

    公开(公告)日:2016-08-09

    申请号:US13772467

    申请日:2013-02-21

    CPC classification number: F28F27/02 H01L21/67109

    Abstract: A method which changes the temperature control range of a heater of a substrate processing apparatus. The temperature control range of a heater is changed or extended by changing the flow rate of the coolant flowing through a coolant channel from a first flow rate to a second flow rate which is smaller than the first flow rate, to change a first thermal conductivity of a mounting table to a second thermal conductivity which is smaller than the first thermal conductivity. The upper limit of the temperature control range is lower than the heat resistant temperature of a material of an adhesive of the mounting table.

    Abstract translation: 改变基板处理装置的加热器的温度控制范围的方法。 通过将流过冷却剂通道的冷却剂的流量从第一流量改变为小于第一流量的第二流量来改变或延长加热器的温度控制范围,以改变第一热传导率 第二导热系数小于第一导热系数的安装台。 温度控制范围的上限低于安装台的粘合剂的材料的耐热温度。

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