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1.发明授权公开(公告)号：US11862506B2
公开(公告)日：2024-01-02
申请号：US17195163
申请日：2021-03-08
发明人： Norihiko Amikura , Masatomo Kita
IPC分类号： H01L21/683 , H01L21/677 , H01L21/67 , H01L21/687
CPC分类号： H01L21/6838 , H01L21/67201 , H01L21/67742 , H01L21/68707
摘要： A substrate processing system includes a substrate processing module, an atmospheric substrate transfer module, a first and a second vacuum substrate transfer module, a load lock module, and a vacuum substrate transfer robot. The first vacuum substrate transfer module having a first transfer space is disposed adjacent to the atmospheric substrate transfer module and the substrate processing module. The second vacuum substrate transfer module, having a second transfer space in communication with the first transfer space and external dimensions smaller than those of the first vacuum substrate transfer module in a plan view, is disposed on or under the first vacuum substrate transfer module. The load lock module is disposed between the atmospheric substrate transfer module and the second vacuum substrate transfer module. The vacuum substrate transfer robot is disposed in the first transfer space or the second transfer space to transfer a substrate.
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公开(公告)号：US11326914B2
公开(公告)日：2022-05-10
申请号：US16645898
申请日：2019-05-27
发明人： Norihiko Amikura , Risako Matsuda , Kazuyuki Miura
IPC分类号： G01F1/50
摘要： The flow rate measurement method includes: measuring a first pressure of a gas filled in a first flow path connected to a flow rate controller and a second flow path connected to the first flow path; supplying a gas to the first and second flow paths via the flow rate controller and measuring a second pressure and a temperature of the gas filled in the first and second flow paths; after the gas is exhausted from the second flow path, measuring a third pressure of the gas filled in the second flow path; measuring a fourth pressure of the gas filled in the first and second flow paths; and calculating an amount of the gas supplied to the first and second flow paths via the flow rate controller, based on the first, second, third, and fourth pressures and the temperature.
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公开(公告)号：US10788356B2
公开(公告)日：2020-09-29
申请号：US15702824
申请日：2017-09-13
发明人： Norihiko Amikura , Risako Miyoshi
摘要： A method according to an aspect includes a first step of connecting a reference device to the other end of a connecting pipe, a second step of supplying a gas from one flow controller into piping, a third step of acquiring measured values of a first pressure gauge and a first thermometer, a fourth step of supplying a portion of the gas in piping into a tank, a fifth step of acquiring measured values of the first pressure gauge and the first thermometer or measured values of a second pressure gauge and a second thermometer, and a sixth step of using a Boyle-Charles' law to calculate a volume of the piping on the basis of the measured values acquired in the third step, the measured values acquired in the fifth step, and a volume of a closed space including a space in the tank when the third valve is closed.
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公开(公告)号：US10168049B2
公开(公告)日：2019-01-01
申请号：US14699102
申请日：2015-04-29
摘要： Disclosed is a plasma processing apparatus in which a main control unit is capable of managing the processing situation of an exhaust gas in an exhaust gas processing unit through a dilution controller. The exhaust gas processing unit includes a detoxifying device connected to the outlet of a vacuum pump through an exhaust pipe, a dilution gas source connected to the exhaust pipe near the outlet of the vacuum pump through a dilution gas supply pipe, an MFC and an opening/closing valve installed at the middle of the dilution gas supply pipe, a gas sensor attached to the exhaust pipe on the downstream side of an end (node N) of the dilution gas supply pipe, and a dilution controller configured to control the MFC.
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公开(公告)号：US09240307B2
公开(公告)日：2016-01-19
申请号：US14161893
申请日：2014-01-23
发明人： Norihiko Amikura , Risako Miyoshi
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32091
摘要： Disclosed is a plasma processing apparatus including a mounting table within a processing container. The mounting table includes a lower electrode. A shower head constituting an upper electrode is provided above the mounting table. A gas inlet tube is provided above the shower head. The shower head includes a plurality of downwardly opened gas ejection holes, and first and second separate gas diffusion chambers on the gas ejection holes. The first gas diffusion chamber extends along a central axis that passes through a center of the mounting table. The second gas diffusion chamber extends circumferentially around the first gas diffusion chamber. The gas inlet tube includes a cylindrical first tube wall and a cylindrical second tube wall provided outside the first tube wall, and defines a first gas inlet path inside the first tube wall, and a second gas inlet path between the first and second tube walls.
摘要翻译： 公开了一种等离子体处理装置，其包括处理容器内的安装台。 安装台包括下电极。 构成上电极的花洒头设置在安装台的上方。 在淋浴喷头上方设有进气管。 喷淋头包括多个向下打开的气体喷射孔，以及气体喷射孔上的第一和第二分离的气体扩散室。 第一气体扩散室沿着穿过安装台的中心的中心轴线延伸。 第二气体扩散室围绕第一气体扩散室周向延伸。 气体入口管包括圆柱形第一管壁和设置在第一管壁外侧的圆柱形第二管壁，并且限定第一管壁内部的第一气体入口路径和在第一和第二管壁之间的第二气体入口路径。
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公开(公告)号：US20240047254A1
公开(公告)日：2024-02-08
申请号：US18139878
申请日：2023-04-26
IPC分类号： H01L21/677 , H01L21/67 , H01L21/68 , B65G47/90 , H01L21/687
CPC分类号： H01L21/67766 , H01L21/67184 , H01L21/67196 , H01L21/67017 , H01L21/681 , B65G47/90 , H01L21/68707 , H01L21/67126
摘要： A substrate transfer system includes a load lock module, an atmospheric transfer module having a first sidewall adjacent to the load lock module and a second sidewall remote from the load lock module, the atmospheric transfer module being connected to the load lock module, and a substrate transfer robot disposed in the atmospheric transfer module. The substrate transfer robot includes a base configured to reciprocate along the first sidewall, a substrate transfer arm disposed on the base, and a flow rectifier surrounding the base, the flow rectifier being configured, upon movement of the base, to create an obliquely downward air flow in a direction opposite to a moving direction of the base.
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7.发明授权公开(公告)号：US11585717B2
公开(公告)日：2023-02-21
申请号：US16806628
申请日：2020-03-02
发明人： Risako Matsuda , Norihiko Amikura , Kazuyuki Miura , Keita Shouji
摘要： In a substrate processing system according to an exemplary embodiment, gas supply units are configured to supply gases to chambers through first gas flow channels thereof, respectively. Chamber pressure sensors are configured to measure pressures in the chambers. A second gas flow channel is connected to the first gas flow channel of each of the gas supply units. A reference pressure sensor is configured to measure a pressure in the second gas flow channel. In a method according to an exemplary embodiment, each of the chamber pressure sensors is calibrated by using a measurement value thereof and a measurement value of the reference pressure sensor which are obtained in a state where pressures in a corresponding chamber, the first gas flow channel of a corresponding gas supply unit, and the second gas flow channel are maintained.
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8.发明授权公开(公告)号：US11231313B2
公开(公告)日：2022-01-25
申请号：US15954973
申请日：2018-04-17
发明人： Norihiko Amikura , Risako Miyoshi
摘要： A method of obtaining the output flow rate of the flow rate controller according to an aspect is provided. The method including a first step of outputting gas whose flow rate is adjusted according to a designated set flow rate from the flow rate controller, in a state where the diaphragm mechanism is opened; a second step of adjusting the diaphragm mechanism so that the pressure in the second pipe is the target pressure value, in a state where the output of gas from the flow rate controller is continued in the first step; and a third step of obtaining the output flow rate of the flow rate controller by using a pressure value and a temperature value in the tank, after the pressure in the second pipe is set to the target pressure value in the second step.
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公开(公告)号：US10996688B2
公开(公告)日：2021-05-04
申请号：US16180047
申请日：2018-11-05
发明人： Atsushi Sawachi , Norihiko Amikura
摘要： A gas supply system according to the present disclosure includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes. The gas supply system also includes a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes. The gas supply system further includes a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.
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公开(公告)号：US10274972B2
公开(公告)日：2019-04-30
申请号：US15263490
申请日：2016-09-13
发明人： Norihiko Amikura , Risako Miyoshi
摘要： A flow rate of a gas supplied into a processing vessel of a substrate processing apparatus is controlled according to a set flow rate of a first flow rate controller. The gas is also supplied into a second flow rate controller. When an output flow rate of the first flow rate controller is in a steady state, a first pressure measurement value of a first pressure gauge and a second pressure measurement value of a second pressure gauge of the second flow rate controller are obtained. A difference absolute value between the first pressure measurement value and a reference pressure value and a difference absolute value between the second pressure measurement value and a reference pressure value are calculated, and then, an average value of the difference absolute values is calculated. The difference absolute values and the average value are respectively compared with a first to third threshold value.
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