公开(公告)号：US20190198390A1

公开(公告)日：2019-06-27

申请号：US15850458

申请日：2017-12-21

Applicant: Tokyo Electron Limited

Inventor： Takeshi ITATANI ,  Tadahiro ISHIZAKA ,  Kandabara TAPILY ,  Kai-Hung YU ,  Wanjae PARK

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/687 ,  H01L21/02

Abstract: A removal method is provided for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber. The removal method includes repeatedly performing process steps of exposing the plurality of types of metal oxide films to BCl3 gas or a BCl3 gas plasma generated by introducing BCl3 gas, stopping introduction of the BCl3 gas and performing a purge process, exposing the plurality of types of metal oxide films and/or a plurality of types of metal films underneath the metal oxide films to one or more different plasmas, at least one of which is generated by introducing a single gas of an inert gas, and stopping introduction of the inert gas and performing the purge process.