公开(公告)号：US20180179627A1

公开(公告)日：2018-06-28

申请号：US15847980

申请日：2017-12-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideaki YAMASAKI ,  Takeshi ITATANI

IPC: C23C16/44 ,  H01L21/673 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/4408 ,  C23C16/4586 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67386 ,  H01L21/67393 ,  H01L21/68742 ,  H01L21/68792

Abstract: A purging method for purging an interior of a processing container of a substrate processing apparatus after a film forming process is executed on a wafer in the processing container, includes a first process of pressurizing a first gas in a first line of the substrate processing apparatus and then discharging the first gas into the processing container, and a second process of supplying a second gas into the processing container. The second process is executed after execution of the first process, the first gas includes an inert gas, and the second gas includes a hydrogen gas, a nitrogen-containing gas, a rare gas or a combination of these gases.

公开(公告)号：US20190218662A1

公开(公告)日：2019-07-18

申请号：US16245863

申请日：2019-01-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takeshi ITATANI ,  Hideaki YAMASAKI

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/34 ,  H01L21/02 ,  H01L21/285 ,  H01J37/32

CPC classification number: C23C16/4404 ,  C23C16/34 ,  C23C16/455 ,  C23C16/4581 ,  H01J37/3244 ,  H01L21/02186 ,  H01L21/02274 ,  H01L21/28556

Abstract: A method of pre-coating an inner surface of a chamber, which includes a surface of a substrate-supporting support base installed in an internal space in the chamber, includes: forming a first film on the inner surface by supplying a first gas; forming a second film on the first film by supplying a second gas; and forming a third film on the second film by supplying a third gas, wherein a flow rate ratio of a hydrogen-containing gas to a metal source gas in the first gas is set to be higher than flow rate ratios of the hydrogen-containing gas to the metal source gas in the second gas and the third gas, and wherein the flow rate of the metal source gas in the first gas is set to be lower than the flow rates of the metal source gas in the second gas and the third gas.

公开(公告)号：US20190301947A1

公开(公告)日：2019-10-03

申请号：US16371739

申请日：2019-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideaki YAMASAKI ,  Takashi MOCHIZUKI ,  Takeshi ITATANI

IPC: G01K7/02 ,  G01K1/14

Abstract: There is provided a thermocouple-fixing jig for fixing a thermocouple to a linear heater, the thermocouple-fixing jig comprising a first member and a second member configured to hold the linear heater therebetween, wherein the second member comprises a first holding portion and a second holding portion that hold a temperature detection part of the thermocouple.

公开(公告)号：US20190198390A1

公开(公告)日：2019-06-27

申请号：US15850458

申请日：2017-12-21

Applicant: Tokyo Electron Limited

Inventor： Takeshi ITATANI ,  Tadahiro ISHIZAKA ,  Kandabara TAPILY ,  Kai-Hung YU ,  Wanjae PARK

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/687 ,  H01L21/02

Abstract: A removal method is provided for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber. The removal method includes repeatedly performing process steps of exposing the plurality of types of metal oxide films to BCl3 gas or a BCl3 gas plasma generated by introducing BCl3 gas, stopping introduction of the BCl3 gas and performing a purge process, exposing the plurality of types of metal oxide films and/or a plurality of types of metal films underneath the metal oxide films to one or more different plasmas, at least one of which is generated by introducing a single gas of an inert gas, and stopping introduction of the inert gas and performing the purge process.

公开(公告)号：US20230096191A1

公开(公告)日：2023-03-30

申请号：US17947545

申请日：2022-09-19

Applicant: Tokyo Electron Limited

Inventor： Takeshi ITATANI ,  Einosuke TSUDA ,  Tadahiro ISHIZAKA ,  Satoshi TAKEDA

IPC: H01L21/285 ,  C23C16/16 ,  C23C16/54

Abstract: A method of forming a ruthenium film on a substrate by supplying a ruthenium-containing gas includes: forming an adsorption inhibition layer that inhibits adsorption of the ruthenium-containing gas by supplying an adsorption inhibition gas to an end portion and a rear surface of the substrate; transferring the substrate to a chamber; and forming the ruthenium film on the substrate by supplying the ruthenium-containing gas to the chamber.

公开(公告)号：US20170204518A1

公开(公告)日：2017-07-20

申请号：US15405818

申请日：2017-01-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideaki YAMASAKI ,  Shinya OKABE ,  Takeshi ITATANI

IPC: C23C16/44 ,  H01L21/02 ,  C23C16/455

Abstract: A vacuum processing apparatus for processing a substrate under a vacuum atmosphere includes a vacuum processing module, a vacuum transfer module, a gate valve and a control unit. The vacuum processing module includes a processing chamber, a mounting table and a first gas supply unit. The vacuum transfer module includes a transfer chamber airtightly connected to the processing chamber through the transfer port, a transfer unit and a second gas supply unit. The gate valve is configured to open and close the transfer port for the substrate. The control unit is configured to open the gate valve in a state where a flow rate of an inert gas supplied from the first gas supply unit is smaller than a flow rate of an inert gas supplied from the second gas supply unit and a pressure in the processing chamber is lower than a pressure in the transfer chamber.