公开(公告)号：US20200027688A1

公开(公告)日：2020-01-23

申请号：US16039446

申请日：2018-07-19

Applicant: Tokyo Electron Limited

Inventor： Shinji KUBOTA ,  Naohiko OKUNISHI ,  Yosuke TAMURO ,  Shota KANEKO

IPC: H01J37/06 ,  H01J37/32 ,  H01J3/02

Abstract: A substrate processing apparatus includes a chamber, a pedestal provided in the chamber and having a substrate holding region to hold a substrate thereon, and a gas supply part to supply a gas into the chamber. A plurality of electron gun arrays two-dimensionally arranged so as to cover the substrate holding region is provided and configured to emit electrons toward the gas to cause interactions between the emitted electrons and the gas. A plurality of electron energy control parts is correspondingly provided at each of the electron gun arrays and configured to control energy of the electrons emitted from each of the electron gun arrays independently of each other.

公开(公告)号：US20210313151A1

公开(公告)日：2021-10-07

申请号：US17220982

申请日：2021-04-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi TOHARA ,  Naokazu FURUYA ,  Yosuke TAMURO ,  Yuzuru SAKAI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber accommodating a plurality of substrates; a plurality of substrate supports provided inside the chamber and configured to support a substrate; a plurality of radio-frequency power sources provided corresponding to the plurality of substrate supports, and configured to supply radio-frequency power to the plurality of substrate supports, respectively; and a plurality of shields configured to compart the inside of the chamber and provided corresponding to the plurality of substrate supports to define a processing space where plasma is generated. A radio-frequency current path is formed between the plurality of shields so as not to interfere with one another.