PLASMA PROCESSING APPARATUS
    1.
    发明申请

    公开(公告)号:US20230057937A1

    公开(公告)日:2023-02-23

    申请号:US17981265

    申请日:2022-11-04

    Abstract: A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

    PLASMA PROCESSING APPARATUS
    2.
    发明申请

    公开(公告)号:US20190096639A1

    公开(公告)日:2019-03-28

    申请号:US16140948

    申请日:2018-09-25

    Abstract: A plasma processing apparatus includes a stage including a lower electrode in an inner space of a chamber main body. An upper electrode is provided above the stage. A first radio frequency power supply is electrically connected to the upper electrode through a power feed conductor. A second radio frequency power supply is electrically connected to a lower electrode. A ground conductor extends above the chamber main body to cover the upper electrode. The ground conductor provides an external space at the outside thereof on the side of the inner space. the third portion, the external space being provided on the second portion and above the inner space. The external space is spaced upward from the upper electrode and is shielded from the upper electrode by the ground conductor. An electromagnet is disposed in the external space.

    PLASMA PROCESSING METHOD
    3.
    发明申请

    公开(公告)号:US20190096635A1

    公开(公告)日:2019-03-28

    申请号:US16141225

    申请日:2018-09-25

    Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.

    PLASMA PROCESSING APPARATUS
    4.
    发明申请

    公开(公告)号:US20190027344A1

    公开(公告)日:2019-01-24

    申请号:US16037461

    申请日:2018-07-17

    Abstract: A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

    METHOD FOR DESIGNING FILTER
    6.
    发明申请

    公开(公告)号:US20170373659A1

    公开(公告)日:2017-12-28

    申请号:US15627592

    申请日:2017-06-20

    CPC classification number: H03H7/0115 G06F17/5063

    Abstract: A method is provided to design a filter. In the method, a difference between a high frequency to be blocked and a resonance frequency of a distributed constant type reference filter is obtained, the reference filter including a reference coil having windings wound at a plurality of pitches having the same length in an axial direction and a capacitor connected in parallel to the reference coil. When the difference is greater than the predetermined value, a split position in the reference coil where the reference coil is divided into a first coil element and a second coil element connected in series and a split distance between the first coil element and the second coil element to reduce the first difference.

    PLASMA PROCESSING APPARATUS
    7.
    发明申请
    PLASMA PROCESSING APPARATUS 有权
    等离子体加工设备

    公开(公告)号:US20160126067A1

    公开(公告)日:2016-05-05

    申请号:US14785471

    申请日:2014-05-14

    Inventor: Naohiko OKUNISHI

    Abstract: A resonance frequency is adjusted or optimized by shifting the resonance frequency without reducing an impedance function or a withstand voltage characteristic against a high frequency noise, when blocking, by using a multiple parallel resonance characteristic of a distributed constant line, the high frequency noise introduced into a line such as a power feed line or a signal line from an electrical member other than a high frequency electrode within a processing vessel. Regarding winding pitches, each of the solenoid coils 104(1) and 104(2) is divided to multiple sections K1, K2, . . . in a coil axis direction, and, a winding pitch pi in each section Ki (i=1, 2, . . . ) is set independently. Comb teeth M inserted into winding gaps of both solenoid coils 104(1) and 104(2) are formed on inner surfaces of multiple rod-shaped comb-teeth member 114 provided adjacent to the solenoid coils 104(1) and 104(2).

    Abstract translation: 通过移动谐振频率来调节或优化谐振频率,而不会通过使用分布常数线路的多个并联谐振特性,降低引入到高频噪声中的高频噪声来阻断高频噪声的阻抗函数或耐压特性 来自处理容器内的来自除了高频电极之外的电气部件的馈电线或信号线的线。 关于绕组间距,每个电磁线圈104(1)和104(2)被分成多个部分K1,K2。 。 。 在线圈轴方向上,并且各个部分Ki(i = 1,2,...)中的卷绕间距p i被独立地设定。 插入到螺线管线圈104(1)和104(2)的绕组间隙中的梳齿M形成在与螺线管线圈104(1)和104(2)相邻设置的多个杆形梳齿构件114的内表面上, 。

    PLASMA PROCESSING APPARATUS AND FILTER UNIT
    8.
    发明申请
    PLASMA PROCESSING APPARATUS AND FILTER UNIT 有权
    等离子体加工设备和过滤器单元

    公开(公告)号:US20160079038A1

    公开(公告)日:2016-03-17

    申请号:US14786590

    申请日:2014-05-19

    Inventor: Naohiko OKUNISHI

    Abstract: A filter unit 54(IN) includes a housing 82 formed of a cylindrical conductor. Further, in the housing 82, the air-core solenoid coils AL1 and BL1; the first capacitors AC1 and BC1; the troidal coils AL2 and BL2; and the second capacitors AC2 and BC2 are arranged in this sequence from top to bottom. In the vicinity of the air-core solenoid coils AL1 and BL1, a multiple number of rod-shaped comb-teeth members 86, which are extended in parallel to a coil axis direction, are provided adjacent to outer peripheries of the air-core solenoid coils AL1 and BL1 at a regular interval in a circumferential direction thereof. A comb teeth M are formed on an inner surface of each comb-teeth member 86, and the comb teeth M are inserted into winding gaps of the air-core solenoid coils AL1 and BL1.

    Abstract translation: 过滤器单元54(IN)包括由圆柱形导体形成的壳体82。 此外,在壳体82中,空芯电磁线圈AL1和BL1; 第一电容器AC1和BC1; 铁氧体线圈AL2和BL2; 并且第二电容器AC2和BC2以从上到下的顺序排列。 在空心电磁线圈AL1和BL1附近,与空心螺线管的外周相邻地设置有多个与线圈轴线方向平行延伸的杆状梳齿构件86, 线圈AL1和BL1在其圆周方向上以规则的间隔。 在每个梳齿构件86的内表面上形成梳齿M,并且梳齿M插入到空心电磁线圈AL1和BL1的绕组间隙中。

    STAGE AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20210104386A1

    公开(公告)日:2021-04-08

    申请号:US17127607

    申请日:2020-12-18

    Abstract: A stage according to an exemplary embodiment has an electrostatic chuck. The electrostatic chuck has a base and a chuck main body. The chuck main body is provided on the base and configured to hold a substrate with electrostatic attractive force. The chuck main body has a plurality of first heaters and a plurality of second heaters. The number of second heaters is larger than the number of first heaters. The first heater controller drives the plurality of first heaters by an alternating current output or a direct current output from a first power source. The second heater controller drives the plurality of second heaters by an alternating current output or a direct current output from a second power source which has electric power lower than electric power of the output from the first power source.

    SUBSTRATE PROCESSING APPARATUS
    10.
    发明申请

    公开(公告)号:US20200027688A1

    公开(公告)日:2020-01-23

    申请号:US16039446

    申请日:2018-07-19

    Abstract: A substrate processing apparatus includes a chamber, a pedestal provided in the chamber and having a substrate holding region to hold a substrate thereon, and a gas supply part to supply a gas into the chamber. A plurality of electron gun arrays two-dimensionally arranged so as to cover the substrate holding region is provided and configured to emit electrons toward the gas to cause interactions between the emitted electrons and the gas. A plurality of electron energy control parts is correspondingly provided at each of the electron gun arrays and configured to control energy of the electrons emitted from each of the electron gun arrays independently of each other.

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