公开(公告)号：US20210143033A1

公开(公告)日：2021-05-13

申请号：US17084934

申请日：2020-10-30

Applicant: Tokyo Electron Limited

Inventor： Shota KANEKO ,  Shigemi OONO ,  Norihide SAGARA

IPC: H01L21/67 ,  G05B19/406 ,  H04N7/18

Abstract: A monitoring system for a sealing apparatus, the sealing apparatus configured to seal a substrate treatment apparatus by a housing and fill a space sealed by the housing with a predetermined gas atmosphere, the monitoring system includes: a laser sensor for a region, which a person can enter in a space between the housing and the substrate treatment apparatus, as a detection region; and a controller configured to output a control signal to the substrate treatment apparatus or the sealing apparatus based on a detection result by the laser sensor or output a notification signal based on the detection result.

公开(公告)号：US20200027688A1

公开(公告)日：2020-01-23

申请号：US16039446

申请日：2018-07-19

Applicant: Tokyo Electron Limited

Inventor： Shinji KUBOTA ,  Naohiko OKUNISHI ,  Yosuke TAMURO ,  Shota KANEKO

IPC: H01J37/06 ,  H01J37/32 ,  H01J3/02

Abstract: A substrate processing apparatus includes a chamber, a pedestal provided in the chamber and having a substrate holding region to hold a substrate thereon, and a gas supply part to supply a gas into the chamber. A plurality of electron gun arrays two-dimensionally arranged so as to cover the substrate holding region is provided and configured to emit electrons toward the gas to cause interactions between the emitted electrons and the gas. A plurality of electron energy control parts is correspondingly provided at each of the electron gun arrays and configured to control energy of the electrons emitted from each of the electron gun arrays independently of each other.

公开(公告)号：US20210366697A1

公开(公告)日：2021-11-25

申请号：US16646277

申请日：2019-05-10

Applicant: Tokyo Electron Limited

Inventor： Michishige SAITO ,  Kazuya NAGASEKI ,  Shota KANEKO

IPC: H01J37/32

Abstract: A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.