公开(公告)号：US20150211119A1

公开(公告)日：2015-07-30

申请号：US14604827

申请日：2015-01-26

Applicant: Tokyo Electron Limited

Inventor： Yuji ONO ,  Mitsuhiro TACHIBANA ,  Manabu HONMA

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/45565 ,  C23C16/402 ,  C23C16/4405 ,  C23C16/45551

Abstract: A film deposition apparatus includes a vacuum chamber, and a turntable having a substrate receiving area provided in the vacuum chamber. A heating unit is provided to heat the turntable so as to heat the substrate up to 600 degrees C. or higher. A process gas supply part is provided to supply a process gas having a decomposition temperature of 520 degrees C. or lower under 1 atmospheric pressure or lower, to the substrate. A gas shower head is provided in the process gas supply part and has a plurality of gas discharge holes provided in an opposed part facing a passing area of the substrate placed on the turntable. A cooling mechanism is provided in the process gas supply part and is configured to cool the opposed part in the gas shower head up to a temperature lower than the decomposition temperature of the process gas.

Abstract translation: 薄膜沉积设备包括真空室和设置在真空室中的具有基板接收区域的转台。 提供加热单元以加热转台以将基底加热至600摄氏度或更高。 提供了一种工艺气体供应部件，其将分解温度为520℃以下的处理气体提供给基板。 在处理气体供给部分设置有气体喷头，并且具有多个气体排出孔，该多个气体排出孔设置在面对放置在转台上的基板的通过区域的相对部分中。 在处理气体供给部中设置有冷却机构，并且将该气体喷淋头的对置部冷却至低于处理气体的分解温度的温度。