公开(公告)号：US20170032990A1

公开(公告)日：2017-02-02

申请号：US15219096

申请日：2016-07-25

Applicant: Tokyo Electron Limited ,  CENTRAL GLASS CO., LTD.

Inventor： Jun LIN ,  Koji TAKEYA ,  Mitsuhiro TACHIBANA ,  Akifumi YAO ,  Kunihiro YAMAUCHI ,  Tatsuo MIYAZAKI

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  C23F1/12 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136 ,  H01L23/53209 ,  H01L2924/01027 ,  H05K3/02 ,  H05K2203/0315

Abstract: An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing β-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.

Abstract translation: 蚀刻方法包括通过向目标物体供给含有β-二酮的蚀刻气体和氧化钴膜的氧化气体来蚀刻在目标物体的表面上形成的钴膜的工序。 执行蚀刻气体和氧化气体的供给，使得氧化气体与蚀刻气体的流量比在0.5％至50％的范围内，同时将目标物体加热到低于或等于250°的温度 C。

公开(公告)号：US20230014819A1

公开(公告)日：2023-01-19

申请号：US17756979

申请日：2020-10-28

Applicant: Tokyo Electron Limited

Inventor： Satoshi TODA ,  Naoki SHINDO ,  Mitsuhiro TACHIBANA ,  Haruna SUZUKI ,  Gen YOU

IPC: H01L21/3213 ,  H01L21/67

Abstract: An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.

公开(公告)号：US20180211844A1

公开(公告)日：2018-07-26

申请号：US15744401

申请日：2016-06-07

Applicant: TOKYO ELECTRON LIMITED ,  CENTRAL GLASS CO., LTD.

Inventor： Jun LIN ,  Koji TAKEYA ,  Shinichi KAWAGUCHI ,  Mitsuhiro TACHIBANA ,  Akifumi YAO ,  Kunihiro YAMAUCHI

IPC: H01L21/302 ,  H01L21/02

CPC classification number: H01L21/302 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/0237 ,  H01L21/67103 ,  H01L21/68742

Abstract: A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is β-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.

公开(公告)号：US20150240357A1

公开(公告)日：2015-08-27

申请号：US14628661

申请日：2015-02-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro TACHIBANA ,  Yuji TAKABATAKE ,  Manabu HONMA

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C16/45551 ,  C23C16/4581 ,  C23C16/4586

Abstract: A substrate processing apparatus performing substrate processing by supplying a process gas to a circular substrate loaded on a rotatable table in a vacuum container while rotating the substrate, including: a recess formed at one side of the rotatable table to receive the substrate; a heater heating the rotatable table to heat the substrate to 600 degrees or more for processing; and six support pins disposed on a bottom surface of the recess such that the support pins are respectively placed at vertices of a regular hexagon, support the substrate at locations separated a distance of two-thirds (2/3) of a radius of the substrate from a center of the substrate, and support the substrate in a state of being raised from the bottom surface of the recess.

Abstract translation: 一种基板处理装置，通过在旋转基板的同时将加工气体供给到装载在真空容器的旋转台上的圆形基板上进行基板处理，包括：形成在可旋转台的一侧以容纳基板的凹部; 加热所述可旋转台以将所述基板加热至600度以上以进行加工; 以及设置在凹部的底表面上的六个支撑销，使得支撑销分别放置在正六边形的顶点处，将基板支撑在分离基板的半径的三分之二（2/3）的距离的位置处 从衬底的中心，并且在从凹部的底表面升高的状态下支撑衬底。

公开(公告)号：US20210104412A1

公开(公告)日：2021-04-08

申请号：US17097466

申请日：2020-11-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keiko HADA ,  Akitaka SHIMIZU ,  Koichi NAGAKURA ,  Mitsuhiro TACHIBANA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

公开(公告)号：US20170200618A1

公开(公告)日：2017-07-13

申请号：US15402419

申请日：2017-01-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keiko HADA ,  Akitaka SHIMIZU ,  Koichi NAGAKURA ,  Mitsuhiro TACHIBANA

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/02049 ,  H01L21/67069

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

公开(公告)号：US20150211119A1

公开(公告)日：2015-07-30

申请号：US14604827

申请日：2015-01-26

Applicant: Tokyo Electron Limited

Inventor： Yuji ONO ,  Mitsuhiro TACHIBANA ,  Manabu HONMA

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/45565 ,  C23C16/402 ,  C23C16/4405 ,  C23C16/45551

Abstract: A film deposition apparatus includes a vacuum chamber, and a turntable having a substrate receiving area provided in the vacuum chamber. A heating unit is provided to heat the turntable so as to heat the substrate up to 600 degrees C. or higher. A process gas supply part is provided to supply a process gas having a decomposition temperature of 520 degrees C. or lower under 1 atmospheric pressure or lower, to the substrate. A gas shower head is provided in the process gas supply part and has a plurality of gas discharge holes provided in an opposed part facing a passing area of the substrate placed on the turntable. A cooling mechanism is provided in the process gas supply part and is configured to cool the opposed part in the gas shower head up to a temperature lower than the decomposition temperature of the process gas.

Abstract translation: 薄膜沉积设备包括真空室和设置在真空室中的具有基板接收区域的转台。 提供加热单元以加热转台以将基底加热至600摄氏度或更高。 提供了一种工艺气体供应部件，其将分解温度为520℃以下的处理气体提供给基板。 在处理气体供给部分设置有气体喷头，并且具有多个气体排出孔，该多个气体排出孔设置在面对放置在转台上的基板的通过区域的相对部分中。 在处理气体供给部中设置有冷却机构，并且将该气体喷淋头的对置部冷却至低于处理气体的分解温度的温度。

公开(公告)号：US20130337635A1

公开(公告)日：2013-12-19

申请号：US13916847

申请日：2013-06-13

Applicant: Tokyo Electron Limited

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Mitsuhiro TACHIBANA ,  Hitoshi KATO ,  Takeshi KOBAYASHI ,  Shigehiro MIURA ,  Takafumi KIMURA

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

Abstract translation: 一种被配置为在真空室中的基板上进行成膜处理的成膜装置，包括转盘，其被配置为使基板装载区域旋转以接收基板;膜沉积区域，包括至少一个工艺气体供给部件， 气体到基板装载区域，并且被配置为通过沉积转盘的旋转中的原子层和分子层中的至少一个来形成薄膜，等离子体处理部件沿着旋转方向设置在膜沉积区域 所述转盘并且被配置为处理所述原子层和所述分子层中的至少一个以进行等离子体修饰;以及偏置电极部分，其设置在所述转盘下方，而不接触所述转台并且被配置为产生偏置电位以将等离子体中的离子吸引到 基质。