公开(公告)号：US20150228488A1

公开(公告)日：2015-08-13

申请号：US14427852

申请日：2012-09-26

申请人： Tomohide Terashima ,  Yasuhiro Yoshiura ,  Eiko Otsuki

发明人： Tomohide Terashima ,  Yasuhiro Yoshiura ,  Eiko Otsuki

IPC分类号： H01L21/263 ,  H01J37/30 ,  H01L21/677 ,  H01L21/67 ,  H01L21/68

CPC分类号： H01L21/263 ,  H01J37/30 ,  H01J37/3002 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/20221 ,  H01J2237/30455 ,  H01J2237/317 ,  H01L21/67115 ,  H01L21/67718 ,  H01L21/67745 ,  H01L21/6776 ,  H01L21/68

摘要： A semiconductor device manufacturing method according to the present invention includes a step of arranging a plurality of processing objects on a first tray and a second tray adjacent to the first tray, a plurality of application steps in which application of an application substance to the plurality of processing objects is repeated a certain number of times by emitting the application substance from an application device formed right above a contact position at which the first tray and the second tray contact each other, by swinging the application device along a first direction across the contact position, and by moving the first tray and the second tray in a second direction perpendicular to the first direction, and an interchange step of interchanging the first tray and the second tray in position without changing the directions of the first tray and the second tray corresponding to the second direction, the interchange step being executed at least one time among the plurality of application steps.

摘要翻译： 根据本发明的半导体器件制造方法包括将多个处理对象布置在与第一托盘相邻的第一托盘和第二托盘上的步骤，多个施加步骤，其中将应用物质应用于多个 通过从第一托盘和第二托盘彼此接触的接触位置正上方形成的施加装置发射施加物质，通过沿着第一方向跨越接触位置摆动施加装置来重复加工物体一定次数 并且通过沿着与第一方向垂直的第二方向移动第一托盘和第二托盘，以及互换步骤，将第一托盘和第二托盘互换在适当位置，而不改变对应于第一托盘和第二托盘的方向 所述第二方向，所述交换步骤在所述多个之中至少执行一次 应用步骤。

公开(公告)号：US09159563B2

公开(公告)日：2015-10-13

申请号：US14427852

申请日：2012-09-26

申请人： Tomohide Terashima ,  Yasuhiro Yoshiura ,  Eiko Otsuki

发明人： Tomohide Terashima ,  Yasuhiro Yoshiura ,  Eiko Otsuki

IPC分类号： H01L21/02 ,  H01L21/263 ,  H01L21/67 ,  H01L21/68 ,  H01L21/677 ,  H01J37/30

CPC分类号： H01L21/263 ,  H01J37/30 ,  H01J37/3002 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/20221 ,  H01J2237/30455 ,  H01J2237/317 ,  H01L21/67115 ,  H01L21/67718 ,  H01L21/67745 ,  H01L21/6776 ,  H01L21/68

摘要： A semiconductor device manufacturing method according to the present invention includes a step of arranging a plurality of processing objects on a first tray and a second tray adjacent to the first tray, a plurality of application steps in which application of an application substance to the plurality of processing objects is repeated a certain number of times by emitting the application substance from an application device formed right above a contact position at which the first tray and the second tray contact each other, by swinging the application device along a first direction across the contact position, and by moving the first tray and the second tray in a second direction perpendicular to the first direction, and an interchange step of interchanging the first tray and the second tray in position without changing the directions of the first tray and the second tray corresponding to the second direction, the interchange step being executed at least one time among the plurality of application steps.

摘要翻译： 根据本发明的半导体器件制造方法包括将多个处理对象布置在与第一托盘相邻的第一托盘和第二托盘上的步骤，多个施加步骤，其中将应用物质应用于多个 通过从第一托盘和第二托盘彼此接触的接触位置正上方形成的施加装置发射施加物质，通过沿着第一方向跨越接触位置摆动施加装置来重复加工物体一定次数 并且通过沿着与第一方向垂直的第二方向移动第一托盘和第二托盘，以及互换步骤，将第一托盘和第二托盘互换在适当位置，而不改变对应于第一托盘和第二托盘的方向 所述第二方向，所述交换步骤在所述多个之中至少执行一次 应用步骤。