公开(公告)号：US20120001321A1

公开(公告)日：2012-01-05

申请号：US13234099

申请日：2011-09-15

申请人： Tomomi IMAMURA ,  Tetsuo Natsuda ,  Yoshinosuke Nishijo

发明人： Tomomi IMAMURA ,  Tetsuo Natsuda ,  Yoshinosuke Nishijo

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/53209 ,  H01L21/76852 ,  H01L21/76883 ,  H01L21/76885 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask.

摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底上形成第一金属层，所述半导体衬底包括扩散层; 在所述第一金属层上形成具有开口的绝缘层; 在绝缘层的开口中的第一金属层上形成第二金属层; 去除绝缘层; 用第三金属层覆盖第二金属层的暴露表面，第三金属层包括电离倾向低于第二金属层的金属; 以及通过使用第三金属层作为掩模去除第一金属层，形成包括第一金属层，第二金属层和第三金属层的电极互连。