公开(公告)号：US20120112308A1

公开(公告)日：2012-05-10

申请号：US13238617

申请日：2011-09-21

申请人： Tetsuo Matsuda ,  Tomomi Imamura

发明人： Tetsuo Matsuda ,  Tomomi Imamura

IPC分类号： H01L25/00 ,  H01L21/66 ,  H01L21/78

CPC分类号： H01L29/7813 ,  H01L22/14 ,  H01L23/3107 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/41741 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/7811 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/0615 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2224/40499 ,  H01L2224/41113 ,  H01L2224/4117 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/4917 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： According to one embodiment, a semiconductor device includes a device portion, a first electrode portion, a second electrode portion and a protruding portion. The device portion is provided on a substrate. The first electrode portion is provided on the device portion and is electrically contacted with the device portion. The second electrode portion is provided on the device portion separated from the first electrode portion, and electrically contacted with the device portion. The protruding portion is provided on the device portion and protrudes outward from a peripheral portion of the first electrode portion and the second electrode portion.

摘要翻译： 根据一个实施例，半导体器件包括器件部分，第一电极部分，第二电极部分和突出部分。 器件部分设置在衬底上。 第一电极部分设置在器件部分上并与器件部分电接触。 第二电极部分设置在与第一电极部分分离的器件部分上，并与器件部分电接触。 突出部分设置在装置部分上并从第一电极部分和第二电极部分的周边部分向外突出。

公开(公告)号：US08415247B2

公开(公告)日：2013-04-09

申请号：US13234099

申请日：2011-09-15

申请人： Tomomi Imamura ,  Tetsuo Matsuda ,  Yoshinosuke Nishijo

发明人： Tomomi Imamura ,  Tetsuo Matsuda ,  Yoshinosuke Nishijo

IPC分类号： H01L21/4763

CPC分类号： H01L23/53209 ,  H01L21/76852 ,  H01L21/76883 ,  H01L21/76885 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask.

摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底上形成第一金属层，所述半导体衬底包括扩散层; 在所述第一金属层上形成具有开口的绝缘层; 在绝缘层的开口中的第一金属层上形成第二金属层; 去除绝缘层; 用第三金属层覆盖第二金属层的暴露表面，第三金属层包括电离倾向低于第二金属层的金属; 以及通过使用第三金属层作为掩模去除第一金属层，形成包括第一金属层，第二金属层和第三金属层的电极互连。

公开(公告)号：US20120001321A1

公开(公告)日：2012-01-05

申请号：US13234099

申请日：2011-09-15

申请人： Tomomi IMAMURA ,  Tetsuo Natsuda ,  Yoshinosuke Nishijo

发明人： Tomomi IMAMURA ,  Tetsuo Natsuda ,  Yoshinosuke Nishijo

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/53209 ,  H01L21/76852 ,  H01L21/76883 ,  H01L21/76885 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask.

摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底上形成第一金属层，所述半导体衬底包括扩散层; 在所述第一金属层上形成具有开口的绝缘层; 在绝缘层的开口中的第一金属层上形成第二金属层; 去除绝缘层; 用第三金属层覆盖第二金属层的暴露表面，第三金属层包括电离倾向低于第二金属层的金属; 以及通过使用第三金属层作为掩模去除第一金属层，形成包括第一金属层，第二金属层和第三金属层的电极互连。

公开(公告)号：US08067310B2

公开(公告)日：2011-11-29

申请号：US12645908

申请日：2009-12-23

申请人： Tomomi Imamura ,  Tetsuo Matsuda ,  Yoshinosuke Nishijo

发明人： Tomomi Imamura ,  Tetsuo Matsuda ,  Yoshinosuke Nishijo

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L23/53209 ,  H01L21/76852 ,  H01L21/76883 ,  H01L21/76885 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask.

摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底上形成第一金属层，所述半导体衬底包括扩散层; 在所述第一金属层上形成具有开口的绝缘层; 在绝缘层的开口中的第一金属层上形成第二金属层; 去除绝缘层; 用第三金属层覆盖第二金属层的暴露表面，第三金属层包括电离倾向低于第二金属层的金属; 以及通过使用第三金属层作为掩模去除第一金属层，形成包括第一金属层，第二金属层和第三金属层的电极互连。

公开(公告)号：US20100164095A1

公开(公告)日：2010-07-01

申请号：US12645908

申请日：2009-12-23

申请人： Tomomi IMAMURA ,  Tetsuo MATSUDA ,  Yoshinosuke NISHIJO

发明人： Tomomi IMAMURA ,  Tetsuo MATSUDA ,  Yoshinosuke NISHIJO

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/53209 ,  H01L21/76852 ,  H01L21/76883 ,  H01L21/76885 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask.

摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底上形成第一金属层，所述半导体衬底包括扩散层; 在所述第一金属层上形成具有开口的绝缘层; 在绝缘层的开口中的第一金属层上形成第二金属层; 去除绝缘层; 用第三金属层覆盖第二金属层的暴露表面，第三金属层包括电离倾向低于第二金属层的金属; 以及通过使用第三金属层作为掩模去除第一金属层，形成包括第一金属层，第二金属层和第三金属层的电极互连。