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35 条记录 (耗时 0.019 秒)

    Sulfur atom-containing anti-reflective coating forming composition for lithography
    1.
    发明授权
    Sulfur atom-containing anti-reflective coating forming composition for lithography 有权
    含硫原子的抗反射涂层组合物用于光刻

    公开(公告)号：US07795369B2

    公开(公告)日：2010-09-14

    申请号：US11664989

    申请日：2005-09-27

    申请人： Tomoyuki Enomoto ,  Yoshiomi Hiroi ,  Keisuke Nakayama

    发明人： Tomoyuki Enomoto ,  Yoshiomi Hiroi ,  Keisuke Nakayama

    IPC分类号： C08G12/32 ,  C08G12/12

    CPC分类号： G03F7/091

    摘要： There is provided an anti-reflective coating forming composition for lithography comprising a reaction product obtained by reacting a sulfur-containing compound having thiourea structure with a nitrogen-containing compound having two or more nitrogen atoms substituted with a hydroxymethyl group or an alkoxymethyl group in the presence of an acid catalyst and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists and can use in lithography process for manufacturing semiconductor device.

    摘要翻译： 提供了一种用于光刻的抗反射涂层形成组合物，其包含通过使具有硫脲结构的含硫化合物与具有羟基甲基或烷氧基甲基取代的具有两个或更多个氮原子的含氮化合物反应而获得的反应产物 存在酸催化剂和溶剂。 由组合物得到的抗反射涂层对于反射光具有很高的防止效果，不会与光致抗蚀剂混合，与光致抗蚀剂相比具有更高的干蚀刻速度，并可用于制造半导体器件的光刻工艺。

    Sulfur Atom-Containing Anti-Reflective Coating Forming Composition For Lithography
    2.
    发明申请
    Sulfur Atom-Containing Anti-Reflective Coating Forming Composition For Lithography 有权
    含硫原子的防反射涂层组合物用于光刻

    公开(公告)号：US20080118870A1

    公开(公告)日：2008-05-22

    申请号：US11664989

    申请日：2005-09-27

    申请人： Tomoyuki Enomoto ,  Yoshiomi Hiroi ,  Keisuke Nakayama

    发明人： Tomoyuki Enomoto ,  Yoshiomi Hiroi ,  Keisuke Nakayama

    IPC分类号： G03F7/26 ,  C07C335/02 ,  C07D251/18

    CPC分类号： G03F7/091

    摘要： There is provided an anti-reflective coating forming composition for lithography comprising a reaction product obtained by reacting a sulfur-containing compound having thiourea structure with a nitrogen-containing compound having two or more nitrogen atoms substituted with a hydroxymethyl group or an alkoxymethyl group in the presence of an acid catalyst and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists and can use in lithography process for manufacturing semiconductor device.

    摘要翻译： 提供了一种用于光刻的抗反射涂层形成组合物，其包含通过使具有硫脲结构的含硫化合物与具有羟基甲基或烷氧基甲基取代的具有两个或更多个氮原子的含氮化合物反应而获得的反应产物 存在酸催化剂和溶剂。 由组合物得到的抗反射涂层对于反射光具有很高的防止效果，不会与光致抗蚀剂混合，与光致抗蚀剂相比具有更高的干蚀刻速度，并可用于制造半导体器件的光刻工艺。

    Anti-reflective coating containing sulfur atom
    3.
    发明授权
    Anti-reflective coating containing sulfur atom 有权
    含有硫原子的防反射涂层

    公开(公告)号：US07501229B2

    公开(公告)日：2009-03-10

    申请号：US10592805

    申请日：2005-03-15

    申请人： Yoshiomi Hiroi ,  Takahiro Kishioka ,  Keisuke Nakayama ,  Rikimaru Sakamoto

    发明人： Yoshiomi Hiroi ,  Takahiro Kishioka ,  Keisuke Nakayama ,  Rikimaru Sakamoto

    IPC分类号： G03F7/11 ,  C08L101/00 ,  H01L21/027

    CPC分类号： G03F7/091 ,  C08G75/00 ,  C09D181/00 ,  C09D181/02 ,  H01L21/0276

    摘要： There is provided an anti-reflective coating forming composition comprising a solid content and a solvent, wherein a proportion of sulfur atom in the solid content is 5 to 25 mass %. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, and can use in lithography process by use of a light having a short wavelength such as F2 excimer laser beam (wavelength 157 nm) or ArF excimer laser beam (wavelength 193 nm), etc.

    摘要翻译： 提供了包含固体含量和溶剂的抗反射涂层形成组合物，其中固体含量中硫原子的比例为5〜25质量％。 由组合物获得的抗反射涂层对反射光具有很高的防止效果，不会与光致抗蚀剂混合，并且可以在光刻工艺中使用具有短波长的光，例如F2准分子激光束（波长157nm） 或ArF准分子激光束（波长193nm）等

    Anti-reflective compositions comprising triazine compounds
    6.
    发明授权
    Anti-reflective compositions comprising triazine compounds 有权
    包含三嗪化合物的抗反射组合物

    公开(公告)号：US07038328B2

    公开(公告)日：2006-05-02

    申请号：US10271646

    申请日：2002-10-15

    申请人： Tomoyuki Enomoto ,  Keisuke Nakayama ,  Rama Puligadda

    发明人： Tomoyuki Enomoto ,  Keisuke Nakayama ,  Rama Puligadda

    IPC分类号： H01L23/29 ,  B32B27/32

    CPC分类号： G03F7/091 ,  Y10T428/31938

    摘要： The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or an alkoxymethyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.

    摘要翻译： 本发明涉及一种抗反射涂料组合物，其特征在于包含由具有至少两个氮原子取代羟甲基和/或烷氧基甲基的三嗪化合物制成的树脂，以及光吸收化合物和/或光吸收树脂。 本发明提供了一种用于抗反射涂层的抗反射涂层组合物，其在制备半导体器件时用于光刻工艺的光具有高的光吸收特性，显示出高的防反射光效果，在更薄的膜厚度下使用 并且与光致抗蚀剂层相比具有更大的干蚀刻速率。

    Photoelectric conversion device
    9.
    发明申请
    Photoelectric conversion device 审中-公开
    光电转换装置

    公开(公告)号：US20060137737A1

    公开(公告)日：2006-06-29

    申请号：US11363475

    申请日：2006-02-27

    申请人： Keisuke Nakayama ,  Yoshinori Nishikitani

    发明人： Keisuke Nakayama ,  Yoshinori Nishikitani

    IPC分类号： H01L31/00

    CPC分类号： H01L51/4226 ,  H01L31/0392 ,  H01L31/07 ,  H01L31/18 ,  Y02E10/542 ,  Y02E10/549 ,  Y02P70/521

    摘要： The present invention provide an all solid-state photoelectric conversion device which comprises a semiconductor, an electrically conductive substrate arranged on one surface of the semiconductor and forming an ohmic junction therewith, an electrically conductive film arranged on the other surface and forming a Schottky junction with the semiconductor, and a sensitizing dye layer arranged on the electrically conductive film, the roughness factor of the surface of the semiconductor forming a Schottky junction being 5 or greater. The photoelectric conversion device has a large effective surface area and a high durability and can be manufactured at a low cost.

    摘要翻译： 本发明提供一种全固体光电转换装置，其包括半导体，布置在半导体的一个表面上并与其形成欧姆结的导电基板，导电膜布置在另一表面上并形成肖特基结， 半导体和布置在导电膜上的敏化染料层，形成肖特基结的半导体的表面的粗糙度为5以上。 光电转换装置具有大的有效表面积和高耐久性，并且可以以低成本制造。

    IC card system
    10.
    发明申请
    IC card system 审中-公开
    IC卡系统

    公开(公告)号：US20050086497A1

    公开(公告)日：2005-04-21

    申请号：US10963517

    申请日：2004-10-14

    申请人： Keisuke Nakayama

    发明人： Keisuke Nakayama

    IPC分类号： G06F12/14 ,  G06F1/00 ,  G06F21/00 ,  G06K17/00 ,  H04L9/32

    CPC分类号： G06F21/77 ,  G06F21/32 ,  G06F21/6218 ,  G06F21/78

    摘要： An IC card system capable of increasing a storage capacity virtually and flexibly while making the best use of characteristics of the IC card, facilitating file layout, and ensuring security among applications. With personal common information (data A) and virtual area management information (access keys, encryption/decryption keys, and information indicating encrypted data file location) stored in the IC card, an application executed by a control unit of a processor loads the data A in a memory, acquires the encryption/decryption key corresponding to the retained access key and the information indicating the encrypted data file location from the IC card, reads encrypted data B′ from the acquired data file location, decrypts the acquired encryption/decryption key, and loads the data B in the memory for using the data.

    摘要翻译： 一种IC卡系统能够在充分利用IC卡的特性，促进文件布局和确保应用之间的安全性的同时，虚拟，灵活地增加存储容量。 存储在IC卡中的个人公共信息（数据A）和虚拟区域管理信息（访问密钥，加密/解密密钥以及指示加密数据文件位置的信息）由处理器的控制单元执行的应用程序加载数据A 在存储器中，从IC卡获取与保留的访问密钥相对应的加密/解密密钥和指示加密数据文件位置的信息，从获取的数据文件位置读取加密数据B'，对所获取的加密/解密密钥进行解密， 并将数据B加载到存储器中以使用数据。