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公开(公告)号：US08580131B2
公开(公告)日：2013-11-12
申请号：US13363488
申请日：2012-02-01
CPC分类号： H01L21/31116
摘要： It is an object of the present invention to provide a plasma etching method that can improve a selection ratio of a film to be etched to a film different from the film to be etched than that in the related art. The present invention provides a plasma etching method for selectively etching a film to be etched with respect to another film different from the film to be etched, the plasma etching method including etching, using gas that can generate a deposited film containing components same as components of the another film different from the film to be etched, the film on which generation of the deposited film is suppressed.
摘要翻译： 本发明的目的是提供一种等离子体蚀刻方法，其可以提高与要蚀刻的膜相比不同于待蚀刻的膜的膜的选择比，而不是现有技术。 本发明提供了一种等离子体蚀刻方法，用于相对于不同于待蚀刻的膜的另一膜选择性地蚀刻待蚀刻的膜，该等离子体蚀刻方法包括蚀刻，使用可产生含有与 与被蚀刻的膜不同的另一膜，抑制了沉积膜的一代的膜。
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公开(公告)号：US20130109184A1
公开(公告)日：2013-05-02
申请号：US13363488
申请日：2012-02-01
IPC分类号： H01L21/306
CPC分类号： H01L21/31116
摘要： It is an object of the present invention to provide a plasma etching method that can improve a selection ratio of a film to be etched to a film different from the film to be etched than that in the related art. The present invention provides a plasma etching method for selectively etching a film to be etched with respect to another film different from the film to be etched, the plasma etching method including etching, using gas that can generate a deposited film containing components same as components of the another film different from the film to be etched, the film on which generation of the deposited film is suppressed.
摘要翻译： 本发明的目的是提供一种等离子体蚀刻方法，其可以提高与要蚀刻的膜相比不同于待蚀刻的膜的膜的选择比，而不是现有技术。 本发明提供了一种等离子体蚀刻方法，用于相对于不同于待蚀刻的膜的另一膜选择性地蚀刻待蚀刻的膜，该等离子体蚀刻方法包括蚀刻，使用可产生含有与 与被蚀刻的膜不同的另一膜，抑制了沉积膜的一代的膜。
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公开(公告)号：US08801951B2
公开(公告)日：2014-08-12
申请号：US13210490
申请日：2011-08-16
申请人： Yoshiharu Inoue , Michikazu Morimoto , Tsuyoshi Matsumoto , Tetsuo Ono , Tadamitsu Kanekiyo , Mamoru Yakushiji , Masakazu Miyaji
发明人： Yoshiharu Inoue , Michikazu Morimoto , Tsuyoshi Matsumoto , Tetsuo Ono , Tadamitsu Kanekiyo , Mamoru Yakushiji , Masakazu Miyaji
IPC分类号： C03C15/00
CPC分类号： H01L21/31116
摘要： In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.
摘要翻译： 在等离子体处理方法中，通过在施加射频电力的状态下，通过从引入到处理室中的沉积气体产生等离子体并将待处理物体暴露于等离子体，对待处理对象进行蚀刻， 在处理室的内壁上的沉积膜通过重复将被处理物暴露于等离子体的第一期间和第二期间，使被处理室的暴露于 等离子体和蚀刻速率比第一阶段低。 因此，能够抑制由于加工对象物的加工张数而增加的粒子。
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公开(公告)号：US20110297082A1
公开(公告)日：2011-12-08
申请号：US12854242
申请日：2010-08-11
IPC分类号： C23C4/00
摘要： A plasma processing apparatus includes a metallic basic material arranged in a sample stage, a dielectric film of dielectric material disposed on an upper surface of the basic material, the dielectric film being formed through a plasma spray process; a film-shaped heater disposed in the dielectric film, the heater being formed through a plasma spray process; an adhesive layer arranged on the dielectric film; a sintered ceramic plate having a thickness ranging from about 0.2 mm to about 0.4 mm, the sintered ceramic plate being adhered onto the dielectric film by the adhesive layer; a sensor disposed in the basic material for sensing a temperature; and a controller for receiving an output from the sensor and adjusting quantity of heat generated by the heater.
摘要翻译： 等离子体处理装置包括布置在样品台中的金属基材，设置在基材的上表面上的电介质材料的电介质膜，电介质膜通过等离子体喷涂法形成; 设置在电介质膜中的膜状加热器，加热器通过等离子体喷涂工艺形成; 布置在电介质膜上的粘合剂层; 烧结陶瓷板的厚度范围为约0.2mm至约0.4mm，烧结陶瓷板通过粘合剂层粘附到电介质膜上; 设置在基本材料中以感测温度的传感器; 以及控制器，用于接收来自传感器的输出并调节由加热器产生的热量。
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公开(公告)号：US09150967B2
公开(公告)日：2015-10-06
申请号：US12854242
申请日：2010-08-11
摘要： A plasma processing apparatus includes a metallic basic material arranged in a sample stage, a dielectric film of dielectric material disposed on an upper surface of the basic material, the dielectric film being formed through a plasma spray process; a film-shaped heater disposed in the dielectric film, the heater being formed through a plasma spray process; an adhesive layer arranged on the dielectric film; a sintered ceramic plate having a thickness ranging from about 0.2 mm to about 0.4 mm, the sintered ceramic plate being adhered onto the dielectric film by the adhesive layer; a sensor disposed in the basic material for sensing a temperature; and a controller for receiving an output from the sensor and adjusting quantity of heat generated by the heater.
摘要翻译： 等离子体处理装置包括布置在样品台中的金属基材，设置在基材的上表面上的电介质材料的电介质膜，电介质膜通过等离子体喷涂法形成; 设置在电介质膜中的膜状加热器，加热器通过等离子体喷涂工艺形成; 布置在电介质膜上的粘合剂层; 烧结陶瓷板的厚度范围为约0.2mm至约0.4mm，烧结陶瓷板通过粘合剂层粘附到电介质膜上; 设置在基本材料中以感测温度的传感器; 以及控制器，用于接收来自传感器的输出并调节由加热器产生的热量。
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公开(公告)号：US20080280451A1
公开(公告)日：2008-11-13
申请号：US12073048
申请日：2008-02-28
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01J2237/2001 , H01L21/67248
摘要： A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.
摘要翻译： 一种等离子体处理装置，包括：由绝缘材料制成的薄膜，构成放置样品的样品台的表面; 其上表面与膜接合在膜的下部并由导热构件制成的盘状构件; 加热器布置在膜中并且布置在膜的中心部分和其外周侧的区域中; 布置在盘状构件中并且用于冷却盘形构件的冷却剂流过的冷却剂通道; 多个电源，其各自调整对所述多个区域中的每个所述加热器的电力; 以及控制器，其通过使用通过假设盘状构件的上表面的温度获得的结果来调整来自多个电源的输出。
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公开(公告)号：US20090218316A1
公开(公告)日：2009-09-03
申请号：US12038841
申请日：2008-02-28
IPC分类号： C23F1/00
CPC分类号： H01L21/67103 , H01J2237/2001 , H01L21/67248
摘要： A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater.
摘要翻译： 一种制造方法包括以下步骤：将由电介质组成的膜放置在样品台的顶表面上，在由电介质制成的膜上形成膜状加热器，向加热器供电以检测温度分布，调节 基于温度分布的检测结果使加热器的电阻值，使得温度分布具有预定值，然后在加热器上形成由电介质组成的膜。
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公开(公告)号：US07026252B2
公开(公告)日：2006-04-11
申请号：US10372271
申请日：2003-02-25
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802
摘要： After etching a Si-containing low permittivity insulating film with chlorine based gas, the etched wafer is subjected to an etching aftertreatment process comprising introducing oxygen gas to a vacuum processing chamber with a pressure as low as 0.2 Pa to 1 Pa and a flow rate as low as 5 cc to 20 cc/min, generating plasma within the chamber, heating the wafer 2 being subjected to aftertreatment between 50° C. and 200° C., applying a wafer bias power within the range of 50 W to 200 W, and exposing the wafer to the generated plasma, thereby simultaneously removing the photoresist components, the antireflection film components and the halogen components.
摘要翻译： 在用含氯气体蚀刻含Si低介电常数绝缘膜之后，对经蚀刻的晶片进行蚀刻后处理，其中包括将氧气引入至低至0.2Pa至1Pa的压力的真空处理室中，流速为 低至5cc至20cc / min，在室内产生等离子体，加热晶片2在50℃和200℃之间进行后处理，将晶片偏置功率施加在50W至200W的范围内， 并将晶片暴露于产生的等离子体，从而同时去除光致抗蚀剂组分，抗反射膜组分和卤素组分。
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公开(公告)号：US06444087B2
公开(公告)日：2002-09-03
申请号：US09866702
申请日：2001-05-30
申请人： Makoto Nawata , Mamoru Yakushiji , Tomoyuki Tamura
发明人： Makoto Nawata , Mamoru Yakushiji , Tomoyuki Tamura
IPC分类号： H05H100
CPC分类号： H01J37/32009 , H01J37/32192 , H01J37/32532 , H01L21/32137
摘要： A plasma etching system using a ground electrode made of silicon carbide and a cover made of a dielectric material not containing aluminum, where the cover is laid over the substrate electrode, thereby preventing aluminum from being produced out of these parts and reducing device damage. Namely, a plasma etching system has a substrate electrode mounted in a vacuum process chamber, a ground electrode and a plasma generating source, and uses plasma to provide etching of substrates mounted on said substrate electrode. The plasma etching system is characterized in that the ground electrode is made of carbon or silicon carbide, and the dielectric material containing a Si compound covers the surface portion of the substrate electrode facing inside the substrate installation portion of the vacuum process chamber, except for the substrate installation portion.
摘要翻译： 使用由碳化硅制成的接地电极的等离子体蚀刻系统和由不含铝的电介质材料构成的盖子，其中覆盖物被覆在基板电极上，从而防止从这些部件产生铝并减少装置损坏。 也就是说，等离子体蚀刻系统具有安装在真空处理室，接地电极和等离子体发生源中的基板电极，并且使用等离子体来提供安装在所述基板电极上的基板的蚀刻。 等离子体蚀刻系统的特征在于，接地电极由碳或碳化硅制成，并且包含Si化合物的电介质材料覆盖面对真空处理室的衬底安装部分内部的衬底电极的表面部分，除了 基板安装部分。
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公开(公告)号：US08092637B2
公开(公告)日：2012-01-10
申请号：US12038841
申请日：2008-02-28
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67103 , H01J2237/2001 , H01L21/67248
摘要： A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater.
摘要翻译： 一种制造方法包括以下步骤：将由电介质组成的膜放置在样品台的顶表面上，在由电介质制成的膜上形成膜状加热器，向加热器供电以检测温度分布，调节 基于温度分布的检测结果使加热器的电阻值，使得温度分布具有预定值，然后在加热器上形成由电介质组成的膜。
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