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公开(公告)号：US07026252B2
公开(公告)日：2006-04-11
申请号：US10372271
申请日：2003-02-25
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802
摘要： After etching a Si-containing low permittivity insulating film with chlorine based gas, the etched wafer is subjected to an etching aftertreatment process comprising introducing oxygen gas to a vacuum processing chamber with a pressure as low as 0.2 Pa to 1 Pa and a flow rate as low as 5 cc to 20 cc/min, generating plasma within the chamber, heating the wafer 2 being subjected to aftertreatment between 50° C. and 200° C., applying a wafer bias power within the range of 50 W to 200 W, and exposing the wafer to the generated plasma, thereby simultaneously removing the photoresist components, the antireflection film components and the halogen components.
摘要翻译： 在用含氯气体蚀刻含Si低介电常数绝缘膜之后，对经蚀刻的晶片进行蚀刻后处理，其中包括将氧气引入至低至0.2Pa至1Pa的压力的真空处理室中，流速为 低至5cc至20cc / min，在室内产生等离子体，加热晶片2在50℃和200℃之间进行后处理，将晶片偏置功率施加在50W至200W的范围内， 并将晶片暴露于产生的等离子体，从而同时去除光致抗蚀剂组分，抗反射膜组分和卤素组分。
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公开(公告)号：US07122479B2
公开(公告)日：2006-10-17
申请号：US10228917
申请日：2002-08-28
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01J2237/3342 , H01L21/31116 , H01L21/31138
摘要： An etching processing method capable of etching a low dielectric constant layer at a reduced cost by using an etching processing apparatus comprising a vacuum vessel, a sample loading electrode disposed in the vacuum vessel, a gas introduction device for introducing a reaction gas into the vacuum vessel, an antenna for forming plasmas in the vacuum vessel, and a high frequency power supply for supplying a bias power to a sample loaded on the sample loading electrode, wherein the bias power to be supplied to the sample is 3 W/cm2 or less, and the gas introduction device introduces a gas containing chlorine atoms or bromine atoms to apply etching processing to an inorganic insulation material of low dielectric constant loaded on the loading electrode.
摘要翻译： 一种蚀刻处理方法，其能够通过使用包括真空容器，设置在真空容器中的样品加载电极的蚀刻处理装置，以较低的成本蚀刻低介电常数层，将反应气体引入真空容器中的气体引入装置 ，用于在真空容器中形成等离子体的天线和用于向装载在样本加载电极上的样品提供偏置功率的高频电源，其中待提供给样品的偏置功率为3W / 2以下，气体引入装置引入含有氯原子或溴原子的气体，对负载在负载电极上的低介电常数的无机绝缘材料进行蚀刻处理。
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公开(公告)号：US07009714B2
公开(公告)日：2006-03-07
申请号：US10372838
申请日：2003-02-26
申请人： Yutaka Ohmoto , Ryouji Fukuyama , Mamoru Yakushiji
发明人： Yutaka Ohmoto , Ryouji Fukuyama , Mamoru Yakushiji
IPC分类号： G01B9/02
CPC分类号： H01L21/31138 , G01B11/0625 , G01B11/0683 , G01N21/4788 , G01N21/9501 , H01L21/67069
摘要： A process recipe is controlled by processing reflection interference light on the surface of a wafer with a signal and etching is carried out by suppressing an increase in the surface roughness of the wafer during etching. That is, a dry etching method for use in a dry etching system comprising means of treating a sample by generating plasma in a vacuum process chamber and monitor means of monitoring the reflection interference light of the sample to be treated, the method comprising the step of detecting the spectrum of reflection interference light on the surface of the sample to be treated, the step of obtaining a residual from curve fit between a theoretical value estimated from the film reflection model of the surface of the wafer and the spectrum of reflection interference light, and the step of judging whether the residual from the curve fit falls within a predetermined value.
摘要翻译： 通过用信号处理晶片表面上的反射干涉光来控制工艺配方，并且通过抑制蚀刻期间晶片的表面粗糙度的增加来进行蚀刻。 也就是说，干蚀刻系统中使用的干法蚀刻方法，包括在真空处理室中产生等离子体处理样品和监测待处理样品的反射干涉光的监测装置的方法，该方法包括以下步骤： 检测待处理样品的表面上的反射干涉光的光谱，从由晶片表面的膜反射模型估计出的理论值与反射干涉光的光谱之间的曲线拟合的残差获得的步骤， 以及判断曲线拟合的残差是否落在预定值内的步骤。
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公开(公告)号：US07396481B2
公开(公告)日：2008-07-08
申请号：US11208592
申请日：2005-08-23
CPC分类号： H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01L21/31138 , H01L21/31144
摘要： This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.
摘要翻译： 本发明涉及用于制造半导体器件的有机绝缘膜的蚀刻方法。 通过从氢气和氮气或氨气中产生等离子体来蚀刻要形成低介电常数有机绝缘膜的待蚀刻样品，并控制气体流速和压力，使氢气的发光光谱强度比 等离子体中的原子和青色分子达到规定值。 通过这种方法，可以在不使用任何蚀刻停止层的情况下蚀刻作为层之间的绝缘膜的低介电常数有机绝缘膜，使得用于电线的沟槽和孔的底表面变得平坦。
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公开(公告)号：US07014787B2
公开(公告)日：2006-03-21
申请号：US10814249
申请日：2004-04-01
CPC分类号： H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01L21/31138 , H01L21/31144
摘要： This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.
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公开(公告)号：US20060065624A1
公开(公告)日：2006-03-30
申请号：US11208592
申请日：2005-08-23
CPC分类号： H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01L21/31138 , H01L21/31144
摘要： This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.
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公开(公告)号：US06793833B2
公开(公告)日：2004-09-21
申请号：US10080540
申请日：2002-02-25
IPC分类号： H01L2100
CPC分类号： H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01L21/31138 , H01L21/31144
摘要： This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed and is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surface of trenches and holes for electrical wiring become flat.
摘要翻译： 本发明涉及用于制造半导体器件的有机绝缘膜的蚀刻方法。 在其上形成低介电常数有机绝缘膜的被蚀刻样品，并通过从氢气和氮气或氨气产生等离子体进行蚀刻，并控制气体流速和压力，使得发光光谱强度比 等离子体中的氢原子和青色分子达到规定值。 通过这种方法，可以在不使用任何蚀刻停止层的情况下蚀刻作为层之间的绝缘膜的低介电常数有机绝缘膜，使得沟槽的底表面和电线的孔变得平坦。
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公开(公告)号：US20050011612A1
公开(公告)日：2005-01-20
申请号：US10787461
申请日：2004-02-27
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , H01L21/311 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32431 , H01J2237/022 , H01L21/31138
摘要： An apparatus for etching an organic film that is capable of suppressing the amount of contaminants adhered to the etched substrate without deteriorating the etching properties or processing profile of the film, comprising disposing a ring formed of a semiconductor material on the outer circumference of a substrate to be processed, and applying a bias voltage to the ring.
摘要翻译： 一种用于蚀刻有机膜的装置，其能够抑制粘附到蚀刻的基板上的污染物的量，而不会劣化该膜的蚀刻性能或处理轮廓，包括将由半导体材料形成的环设置在基板的外周上至 并对环施加偏置电压。
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公开(公告)号：US20110297082A1
公开(公告)日：2011-12-08
申请号：US12854242
申请日：2010-08-11
IPC分类号： C23C4/00
摘要： A plasma processing apparatus includes a metallic basic material arranged in a sample stage, a dielectric film of dielectric material disposed on an upper surface of the basic material, the dielectric film being formed through a plasma spray process; a film-shaped heater disposed in the dielectric film, the heater being formed through a plasma spray process; an adhesive layer arranged on the dielectric film; a sintered ceramic plate having a thickness ranging from about 0.2 mm to about 0.4 mm, the sintered ceramic plate being adhered onto the dielectric film by the adhesive layer; a sensor disposed in the basic material for sensing a temperature; and a controller for receiving an output from the sensor and adjusting quantity of heat generated by the heater.
摘要翻译： 等离子体处理装置包括布置在样品台中的金属基材，设置在基材的上表面上的电介质材料的电介质膜，电介质膜通过等离子体喷涂法形成; 设置在电介质膜中的膜状加热器，加热器通过等离子体喷涂工艺形成; 布置在电介质膜上的粘合剂层; 烧结陶瓷板的厚度范围为约0.2mm至约0.4mm，烧结陶瓷板通过粘合剂层粘附到电介质膜上; 设置在基本材料中以感测温度的传感器; 以及控制器，用于接收来自传感器的输出并调节由加热器产生的热量。
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公开(公告)号：US20080280451A1
公开(公告)日：2008-11-13
申请号：US12073048
申请日：2008-02-28
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01J2237/2001 , H01L21/67248
摘要： A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.
摘要翻译： 一种等离子体处理装置，包括：由绝缘材料制成的薄膜，构成放置样品的样品台的表面; 其上表面与膜接合在膜的下部并由导热构件制成的盘状构件; 加热器布置在膜中并且布置在膜的中心部分和其外周侧的区域中; 布置在盘状构件中并且用于冷却盘形构件的冷却剂流过的冷却剂通道; 多个电源，其各自调整对所述多个区域中的每个所述加热器的电力; 以及控制器，其通过使用通过假设盘状构件的上表面的温度获得的结果来调整来自多个电源的输出。
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