8-AZAPROSTAGLANDIN DERIVATIVES AND MEDICAL USE THEREOF
    1.
    发明申请
    8-AZAPROSTAGLANDIN DERIVATIVES AND MEDICAL USE THEREOF 审中-公开
    8-AZAPROSTAGLANDIN衍生物及其医疗用途

    公开(公告)号:US20080033033A1

    公开(公告)日:2008-02-07

    申请号:US11749531

    申请日:2007-05-16

    CPC分类号: C07D417/12 C07D417/14

    摘要: The pharmaceutical composition comprising the compound of the invention having 8-azaprostaglandin skeleton represented by formula (I) (wherein, all the symbols have the same meanings as that of the specification.) a salt thereof, a solvate thereof or a cyclodextrin clathrate thereof, or a prodrug thereof and them as active ingredient have EP4 agonistic action and thus are considered useful for the prevention and/or treatment of immunological diseases, asthma, neuronal cell death, arthritis, lung failure, pulmonary fibrosis, pulmonary emphysema, bronchitis, chronic obstructive pulmonary disease, liver damage, acute hepatitis, nephritis, renal insufficiency, hypertension, myocardial ischemia, systemic inflammatory response syndrome, sepsis, hemophagous syndrome, macrophage activation syndrome, Still's disease, Kawasaki disease, burn, systemic granulomatosis, ulcerative colitis, Crohn's disease, hypercytokinemia at dialysis, multiple organ failure, shock and glaucoma, etc. Furthermore, the compounds also have an action of accelerating bone formation, so it is expected to be useful for the prevention and/or treatment of diseases associated with loss in bone mass, for example, primary osteoporosis, secondary osteoporosis, bone metastasis of cancer, hypercalcemia, Paget's disease, bone loss, osteonecrosis, bone formation after bone operation, alternative treatment for bone grafting.

    摘要翻译: 包含本发明化合物的盐,其盐,其溶剂合物或环糊精包合物,其具有由式(I)表示的8-氮杂前列腺素骨架(其中所有符号具有与说明书相同的含义) 或其前药,并且它们作为活性成分具有EP 4激动作用,因此被认为可用于预防和/或治疗免疫疾病,哮喘,神经元细胞死亡,关节炎,肺衰竭,肺纤维化 ,肺气肿,支气管炎,慢性阻塞性肺疾病,肝损伤,急性肝炎,肾炎,肾功能不全,高血压,心肌缺血,全身炎症反应综合征,败血症,血液综合征,巨噬细胞活化综合征,静脉炎,川崎病,烧伤,系统性 肉芽肿病,溃疡性结肠炎,克罗恩病,透析中的高细胞因子血症,多器官功能衰竭,休克和青光眼等。 此外,化合物还具有促进骨形成的作用,因此预期可用于预防和/或治疗与骨量丧失相关的疾病,例如原发性骨质疏松症,继发性骨质疏松症,癌症的骨转移, 高钙血症,佩吉特氏病,骨丢失,骨坏死,骨手术后的骨形成,骨移植的替代治疗。

    8-azaprostaglandin derivatives and medical use thereof
    5.
    发明授权
    8-azaprostaglandin derivatives and medical use thereof 失效
    8-氮杂普罗兰前列腺素衍生物及其医疗用途

    公开(公告)号:US07256211B1

    公开(公告)日:2007-08-14

    申请号:US10542724

    申请日:2004-01-20

    CPC分类号: C07D417/12 C07D417/14

    摘要: The pharmaceutical composition comprising the compound of the invention having 8-azaprostaglandin skeleton represented by formula (I) (wherein, all the symbols have the same meanings as that of the specification) a salt thereof, a solvate thereof or a cyclodextrin clathrate thereof, or a prodrug thereof and them as active ingredient have EP4 agonistic action and thus are considered useful for the prevention and/or treatment of immunological diseases, asthma, neuronal cell death, arthritis, lung failure, pulmonary fibrosis, pulmonary emphysema, bronchitis, chronic obstructive pulmonary disease, liver damage, acute hepatitis, nephritis, renal insufficiency, hypertension, myocardial ischemia, systemic inflammatory response syndrome, sepsis, hemophagous syndrome, macrophage activation syndrome, Still's disease, Kawasaki disease, burn, systemic granulomatosis, ulcerative colitis, Crohn's disease, hypercytokinemia at dialysis, multiple organ failure, shock and glaucoma, etc. Furthermore, the compounds also have an action of accelerating bone formation, so it is expected to be useful for the prevention and/or treatment of diseases associated with loss in bone mass, for example, primary osteoporosis, secondary osteoporosis, bone metastasis of cancer, hypercalcemia, Paget's disease, bone loss, osteonecrosis, bone formation after bone operation, alternative treatment for bone grafting.

    摘要翻译: 该药物组合物包含本发明化合物,其具有式(I)表示的8-氮杂前列腺素骨架(其中所有符号具有与说明书相同的含义)其盐,其溶剂合物或环糊精包合物,或 其前药和它们作为活性成分具有EP 4激动作用,因此被认为可用于预防和/或治疗免疫疾病,哮喘,神经元细胞死亡,关节炎,肺衰竭,肺纤维化, 肺气肿,支气管炎,慢性阻塞性肺疾病,肝损伤,急性肝炎,肾炎,肾功能不全,高血压,心肌缺血,全身炎症反应综合征,败血症,血液综合征,巨噬细胞活化综合征,Still氏病,川崎病,烧伤,全身性肉芽肿病 ,溃疡性结肠炎,克罗恩病,透析中的高细胞因子血症,多器官功能衰竭,休克和青光眼等。 该化合物还具有加速骨形成的作用,因此预期可用于预防和/或治疗与骨质量损失相关的疾病,例如原发性骨质疏松症,继发性骨质疏松症,癌症的骨转移, 高钙血症,佩吉特氏病,骨丢失,骨坏死,骨手术后的骨形成,骨移植的替代治疗。

    Pharmaceutical composition for treatment of diseases associated with decrease in bone mass comprising EP4 agonist as the active ingredient
    7.
    发明授权
    Pharmaceutical composition for treatment of diseases associated with decrease in bone mass comprising EP4 agonist as the active ingredient 失效
    用于治疗与包含EP4激动剂作为活性成分的骨量减少相关的疾病的药物组合物

    公开(公告)号:US07608637B2

    公开(公告)日:2009-10-27

    申请号:US10484500

    申请日:2002-07-22

    IPC分类号: A61K31/40 A01N43/36

    摘要: A pharmaceutical composition for topical administration for prevention and/or treatment of diseases associated with decrease in bone mass comprising an EP4 agonist as an active ingredient. An EP4 agonist, in which includes a compound possessing prostaglandin skeleton as a representative, possesses promoting action on bone formation, so it is useful for prevention and/or treatment of diseases associated with decrease in bone mass (bone diseases such as primary osteoporosis, secondary osteoporosis, bone metastasis of cancer, hypercalcemia, Paget's disease, bone loss and bone necrosis, postoperative osteogenesis, alternative therapy for bone grafting).

    摘要翻译: 用于预防和/或治疗与包含EP4激动剂作为活性成分的骨量减少相关的疾病的局部施用的药物组合物。 包含具有前列腺素骨架的化合物作为代表的EP4激动剂具有促进骨形成的作用,因此可用于预防和/或治疗与骨质量减少有关的疾病(骨疾病如原发性骨质疏松症,继发性骨质疏松症 骨质疏松症,癌症的骨转移,高钙血症,佩吉特氏病,骨丢失和骨坏死,术后成骨,骨移植的替代疗法)。

    Precision trench formation through oxide region formation for a semiconductor device
    9.
    发明授权
    Precision trench formation through oxide region formation for a semiconductor device 有权
    通过半导体器件的氧化物区形成形成精密沟槽

    公开(公告)号:US07871896B2

    公开(公告)日:2011-01-18

    申请号:US12134087

    申请日:2008-06-05

    IPC分类号: H01L21/762

    摘要: Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.

    摘要翻译: 公开了用于精密沟槽形成的结构和方法。 在一个实施例中,一种制造半导体器件的方法包括通过对半导体衬底的一部分进行氧离子注入,在半导体衬底中形成第一含氧区域,并且通过使用其中包含的氧的第一含氧区域氧化 对所述半导体衬底进行热处理,其中所述第一含氧区域被转换为第一氧化物区域。 该方法还包括通过消除第一氧化物区域在半导体衬底中形成沟槽,其中执行热处理包括使第一含氧区域处于低于氧的气体。

    SONOS-NAND device having a storage region separated between cells
    10.
    发明授权
    SONOS-NAND device having a storage region separated between cells 有权
    具有在单元之间分离的存储区域的SONOS-NAND装置

    公开(公告)号:US07838406B2

    公开(公告)日:2010-11-23

    申请号:US12343998

    申请日:2008-12-24

    IPC分类号: H01L21/3205

    摘要: The present invention is a semiconductor device including a semiconductor substrate having a trench, a first insulating film provided on side surfaces of the trench, a second insulating film of a material different from the first insulating film provided to be embedded in the trench, a word line provided extending to intersect with the trench above the semiconductor substrate, a gate insulating film of a material different from the first insulating film separated in an extending direction of the word line by the trench and provided under a central area in a width direction of the word line, and a charge storage layer separated in the extending direction of the word line by the trench and provided under both ends in the width direction of the word line to enclose the gate insulating film, and a method for manufacturing the same.

    摘要翻译: 本发明是一种半导体器件,包括具有沟槽的半导体衬底,设置在沟槽的侧表面上的第一绝缘膜,与设置在沟槽中的第一绝缘膜不同的材料的第二绝缘膜, 线延伸以与半导体衬底上方的沟槽相交;栅极绝缘膜,其不同于第一绝缘膜的材料的栅极绝缘膜,该第一绝缘膜在字线的延伸方向上被沟槽分隔,并且设置在该字线的宽度方向上的中心区域的下方 字线和电荷存储层,并且在字线的宽度方向上的两端设置用于包围栅极绝缘膜的电荷存储层及其制造方法。