公开(公告)号：US20100151692A1

公开(公告)日：2010-06-17

申请号：US12634899

申请日：2009-12-10

申请人： Toshiaki ONO ,  Yumi HOSHINO

发明人： Toshiaki ONO ,  Yumi HOSHINO

IPC分类号： H01L21/3205

CPC分类号： H01L29/7848 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/3225 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7847

摘要： A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial layer deposited on the surface of the silicon substrate, includes an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial layer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×1017 to 12×1017 atoms/cm3 (ASTM F-121, 1979).

摘要翻译： 一种制造外延晶片的方法，包括具有从单晶硅切割的表面的硅衬底和沉积在硅衬底的表面上的硅外延层的硅衬底，包括氧浓度控制热处理工艺，其中， 在外延生长后，在非氧化性气氛下进行外延层，使得硅外延层的表面的氧浓度为1.0×10 17〜12×10 17原子/ cm 3（ASTM F-121,1979）。

公开(公告)号：US20100288184A1

公开(公告)日：2010-11-18

申请号：US12847928

申请日：2010-07-30

申请人： Toshiaki ONO ,  Shigeru Umeno ,  Wataru Sugimura ,  Masataka Hourai

发明人： Toshiaki ONO ,  Shigeru Umeno ,  Wataru Sugimura ,  Masataka Hourai

IPC分类号： C30B15/04 ,  H01L21/322

CPC分类号： C30B15/00 ,  C30B29/06 ,  H01L21/261

摘要： A method for manufacturing a silicon single crystal wafer for IGBT, including introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×1017 atoms/cm3 or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects. The silicon single crystal is irradiated with neutrons so as to dope with phosphorous; an n-type dopant is added to the silicon melt; or phosphorous is added to the silicon melt so the phosphorous concentration in the silicon single crystal is 2.9×1013 to 2.9×1015 atoms/cm3; a p-type dopant having a segregation coefficient smaller than that of the phosphorous is added to the silicon melt so the concentration in the single crystal is 1×1013 to 1×1015 atoms/cm3 corresponding to the segregation coefficient thereof.

摘要翻译： 一种制造用于IGBT的硅单晶晶片的方法，包括将氢原子的物质以氢气当量分压为40〜400Pa的气氛气体引入，生长间隙氧浓度为8.5× 在硅单晶拉拔速度下为1017原子/ cm3以下，能够拉拔不含生长缺陷的硅单晶。 将硅单晶用中子照射以掺杂磷; 将n型掺杂剂加入到硅熔体中; 或者将磷添加到硅熔体中，使得硅单晶中的磷浓度为2.9×1013〜2.9×1015原子/ cm3; 将具有小于磷的偏析系数的p型掺杂剂添加到硅熔体中，使得单晶中的浓度相应于其偏析系数为1×1013至1×1015原子/ cm3。

公开(公告)号：US20100127354A1

公开(公告)日：2010-05-27

申请号：US12625691

申请日：2009-11-25

申请人： Toshiaki ONO ,  Toshiyuki FUJIWARA ,  Masataka HOURAI ,  Wataru SUGIMURA

发明人： Toshiaki ONO ,  Toshiyuki FUJIWARA ,  Masataka HOURAI ,  Wataru SUGIMURA

IPC分类号： H01L29/12 ,  H01L21/20 ,  C30B15/14 ,  C01B33/02

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206

摘要： A method for growing a silicon single crystal having a hydrogen defect density of equal to or less than 0.003 pieces/cm2 using a Czochralski method, includes: a crystal growth step performed in an atmospheric gas containing a hydrogen-containing gas so as to allow hydrogen gas to have a partial pressure of equal to or higher than 40 Pa and equal to or lower than 400 Pa; and a cooling state control step of setting the amount of time in a hydrogen aggregation temperature range which is a range of equal to or lower than 850° C. and equal to or higher than 550° C. to be equal to or longer than 100 minutes and equal to or shorter than 480 minutes.

摘要翻译： 使用Czochralski法生长氢缺陷密度等于或小于0.003个/ cm 2的硅单晶的方法包括：在含有含氢气体的气氛气体中进行的晶体生长步骤，以使氢 气体具有等于或高于40Pa且等于或低于400Pa的分压; 以及冷却状态控制步骤，将在850℃以上且等于或高于550℃的范围内的氢聚集温度范围内的时间量设定为等于或大于100 分钟，等于或短于480分钟。

公开(公告)号：US20080292523A1

公开(公告)日：2008-11-27

申请号：US12113576

申请日：2008-05-01

申请人： Toshiaki ONO ,  Takayuki KIHARA

发明人： Toshiaki ONO ,  Takayuki KIHARA

IPC分类号： C01B33/02 ,  C30B15/00

CPC分类号： C30B29/06 ,  C30B15/206

摘要： A production method of a silicon single crystal wafer capable of effectively bringing out a gettering effect also in a thin film device is provided: wherein a thermal treatment with rapid heating up and down is performed for 10 seconds or shorter on a silicon single crystal wafer obtained by processing a single crystal grown by the Czochralski method and having an initial interstitial oxygen density is 1.4×1018 atoms/cc (ASTM F-121, 1979).

摘要翻译： 提供了一种能够在薄膜器件中有效地产生吸气效应的硅单晶晶片的制造方法：其中在获得的硅单晶晶片上进行10秒以上的快速升温的热处理10秒以下 通过处理通过切克劳斯基法生长并具有初始间隙氧密度的单晶为1.4×10 18原子/ cc（ASTM F-121,1979）。

公开(公告)号：US20080197457A1

公开(公告)日：2008-08-21

申请号：US12025261

申请日：2008-02-04

申请人： Toshiaki ONO ,  Masataka HOURAI

发明人： Toshiaki ONO ,  Masataka HOURAI

IPC分类号： H01L29/36 ,  H01L21/22

CPC分类号： H01L21/324 ,  H01L21/3221

摘要： A silicon wafer which achieves a gettering effect without occurrence of slip dislocations is provided, and the silicon wafer is subject to heat treatment after slicing from a silicon monocrystal ingot so that a layer which has zero light scattering defects according to the 90° light scattering method is formed in a region at a depth from the wafer surface of 25 μm or more but less than 100 μm, and a layer which has a light scattering defect density of 1×108/cm3 or more according to the 90° light scattering method is formed in a region at a depth of 100 μm from the wafer surface.

摘要翻译： 提供一种不发生滑移位错而实现吸气效果的硅晶片，并且从硅单晶锭切片后对硅晶片进行热处理，使得根据90°光散射法具有零光散射缺陷的层 形成在距离晶片表面的深度为25μm或更大但小于100μm的区域中，并且具有1×10 8 / cm 3的光散射缺陷密度的层， 在距离晶片表面100μm的深度的区域形成90°光散射法。

公开(公告)号：US20090305518A1

公开(公告)日：2009-12-10

申请号：US12541661

申请日：2009-08-14

申请人： Toshiaki ONO ,  Masataka HOURAI

发明人： Toshiaki ONO ,  Masataka HOURAI

IPC分类号： H01L21/26

CPC分类号： H01L21/26506 ,  H01L21/26533 ,  H01L21/3226

摘要： An SOI wafer which does not generate slip dislocation even if laser annealing is performed for no more than 0.1 seconds at a maximum temperature of 1200° C. or more is provided.This wafer is an SOI wafer used for a process of manufacturing a semiconductor device, in which laser annealing is conducted for no more than 0.1 seconds at a maximum temperature of 1200° C. or more, which includes an active layer, a support layer of a monocrystalline silicon, and an insulated oxide film layer between the active layer and the support layer, wherein light-scattering defect density measured by a 90° light scattering method at the depth region of 260 μm toward the support layer side from an interface between the insulated oxide film layer and the support layer is 2×108/cm3 or less.

摘要翻译： 即使在1200℃以上的最高温度下进行激光退火不超过0.1秒，也不产生滑移位错的SOI晶片。 该晶片是用于制造半导体器件的工艺的SOI晶片，其中激光退火在1200℃以上的最高温度下进行不超过0.1秒，其包括有源层，支撑层 单晶硅和有源层与支撑层之间的绝缘氧化膜层，其中通过90°光散射法在260μm的深度区域从支撑层侧的界面向支撑层侧测量的光散射缺陷密度 绝缘氧化膜层和支撑层为2×10 8 / cm 3以下。

公开(公告)号：US20090302432A1

公开(公告)日：2009-12-10

申请号：US12477207

申请日：2009-06-03

申请人： Toshiaki ONO

发明人： Toshiaki ONO

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/04

摘要： A silicon epitaxial wafer obtained by growing a silicon epitaxial layer on a surface of a silicon wafer having a diameter of at least 300 mm produced by slicing a silicon single crystal ingot doped with boron and germanium grown by the Czochralski method, wherein boron is doped to be at a concentration of 8.5×1018 (atoms/cm3) or higher and germanium is doped to satisfy a relational expression (formula 1) below.  3 × ( 4.64 × 10 - 24 · [ Ge ] - 2.69 × 10 - 23 · [ B ] ) 5.43 × r 2 × t epi ( t sub ) 2  ≤ 26 [ Forrmula   1 ]

摘要翻译： 通过在直径为至少300mm的硅晶片的表面上生长硅外延晶片而获得的硅外延晶片，其通过切割通过切克劳斯基法生长的掺杂有硼的锗单晶锭和锗，其中硼被掺杂 浓度为8.5×1018（原子/ cm3）或更高，锗掺杂以满足下面的关系式（式1）。 3 x（4.64 x 10 - 24。[Ge] - 2.69 x 10 - 23。[B]）5.43 x r 2 x t epi（t sub）2 ert 26 [Forrmula aheld 1]

公开(公告)号：US20080233717A1

公开(公告)日：2008-09-25

申请号：US12035588

申请日：2008-02-22

申请人： Toshiaki ONO ,  Masataka HOURAI

发明人： Toshiaki ONO ,  Masataka HOURAI

IPC分类号： H01L21/20 ,  B32B9/00

CPC分类号： H01L21/26506 ,  H01L21/26533 ,  H01L21/3226

摘要： An SOI wafer which does not generate slip dislocation even if laser annealing is performed for no more than 0.1 seconds at a maximum temperature of 1200° C. or more is provided.This wafer is an SOI wafer used for a process of manufacturing a semiconductor device, in which laser annealing is conducted for no more than 0.1 seconds at a maximum temperature of 1200° C. or more, which includes an active layer, a support layer of a monocrystaline silicon, and an insulated oxide film layer between the active layer and the support layer, wherein light-scattering defect density measured by a 90° light scattering method at the depth region of 260 μm toward the support layer side from an interface between the insulated oxide film layer and the support layer is 2×108/cm3 or less.

摘要翻译： 即使在1200℃以上的最高温度下进行激光退火不超过0.1秒，也不产生滑移位错的SOI晶片。 该晶片是用于制造半导体器件的工艺的SOI晶片，其中激光退火在1200℃以上的最高温度下进行不超过0.1秒，其包括有源层，支撑层 单晶硅，以及在有源层和支撑层之间的绝缘氧化物膜层，其中通过90°光散射法在260μm的深度区域从支撑层侧的界面向支撑层侧测量的光散射缺陷密度 绝缘氧化膜层和支撑层为2×10 8 / cm 3以下。