公开(公告)号：US5205878A

公开(公告)日：1993-04-27

申请号：US808535

申请日：1991-12-16

申请人： Toshihiro Kanzaki ,  Akira Sugawara ,  Isamu Amatsu ,  Kouichi Hatakeyama

发明人： Toshihiro Kanzaki ,  Akira Sugawara ,  Isamu Amatsu ,  Kouichi Hatakeyama

IPC分类号： C22C9/00 ,  C22F1/08 ,  H01L21/00

CPC分类号： H01L21/67144 ,  C22C9/00 ,  C22F1/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2924/181

摘要： Electric and electronic parts, including leadframes made of a copper-based alloy having high strength and high electric conductivity said copper-based alloy is produced by a process which comprises the steps of preparing a copper-based alloy consisting essentially of 0.01-3.0 wt % Co and 0.01-0.5 wt % P with the balance being Cu and incidental impurities, quenching said alloy from a temperature not lower than 750.degree. C. down to 450.degree. C. and below at a cooling rate of at least 1.degree. C./sec, heat treating the quenched alloy at a temperature of 480.degree.-600.degree. C. for 30-600 minutes, cold working said alloy for a working ratio of 20-80%, further heat treating the alloy at a temperature of 440.degree.-470.degree. C. for 30-600 minutes, and subsequently performing cold working for a working ratio of at least 50% and heat treatment at 380.degree. C. and below. The electric and electronic parts preferably contain a plurality of conductive leads.

摘要翻译： 包括由具有高强度和高导电性的铜基合金制成的引线框的电气和电子部件通过包括以下步骤的方法制备铜基合金，所述方法包括以下步骤：制备基本上由0.01-3.0重量％ Co和0.01-0.5重量％P，余量为Cu和偶然杂质，将所述合金从不低于750℃的温度淬火至450℃以下，冷却速度至少为1℃/ 秒，在480〜-600℃的温度下对淬火合金进行热处理30-600分钟，冷加工合金的加工比为20-80％，在440℃的温度下进一步热处理合金， 470℃，30-600分钟，然后进行至少50％的加工率的冷加工，并在380℃以下进行热处理。 电气和电子部件优选地包含多个导电引线。

公开(公告)号：US5147469A

公开(公告)日：1992-09-15

申请号：US792248

申请日：1991-11-14

申请人： Toshihiro Kanzaki ,  Akira Sugawara ,  Isamu Amatsu ,  Kouichi Hatakeyama

发明人： Toshihiro Kanzaki ,  Akira Sugawara ,  Isamu Amatsu ,  Kouichi Hatakeyama

IPC分类号： C22C9/00 ,  C22C9/06 ,  C22F1/00 ,  C22F1/08 ,  H01L21/00 ,  H01L23/50

CPC分类号： H01L21/67144 ,  C22C9/00 ,  C22F1/08

摘要： Copper-based alloys suitable for use as materials in fabricating electric and electronic parts as typified by leadframes and having high strength and high electric conductivity can be produced by a process which comprises the steps of preparing a copper-based alloy consisting essentially of 0.01- 3.0 wt % Co and 0.01- 0.5 wt % P with the balance being Cu and incidental impurities, quenching said alloy from a temperature not lower than 750.degree. C. down to 450.degree. C. and below at a cooling rate of at least 1.degree. C./sec, heat treating the quenched alloy at a temperature of 480.degree.-600.degree. C. for 30-600 minutes, cold working said alloy for a working ratio of 20-80%, further heat treating the alloy at a temperature of 440.degree.-470.degree. C. for 30-600 minutes, and subsequently performing cold working for a working ratio of at least 50% and heat treatment at 380.degree. C. and below.

摘要翻译： 适合用作制造电子和电子部件的材料的铜基合金，以引线框架为代表，具有高强度和高导电性的方法可以通过包括以下步骤的方法制备：制备基本上由0.01-3.0组成的铜基合金 wt％Co和0.01-0.5wt％P，余量为Cu和偶然杂质，将所述合金从不低于750℃的温度淬火至450℃以下，冷却速度至少为1℃ ./sec，在480〜-600℃的温度下对淬火的合金进行热处理30-600分钟，冷加工所述合金的加工比为20-80％，在440℃的温度下进一步热处理合金 在-40〜600℃下进行30-600分钟，然后进行至少50％的加工率的冷加工和380℃以下的热处理。

公开(公告)号：US6132529A

公开(公告)日：2000-10-17

申请号：US827664

申请日：1997-04-10

申请人： Koichi Hatakeyama ,  Akira Sugawara ,  Toshihiro Kanzaki

发明人： Koichi Hatakeyama ,  Akira Sugawara ,  Toshihiro Kanzaki

IPC分类号： C22C9/00 ,  C22C9/06 ,  C22F1/00 ,  C22F1/08 ,  H01B1/02 ,  H01L23/495

CPC分类号： C22F1/08 ,  C22C9/00 ,  C22C9/06 ,  H01L23/49579 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14

摘要： A leadframe of a single frame structure for supporting leads on IC chips. The leadframe is made of a high-strength, high-electroconductivity copper alloy. The copper alloy is produced by preparing an ingot of a copper alloy of 0.05-0.40 wt. % Fe, 0.05-0.40 wt. % Ni, 0.01-0.30 wt. % P, and optionally a total of 0.03-0.50 wt. % of either Sn or Zn or both and a total of 0.05-0.50 wt. % of at least one element of Ag, Co, B, Mn, Cr, Si, Ti and Zr, with the balance being Cu and incidental impurities, heating the ingot to 800 to 950.degree. C. and hot working the ingot to a reduction ratio of 50% or more, quenching the hot worked material from 600.degree. C. or above down to 300.degree. C. or below at a cooling rate of at least 1.degree. C./seconds, heat treating the quenched material at 380 to 520.degree. C. for 60-600 minutes without cold working, and subsequently carrying out cold working and heat treating at 450.degree. C. or below, whereby an Fe--Ni--P system intermetallic compound is precipitated in the Cu matrix as uniform and fine grains not larger than 50 nm.

摘要翻译： 用于支持IC芯片上的引线的单个框架结构的引线框架。 引线框架由高强度，高导电性铜合金制成。 铜合金通过制备0.05-0.40重量％的铜合金锭， ％Fe，0.05-0.40重量％ ％Ni，0.01-0.30wt。 ％P，任选地总计为0.03-0.50wt。 Sn或Zn或两者的％，总共0.05-0.50wt。 Ag，Co，B，Mn，Cr，Si，Ti和Zr中的至少一种元素的％，余量为Cu和偶然杂质，将锭加热至800-950℃，并将锭热加工至还原 比例为50％以上，将热加工材料从600℃以上淬火至300℃以下，冷却速度为1℃/秒以上，将淬火后的材料在380〜520℃下进行热处理 ℃，60〜600分钟，不进行冷加工，随后在450℃以下进行冷加工和热处理，由此将Fe-Ni-P系金属间化合物在Cu基体中沉淀为均匀且细小的颗粒 不大于50nm。

公开(公告)号：US5814168A

公开(公告)日：1998-09-29

申请号：US662695

申请日：1996-06-13

申请人： Koichi Hatakeyama ,  Akira Sugawara ,  Toshihiro Kanzaki

发明人： Koichi Hatakeyama ,  Akira Sugawara ,  Toshihiro Kanzaki

IPC分类号： C22C9/00 ,  C22C9/06 ,  C22F1/00 ,  C22F1/08 ,  H01B1/02 ,  H01L23/495

CPC分类号： C22F1/08 ,  C22C9/00 ,  C22C9/06 ,  H01L23/49579 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14

摘要： High-strength, high-electroconductivity copper alloys are produced by preparing an ingot of a copper alloy containing 0.05-0.40 wt % Fe, 0.05-0.40 wt % Ni, 0.01-0.30 wt % P, and optionally a total of 0.03-0.50 wt % of either Sn or Zn or both and a total of 0.05-0.50 wt % of at least one element of Ag, B, Mn, Cr, Si, Ti or Zr, with the balance being Cu and incidental impurities, heating the ingot to 800.degree. to 950.degree. C. and hot working it by a reduction ratio of 50% or more, quenching the hot worked material from 600.degree. C. or above to 300.degree. C. or below at a cooling rate of at least 1.degree. C./sec, heat treating the quenched material at 380.degree. to 520.degree. C. for 60 to 600 minutes without performing cold working, and cold working and heat treating it at 450.degree. C. or below, to precipitate an Fe--Ni--P system intermetallic compound in the Cu matrix as uniform and fine grains not larger than 50 nanometers. The copper alloys thus produced are superior in hardness, tensile strength, electrical conductivity and amenability to bending. The copper alloys are useful for making electric and electronic components, such as leadframes.

摘要翻译： 通过制备含有0.05-0.40重量％Fe，0.05-0.40重量％Ni，0.01-0.30重量％P和任选总计0.03-0.50重量％的铜合金锭，制得高强度，高导电性铜合金 Sn或Zn或两者的％，以及总量为0.05-0.50重量％的Ag，B，Mn，Cr，Si，Ti或Zr中的至少一种元素，余量为Cu和偶然杂质，将锭加热至 800℃〜950℃，通过减压比50％以上进行热加工，将热加工材料从600℃以上淬火至300℃以下，冷却速度为1℃以上 ./sec，在380〜520℃下对骤冷材料进行热处理60〜600分钟，不进行冷加工，冷加工，在450℃以下进行热处理，析出Fe-Ni-P Cu基体中的系统金属间化合物为均匀且细晶粒不大于50纳米。 这样制造的铜合金的硬度，拉伸强度，导电性和弯曲性都优异。 铜合金可用于制造电子和电子部件，例如引线框架。

公开(公告)号：US06197134B1

公开(公告)日：2001-03-06

申请号：US09408384

申请日：1999-09-29

申请人： Toshihiro Kanzaki ,  Fumi Tanabe

发明人： Toshihiro Kanzaki ,  Fumi Tanabe

IPC分类号： C22F108

CPC分类号： B21B3/00 ,  B21B13/023 ,  B21B2003/005 ,  C22F1/08 ,  C23C14/3414

摘要： A process for producing a fcc metal consisting of copper having random orientations comprising cross rolling which is performed to achieve a total draft of at least 20% with the rolling axis being offset at 15° or more in each pass to a total offset of at least 90°, and subsequent full annealing which is accompanied by recrystallization, the fcc metal satisfying the following relationships: I(200)/I(111)≦2.3 and I(220)/I(111)≦1.0, where I(111), I(200) and I(220) are the integral intensities of the (111), (200) and (220) faces, respectively, of crystal faces as measured by X-ray diffractiometry.

摘要翻译： 一种由铜组成的具有随机取向的fcc金属的方法，该方法包括交叉滚轧，其在每次通过中使滚动轴在15°或更大偏移下达到至少20％的总吃水量，至少达到至少的总偏移量 90°，随后的完全退火伴随重结晶，fcc金属满足以下关系：I（200）/ I（111）<= 2.3和I（220）/ I（111）<= 1.0，其中I（ 111），I（200）和I（220）分别是通过X射线衍射法测量的晶面的（111），（200）和（220）面的积分强度。