Process facility having at least two physical units each having a reduced density of contaminating particles with respect to the surroundings
    3.
    发明授权
    Process facility having at least two physical units each having a reduced density of contaminating particles with respect to the surroundings 有权
    具有至少两个物理单元的处理设备各自相对于周围环境具有降低的污染颗粒密度

    公开(公告)号:US06797029B2

    公开(公告)日:2004-09-28

    申请号:US10330444

    申请日:2002-12-27

    IPC分类号: B01D4600

    摘要: In a process facility for producing semiconductor wafers, a third physical unit is configured between two physical units that produce mini environments. The third physical unit has a laminar flow at right angles to the laminar flows of the two physical units and is operated with a slightly higher flow velocity. According to the Bernoulli equation, the static pressure in the third physical unit is therefore lower than in the surrounding two physical units. Advantageously, therefore, no contamination from the more highly loaded one of the two physical units passes over into the lesser loaded one of the two physical units.

    摘要翻译: 在用于制造半导体晶片的处理设备中,第三物理单元被配置在产生迷你环境的两个物理单元之间。 第三物理单元具有与两个物理单元的层流成直角的层流,并且以略高的流速操作。 根据伯努利方程,第三物理单元中的静压力因此低于周围的两个物理单位。 因此,有利的是,来自两个物理单元中较高负载的物体的污染物不会传递到两个物理单元中的较小负载的物理单元中。