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公开(公告)号：US20050145170A1
公开(公告)日：2005-07-07
申请号：US11004897
申请日：2004-12-07
IPC分类号： C23C16/44 , C23C16/455 , H01L21/3065 , H01L21/31 , B08B3/00
CPC分类号： C23C16/4405 , C23C16/45565
摘要： A substrate processing apparatus has a pressure-reducible reaction chamber, a substrate support provided in the reaction chamber, a gas inlet port provided in a wall portion of the reaction chamber to introduce a gas into the reaction chamber, a first plate provided between the substrate support and the gas inlet port in the reaction chamber and having a plurality of first holes for dispersing the gas introduced from the gas inlet port into the reaction chamber, and a second plate provided between the substrate support and the first plate in the reaction chamber in opposing relation to the first plate and having a plurality of second holes for further dispersing the gas dispersed by the first plate. The first and second plates can be moved relatively to each other such that a spacing between the first and second plates is variable.
摘要翻译： 基板处理装置具有减压反应室，设置在反应室中的基板支撑体，设置在反应室壁部的气体导入口，将气体导入反应室，设置在基板之间的第一板 支撑件和气体入口，并且具有多个用于将从气体入口引入的气体分散到反应室中的第一孔，以及设置在反应室中的基板支撑件和第一板之间的第二板 与第一板相对，并且具有多个用于进一步分散由第一板分散的气体的第二孔。 第一和第二板可以相对移动，使得第一和第二板之间的间隔是可变的。
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公开(公告)号：US20080283086A1
公开(公告)日：2008-11-20
申请号：US11898697
申请日：2007-09-14
CPC分类号： C23C16/4405 , C23C16/45565
摘要： A substrate processing apparatus has a pressure-reducible reaction chamber, a substrate support provided in the reaction chamber, a gas inlet port provided in a wall portion of the reaction chamber to introduce a gas into the reaction chamber, a first plate provided between the substrate support and the gas inlet port in the reaction chamber and having a plurality of first holes for dispersing the gas introduced from the gas inlet port into the reaction chamber, and a second plate provided between the substrate support and the first plate in the reaction chamber in opposing relation to the first plate and having a plurality of second holes for further dispersing the gas dispersed by the first plate. The first and second plates can be moved relatively to each other such that a spacing between the first and second plates is variable.
摘要翻译： 基板处理装置具有减压反应室，设置在反应室中的基板支撑体，设置在反应室壁部的气体导入口，将气体导入反应室，设置在基板之间的第一板 支撑件和气体入口，并且具有多个用于将从气体入口引入的气体分散到反应室中的第一孔，以及设置在反应室中的基板支撑件和第一板之间的第二板 与第一板相对，并且具有多个用于进一步分散由第一板分散的气体的第二孔。 第一和第二板可以相对移动，使得第一和第二板之间的间隔是可变的。
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公开(公告)号：US07368398B2
公开(公告)日：2008-05-06
申请号：US11255015
申请日：2005-10-21
IPC分类号： H01L21/31
CPC分类号： C23C16/45565
摘要： A substrate processing apparatus includes a reaction chamber with a structure allowing pressure reduction, a shower head for supplying a processing gas into the reaction chamber including a gas diffusion plate in which through holes are formed, and a substrate support for placing a substrate. Each ones of through holes provided in a peripheral region of the gas diffusion plate is formed so that an area of an inlet thereof is larger than an area of an outlet thereof. With use of the substrate processing apparatus, a processing gas can be supplied uniformly in the gas diffusion plate. Therefore, substrate processing such as film deposition and film etching can be uniformly performed.
摘要翻译： 基板处理装置包括具有允许减压的结构的反应室，用于向反应室供应处理气体的喷头，包括形成有通孔的气体扩散板和用于放置基板的基板支撑件。 设置在气体扩散板的周边区域中的每个通孔形成为使得其入口的面积大于其出口的面积。 利用基板处理装置，能够在气体扩散板中均匀地供给处理气体。 因此，可以均匀地进行诸如膜沉积和膜蚀刻的基板处理。
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公开(公告)号：US20060086318A1
公开(公告)日：2006-04-27
申请号：US11253569
申请日：2005-10-20
CPC分类号： C23C16/45565
摘要： In a gas diffusion plate, a plurality of through holes for passing a processing gas used in processing a substrate are provided. Each one of the through holes provided in a peripheral region of the gas diffusion plate is formed so that an area of an inlet thereof is larger than an area of an outlet thereof. With use of a substrate processing apparatus including the gas diffusion plate, a processing gas can be supplied uniformly in the gas diffusion plate. Accordingly, substrate processing such as film deposition and film etching can be uniformly performed.
摘要翻译： 在气体扩散板中，设置用于使用于处理基板的处理气体通过的多个通孔。 设置在气体扩散板的周边区域的通孔中的每一个形成为使得其入口的面积大于其出口的面积。 通过使用包括气体扩散板的基板处理装置，能够在气体扩散板中均匀地供给处理气体。 因此，可以均匀地进行诸如膜沉积和膜蚀刻之类的衬底处理。
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公开(公告)号：US20060086463A1
公开(公告)日：2006-04-27
申请号：US11255015
申请日：2005-10-21
CPC分类号： C23C16/45565
摘要： A substrate processing apparatus includes a reaction chamber with a structure allowing pressure reduction, a shower head for supplying a processing gas into the reaction chamber including a gas diffusion plate in which through holes are formed, and a substrate support for placing a substrate. Each ones of through holes provided in a peripheral region of the gas diffusion plate is formed so that an area of an inlet thereof is larger than an area of an outlet thereof. With use of the substrate processing apparatus, a processing gas can be supplied uniformly in the gas diffusion plate. Therefore, substrate processing such as film deposition and film etching can be uniformly performed.
摘要翻译： 基板处理装置包括具有允许减压的结构的反应室，用于向反应室供应处理气体的喷头，包括形成有通孔的气体扩散板和用于放置基板的基板支撑件。 设置在气体扩散板的周边区域中的每个通孔形成为使得其入口的面积大于其出口的面积。 通过使用基板处理装置，能够在气体扩散板中均匀地供给处理气体。 因此，可以均匀地进行诸如膜沉积和膜蚀刻的基板处理。
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