摘要:
A charged particle beam device includes: a plurality of detecting units which detect charged particles diffracted by a specimen; and an intensity pattern information generating unit which generates, based on intensities of a plurality of detection signals output from the plurality of detecting units, intensity pattern information that represents the intensities of the plurality of detection signals as a pattern.
摘要:
An x-ray analysis apparatus comprises an electron beam assembly for generating a focused electron beam within a first gas pressure environment. A sample assembly is used for retaining a sample within a second gas pressure environment such that the sample receives the electron beam from the electron beam assembly and such that the gas pressure in the second gas pressure environment is greater than the gas pressure within the first gas pressure environment. An x-ray detector is positioned so as to have at least one x-ray sensor element within the first gas pressure environment. The sensor element is mounted to a part of the electron beam assembly which is proximal to the sample assembly and further arranged in use to receive x-rays generated by the interaction between the electron beam and the sample.
摘要:
It is an object of the present invention to provide a back scattered electron detector suitable for implementing a method for determining beforehand in which region of a sample an X-ray detector can obtain an accurate X-ray detection image and perform an appropriate analysis. A Coax-BSE detector which is a back scattered electron detector includes a BSE element, a support member that supports the BSE element, and a fixing member to fix the support member to the X-ray detector, in which the fixing member fixes the support member by clamping a side portion on the distal end side which is an X-ray receiving side of a housing that covers the X-ray detector.
摘要:
A single column inductively coupled plasma source with user selectable configurations operates in ion-mode for FIB operations or electron mode for SEM operations. Equipped with an x-ray detector, energy dispersive x-ray spectroscopy analysis is possible. A user can selectively configure the ICP to prepare a sample in the ion-mode or FIB mode then essentially flip a switch selecting electron-mode or SEM mode and analyze the sample using EDS or other types of analysis.
摘要:
The position of the sample is measured and used to correct for any off-axis motion during tomography using x-ray projection microscope system with a rotation stage system. The position is sensed using a precision-machined, low-CTE gold-coated cylinder or disc and three to five capacitive distance sensors. The correction can then be performed purely as image processing in software, by applying an appropriate shift in X and Y of the captured x-ray projections. A calibration is often necessary for each system (gold disc plus sensors plus sample stage) to account for any machining errors of the gold disc or positioning errors of the capacitive sensors. This calibration should also be repeated whenever any maintenance is performed on the metrology setup.
摘要:
An electron microscope including a vacuum chamber for containing a specimen to be analyzed, an optics column, including an electron source and a final probe forming lens, for focusing electrons emitted from the electron source, a specimen stage positioned in the vacuum chamber under the probe forming lens for holding the specimen, and an x-ray detector positioned within the vacuum chamber. The x-ray detector includes an x-ray sensitive solid-state sensor and a mechanical support system for supporting and positioning the detector, including the sensor, within the vacuum chamber. The entirety of the mechanical support system is contained within the vacuum chamber. Multiple detectors of different types may be supported within the vacuum chamber on the mechanical support system. The mechanical support system may also include at least one thermoelectric cooler element for thermo-electrically cooling the x-ray sensors.
摘要:
An X-ray micoanalysis test system comprising a beam generator which induces X-rays to emanate from a semiconductor device containing film stacks. The charged particle beam will penetrate at least two layers of a film stack on a semiconductor device so that these layers may be tested. The X-rays will be detected using multiple X-ray detectors that detect X-ray photons having a specific energy level. The X-rays will then be used to analyze the characteristics of the semiconductor device. Each of the multiple X-ray detectors may be wavelength dispersive system (WDS) detectors. The present invention also provides a method for measuring film stack characteristics on a semiconductor device. The method for measuring includes directing an electron beam towards the semiconductor device so that the electron beam penetrates at least a conductive film layer and a liner layer, detecting the X-rays which are caused to emanate from the device with multiple X-ray detectors that detect X-ray photons having a specific energy level. The present invention also provides a method and a computer-readable medium which determines a film stack's properties using the data collected with the test system of the present invention. The method and computer-readable medium includes selecting a set of values which estimate the film stack characteristics, using the estimated values to generate predicted data by solving equations which model the film stack, and selecting a new set of estimated film stack characteristic values when the difference between the predicted data and the raw data is larger than a certain margin of error.
摘要:
In order to obtain suitable absorption of the radiation to be detected in the detector gas of a radiation detector, in particular an X-ray detector, the detector is constructed in such a way that the radiation enters the detector parallel to the counting wire, thus offering an absorption path having any desired length. According to the invention, a number of avalanche chambers 50 is arranged adjacent the absorption chamber 46, said avalanche chambers having a comparatively small cross-section. The avalanche chambers are provided with grids 54 in such a way that charge multiplication by the grid voltage can occur only in the avalanche chamber. Due to the comparatively small cross-section of the avalanche chambers, broadening of the current impulses to be detected is prevented. Moreover, the comparatively long absorption chamber offers good radiation absorption and the presence of several avalanche chambers enables a favourable detection rate.
摘要:
A pass-through shutter mechanism enables the semiconductor crystal of an energy dispersive x-ray detector to extend beyond the shutter mechanism for analysis, adjacent to the sample, achieving optimum solid angle collection efficiency. The shutter mechanism provides optimum protection of the semiconductor detector crystal from high energy x-ray or secondary electron events produced in the chambers of electron microscopes, microprobes, x-ray spectrometers, etc.
摘要:
A surface analysis method and an apparatus for carrying out the samein which the method involves the detection of fluorescence X-rays emitted from the surface of a sample in response to a finely focused electron beam irradiated thereto, whereby residues on the sample surface are analyzed qualitatively and quantitatively. An electron beam (1) is irradiated through a hole (9) at the center of an X-ray detector (8) into a fine hole (h) on the surface of a sample (2). In response, fluorescence X-rays are emitted from inside the fine hole (h) and are detected by an annular X-ray detector (8) having an energy analysis function near the axis of the electron beam (1) (preferably within 20 degrees with respect to the center axis of the electron beam). This arrangement allows the fluorescence X-rays from the fine hole (h) to reach the X-ray detector (8) without being absorbed by the substance of the material. That in turn ensures qualitative and quantitative analysis of high accuracy about residues in fine holes of large aspect ratios. Since the method is of non-destructive nature, the analyzed sample may be placed unscathed back into the fabrication process.