Photocurrent scanning system
    2.
    发明授权

    公开(公告)号:US11190132B2

    公开(公告)日:2021-11-30

    申请号:US16249308

    申请日:2019-01-16

    IPC分类号: H02S50/15 G01R13/34 G01R19/00

    摘要: A photocurrent scanning system comprises a laser generating device, a focusing device, a displacement adjustment device, a bias supply device, and a measuring device. The laser generating device is used to emit a laser. The focusing device is used to focus the laser to a surface of a sample. The displacement adjustment device is used to place the sample and adjust a position of the sample, to make the laser focused onto different parts of the surface of the sample. The bias supply device is used to supply a voltage to the sample. The measuring device is used to measure a photocurrent signal flowing through the sample.

    Method for obtaining metallic carbon nanotube

    公开(公告)号:US11479465B2

    公开(公告)日:2022-10-25

    申请号:US16910378

    申请日:2020-06-24

    摘要: A method for obtaining metallic carbon nanotubes is provided. An insulating substrate comprising hollow portions and non-hollow portions is provided. A plurality of electrodes is formed on a surface of the non-hollow portions. A plurality of carbon nanotubes is formed on a surface of the insulating substrate, and the carbon nanotubes stretch across the hollow portions. The insulating substrate, the plurality of electrodes and the carbon nanotubes are placed into a cavity, and the cavity is evacuated. A voltage is applied between any two electrodes, and photos of carbon nanotubes suspended between the two electrodes are taken. In the photo, darker ones are semiconducting carbon nanotubes, and brighter ones are metallic carbon nanotubes. Finally, the semiconducting carbon nanotubes are removed.

    Method for measuring secondary electron emission coefficient

    公开(公告)号:US11287392B2

    公开(公告)日:2022-03-29

    申请号:US16908982

    申请日:2020-06-23

    IPC分类号: G01N23/2251

    摘要: A method for measuring secondary electron emission coefficient comprising: providing a device including a first collecting plate and a second collecting plate, and measuring an injection current. Short-circuiting the first collecting plate and the second collecting plate; placing a sample and applying a 50 volt positive voltage between the sample and the first collecting plate, ISE is 0; measuring a current I1 between the sample and the first collecting plate, and ignoring IBG1; and according to formula I1=IBG1+Iothers+ISE, obtaining a current of other electrons. Applying a positive voltage between the first collecting plate and the sample; measuring a current I2 between the first collecting plate and the sample, and ignoring IBG2; and obtaining ISE formed by the secondary electrons according to formula I2=IBG2+Iothers+ISE. Obtaining the secondary electron emission coefficient according to formula δ = I SE I injection ⁢ ⁢ current .

    Device and method for detecting electron beam

    公开(公告)号:US11320547B1

    公开(公告)日:2022-05-03

    申请号:US17225696

    申请日:2021-04-08

    IPC分类号: G01J1/42 G01T7/00

    摘要: An device for detecting electron beam comprises a porous carbon material layer, a Faraday cup and an image display. The porous carbon material layer comprises a plurality of carbon material particles and a first through hole. A plurality of micro gaps exist between the plurality of carbon material particles. A cross-sectional area of the first through hole is less than or equal to a cross-sectional area of the electron beam. The Faraday cup is under the porous carbon material layer and comprises an opening. The opening and the first through hole penetrate with each other. The image display is electrically connected to the porous carbon material layer and configured to form an image with different colors according to charge generated in the porous carbon material layer. A method for detecting electron beam using the device for detecting electron beam is also provided.

    Method for obtaining semiconducting carbon nanotube

    公开(公告)号:US10974960B1

    公开(公告)日:2021-04-13

    申请号:US16910373

    申请日:2020-06-24

    IPC分类号: B82B3/00 H01L21/02 B01J21/18

    摘要: A method for obtaining semiconducting carbon nanotubes is provided. An insulating substrate comprising hollow portions and non-hollow portions is provided. A plurality of electrodes is formed on a surface of the non-hollow portions. A plurality of carbon nanotubes is formed on a surface of the insulating substrate, and the carbon nanotubes stretches across the hollow portions. The insulating substrate, the plurality of electrodes, and the carbon nanotubes are placed into a cavity, and the cavity is evacuated. A voltage is applied between any two electrodes, and photos of carbon nanotubes suspended between the two electrodes are taken. In the photo, darker ones are the semiconducting carbon nanotubes, and brighter ones are metallic carbon nanotubes. Finally, the metallic carbon nanotubes are removed.

    Device for measuring secondary electron emission coefficient

    公开(公告)号:US11307156B2

    公开(公告)日:2022-04-19

    申请号:US16908987

    申请日:2020-06-23

    IPC分类号: G01N23/2251

    摘要: A device for measuring a secondary electron emission coefficient comprises a scanning electron microscope, a first collecting plate, a second collecting plate, a first galvanometer, a second galvanometer, a voltmeter, and a Faraday cup. The scanning electron microscope comprises an electron emitter and a chamber. A sample is located between the first collecting plate and the second collecting plate. The first galvanometer is used to test a current intensity of electrons escaping from the sample and hitting the first collecting plate and the second collecting plate. A high-energy electron beam emitted by the electron emitter passes through the first collecting plate and the second collecting plate, and enters the Faraday cup. The second galvanometer is used to test a current intensity of electrons entering the Faraday cup.