摘要:
A solid-state imaging device includes: an imaging unit taking a subject image focused by an imaging optical system; a digital signal processing unit generating image data of the subject image taken by the imaging unit and luminance data thereof; an input/output unit inputting and outputting data; a focus evaluation value generating unit generating a focus evaluation value of the subject image based on the luminance data outputted from the digital signal processing unit and outputting the focus evaluation value from the input/output unit; and an imaging drive unit starting an imaging operation by the imaging unit when an imaging instruction signal is inputted from the input/output unit, and outputting an imaging-end timing signal from the input/output unit when the imaging operation is completed.
摘要:
A solid-state imaging device includes: an imaging unit taking a subject image focused by an imaging optical system; a digital signal processing unit generating image data of the subject image taken by the imaging unit and luminance data thereof; an input/output unit inputting and outputting data; a focus evaluation value generating unit generating a focus evaluation value of the subject image based on the luminance data outputted from the digital signal processing unit and outputting the focus evaluation value from the input/output unit; and an imaging drive unit starting an imaging operation by the imaging unit when an imaging instruction signal is inputted from the input/output unit, and outputting an imaging-end timing signal from the input/output unit when the imaging operation is completed.
摘要:
An image sensor includes a solid-state image pickup device, an optical system, and a flash. The solid-state image pickup device has an electronic shutter function of outputting accumulated signal charges at a timing corresponding to a shutter speed. The optical system collects incident light to an image pickup area of the solid-state image pickup device. The flash irradiates light to an object to be photographed by the solid-state image pickup device. The solid-state image pickup device includes a pulse generator circuit for generating one or more of an electronic shutter pulse for controlling an accumulation time of signal charges by using the electronic shutter function, an optical system movement pulse for controlling movement of the optical system, and a flash pulse for controlling an emission timing of the flash.
摘要:
An image sensor includes a solid-state image pickup device, an optical system, and a flash. The solid-state image pickup device has an electronic shutter function of outputting accumulated signal charges at a timing corresponding to a shutter speed. The optical system collects incident light to an image pickup area of the solid-state image pickup device. The flash irradiates light to an object to be photographed by the solid-state image pickup device. The solid-state image pickup device includes a pulse generator circuit for generating one or more of an electronic shutter pulse for controlling an accumulation time of signal charges by using the electronic shutter function, an optical system movement pulse for controlling movement of the optical system, and a flash pulse for controlling an emission timing of the flash.
摘要:
A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided.An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).
摘要:
A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided.An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).
摘要:
An image sensor is disclosed, which includes: a pixel unit having a plurality of pixels each outputting incident light as a pixel signal; an amplifier amplifying the pixel signal output from the pixel unit; and a defective pixel detection circuit performing a defective pixel detection on signals output from the amplifier, wherein the defective pixel detection circuit adjusts the detection accuracy of the defective pixel detection in accordance with an exposure condition of the pixel unit.
摘要:
A MOS type solid state imaging device having unit pixels, each having a photodiode a transfer transistor for transferring the signal of the photodiode to a floating node, an amplifier transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node. A gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).
摘要:
A MOS type solid state imaging device having unit pixels, each having a photodiode a transfer transistor for transferring the signal of the photodiode to a floating node, an amplifier transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node. A gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).
摘要:
A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided.An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).